SI2305CDS-T1-GE3 N-Channel MOSFET Power Transistor for High-Speed Switching Applications
|
SI2305CDS-T1-GE3 N-Channel MOSFET Power Transistor for High-Speed Switching Applications Product Features: • N-Channel MOSFET • 30V drain-source voltage • 0.005Ω maximum on-state resistance • 1.5A (Tc) continuous drain current • Surface mount package • ......
Shenzhen Sai Collie Technology Co., Ltd.
|
SI7121DN-T1-GE3 P-Channel MOSFET IC 30V 16A 52W 1.8mohm 10V
|
...: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 18 A Rds On - Drain-Source Resistance: ......
Wisdtech Technology Co.,Limited
|
SI2399DS Transistor SI2399DS-T1-GE3 P-Channel MOSFET Transistor 20V 6A SOT-23
|
Product Detail Series TrenchFET® Packaging Cut Tape (CT) Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 20V Current - Continuous Drain (Id) @ 25°C 6A (Tc) Drive Voltage (Max Rds On, Min Rds On) 2.5V, ......
Shenzhen Quanyuantong Electronics Co., Ltd.
|
SI4840BDY-T1-GE3 SMD SMT MOSFET Transistor IC Chip 9 MOhms
|
...: SMD/SMT Package / Case: SOIC-8 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 40 V Id - Continuous Drain Current: 19 A Rds On - Drain-Source Resistance: 9 ......
Walton Electronics Co., Ltd.
|
SIR412DP-T1-GE3 VISHAY Trans MOSFET N-CH 25V 20A 8-Pin PowerPAK SO T/R
|
|
Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Obsolete Automotive No PPAP No Product Category Power MOSFET Configuration Single Quad Drain Triple Source Channel Mode Enhancement Channel Type N Number of Elements per Chip 1 ......
Sunbeam Electronics (Hong Kong) Limited
|
SIA517DJ-T1-GE3 - VISHAY - N- and P-Channel 12-V (D-S) MOSFET - Email: sales009@eis-ic.com
|
...T1-GE3 - VISHAY - N- and P-Channel 12-V (D-S) MOSFET. Detailed Description of SIA517DJ-T1-GE3: EIS Part Number: EIS-SIA517DJ-T1-GE3 Manufacturer Part Number: SIA517DJ-T1-GE3 Manufacturer / Brand: VISHAY Brief Description: N- and P-Channel 12-V (D-S) MOSFET......
Excellent Integrated System LIMITED (EIS LIMITED)
|
SIA517DJ-T1-GE3 - VISHAY - N- and P-Channel 12-V (D-S) MOSFET - Email: sales009@eis-ic.com
|
|
...T1-GE3 - VISHAY - N- and P-Channel 12-V (D-S) MOSFET. Detailed Description of SIA517DJ-T1-GE3: EIS Part Number: EIS-SIA517DJ-T1-GE3 Manufacturer Part Number: SIA517DJ-T1-GE3 Manufacturer / Brand: VISHAY Brief Description: N- and P-Channel 12-V (D-S) MOSFET......
Excellent Integrated System LIMITED (EIS LIMITED)
|
SI2333DDS-T1-GE3 20V P-Channel MOSFET 4.1A Continuous Current 0.045Ω Rds(on) 1.8V Logic-Level Drive TO-236-3 SC-59 SOT-23-3 -55°C to +150°C AEC-Q101 Qualified
|
...T1-GE3 andnbsp; FEATURES andbull; TrenchFETandreg; Power MOSFET andbull; 100 % Rg Tested andbull; Material categorization: For definitions of compliance please see andnbsp; APPLICATIONS andbull; Smart Phones and Tablet PCs - Load Switch - Battery Switch andnbsp; Overview The Sl2333DDS-T1-GE3 is an advanced 20V P-channel MOSFET......
TOP Electronic Industry Co., Ltd.
|
SI1443EDH-T1-GE3 Field Effect Transistor Transistors FETs MOSFETs Single
|
SI1443EDH-T1-GE3 Specifications Part Status Active FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 4A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 1.5V @ 250......
KZ TECHNOLOGY (HONGKONG) LIMITED
|
30V Vds 20V Vgs PowerPAK SO-8 N Channel MOSFET SIRA04DP-T1-GE3
|
SIRA04DP-T1-GE3 ELECTRONIC INTEGRATED CIRCUITS THE PowerPAK PACKAGEThe PowerPAK package was developed around the SO-8package (figure 1). The PowerPAK SO-8 utilizes the samefootprint and the same pin-outs as the standard SO-8. Thisallows PowerPAK to be ......
Shenzhen Hongxinwei Technology Co., Ltd
|
Submit your “si3454cdv t1 ge3 p channel mosfet” inquiry in a minute :