Single Diodes MSC030SDA330B 30A SiC SBD SIC Integrated Circuit Chip TO-247-2 SiC Schottky
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...SiC SBD SIC Integrated Circuit Chip TO-247-2 SiC Schottky Product Description Of MSC030SDA330B MSC030SDA330B The silicon carbide (SiC) power Schottky barrier diode (SBD) , the performance over silicon diode solutions while lowering the total cost of ownership for high-voltage applications. MSC030SDA330B device is a 3300 V, 30 A SiC SBD......
ShenZhen Mingjiada Electronics Co.,Ltd.
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6inch Dia 150mm 350um Thickness 4H N Type SiC Substrate For SBD MOS Application
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... substrate Production Grade 2inch Silicon Carbide Wafers 6H or 4H N-type or Semi-Insulating SiC Substrates 4H-N Type / Semi Insulating SiC Substrates 2inch 3inch 6inch Silicon Carbide Wafers what is SiC subatrate A SiC substrate refers to a wafer made of...
SHANGHAI FAMOUS TRADE CO.,LTD
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650V Schottky Barrier Rectifier Diode SBD Anti Surge Heatproof High Power
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...SBD (SiC SBD) is a power discrete device, a kind of SBD rectifier diode, designed for high frequency and high temperature applications. It is distinctively characterized by its extremely low reverse recovery current and strong anti-surge current ability. Silicon Carbide SBD......
Reasunos Semiconductor Technology Co., Ltd.
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SiC wafer SiC Epitaxial wafer 4H-N HPSI 6H-N 6H-P 3C-N for MOS or SBD
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SiC Substrate & Epi-wafer Product Portfolio Brief We offer a comprehensive portfolio of high-quality silicon carbide (SiC) substrates and wafers, covering multiple polytypes and doping types (including 4H-N type [N-type conductive], 4H-P type [P-type ......
SHANGHAI FAMOUS TRADE CO.,LTD
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