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Sic Wafer For Uhv Mos Device

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sic wafer for uhv mos device

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4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device

SiC Epi Wafer Overview 4H 6inch SiC Epitaxial Wafer 100μm/200μm/300μm for Ultra-High Voltage (UHV) MOS Device The 4H-SiC epitaxial wafer is a core material for carbon disulfide (SiC) power devices, fabricated on a 4H-SiC single-crystal substrate via chemical vapor deposition (CVD). Its unique crystal structure and electrical characteristics make it an ideal substrate for ultra-high voltage (UHV......

SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

SIC Silicon Carbide Wafer 4H - N Type For MOS Device 2inch Dia50.6mm

2inch 4/6inch dia50.6mm sic seed wafer 1mm thickness for ingot growth Customzied size/2inch/3inch/4inch/6inch 6H-N/4H-SEMI/ 4H-N SIC ingots/High purity 4H-N 4inch 6inch dia 150mm silicon carbide single crystal (sic) substrates wafersS/ Customzied as-cut ......

SHANGHAI FAMOUS TRADE CO.,LTD

Address: Room.1-1805,No.1079 Dianshanhu Road,Qingpu Area Shanghai city, China /201799

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