High Temperature Tolerances Sic Power Mosfet TO-220AC For Power Supply Units
|
...MOSFET For Power Supply Units Product Description: The Lingxun SiC MOSFET is perfect for power inverters, electric vehicles, grid infrastructure, industrial drives, consumer electronics, telecommunications equipment, and battery chargers. It is designed to handle high energy demands, making it a great choice for industries that need to deliver high power......
Guangdong Lingxun Microelectronics Co., Ltd
|
Integrated Circuit Chip SCT4045DRHRC15 Automotive Grade N-channel SiC Power MOSFET
|
... Grade N-channel SiC Power MOSFET Product Description Of SCT4045DRHRC15 SCT4045DRHRC15 is Automotive Grade N-channel SiC power MOSFET Transistors. Specification Of SCT4045DRHRC15 Part Number: SCT4045DRHRC15 Technology: SiC Mounting Style: Through......
ShenZhen Mingjiada Electronics Co.,Ltd.
|
Stable Converter SiC Power Mosfet , ISO Silicon Carbide SiC Power Semiconductors
|
...MOSFETs (SiC Metal-Oxide-Semiconductor Field-Effect Transistor) are high-power and high-efficiency devices with a high frequency and low resistance. They are based on the national military standard production line, making the process stable and reliable. Silicon Carbide MOSFETs are composed of a Silicon Carbide and Metal Oxide Semiconductor Field Effect Transistor. They are designed to handle high power...
Reasunos Semiconductor Technology Co., Ltd.
|
NTH4L020N090SC1 SIC Power MOSFET 900V TO247-4L 20MOHM
|
...
Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
|
IRFB4019PBF Power Mosfet High Performance Reliable Power Switches
|
...MOSFET Power Electronics Product Description: The IRFB4019PBF is a high-performance, silicon-based MOSFET power electronics device from International Rectifier. It is a voltage-controlled insulated-gate bipolar transistor (IGBT) that is designed to provide superior performance in power supply and other power conversion applications. This device is available in a TO-220AC......
Shenzhen Sai Collie Technology Co., Ltd.
|
4H-N 4 Inch Silicon Nitride SiC Substrate Dummy Grade SiC Substrate For High Power Devices
|
...Carbide substrates for semiconductor, Silicon Carbide substrates for semconductor ,sic single crystal wafers ,sic ingots for gem Application areas 1 high frequency and high power electronic devices Schottky diodes, JFET, BJT, PiN, diodes, IGBT, MOSFET 2...
SHANGHAI FAMOUS TRADE CO.,LTD
|
750319331 Auxiliary Gate Drive Transformer EP7 Package For SiC-MOSFET / IGBT
|
... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range input voltages 6 V to...
SHAREWAY TECHNOLOGY CO., LTD.
|
4H-SiC Epitaxial Wafers for Ultra-High Voltage MOSFETs (100–500 μm, 6 inch)
|
Product Overview of 4H-SiC epitaxial wafers The rapid development of electric vehicles, smart grids, renewable energy, and high-power industrial systems is driving demand for semiconductor devices that can handle higher voltages, greater power densities......
SHANGHAI FAMOUS TRADE CO.,LTD
|
Black Silicon Carbide As Refractory In Ceramic Production Sic
|
...Sic Description: Why can silicon carbide withstand such high voltages? Power devices, especially MOSFETs, must be able to handle extremely high voltages. SiC can achieve very high breakdown voltages, from 600V to several thousand volts, due to the dielectric breakdown strength of the electric field being about ten times higher than that of silicon. SiC......
Zhenan Metallurgy Co., Ltd
|
QPD1016 RF Mosfet 55V 1A 1.7GHz 23.9dB 500W NI-780 RF Transistors
|
QPD1016 RF JFET Transistors DC-1.7 GHz 500W 50V GaN RF Tr Manufacturer: Qorvo Product Category: RF JFET Transistors RoHS: Details Transistor Type: HEMT Technology: GaN SiC Operating Frequency: DC to 1.7 GHz Gain: 23.9 dB Transistor Polarity: N-Channel Vds......
Wisdtech Technology Co.,Limited
|
Submit your “sic power mosfet to 220ac” inquiry in a minute :