Industrial Silicon Carbide Power Transistors High Frequency Multipurpose
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...Silicon Carbide MOSFETs, also known as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) based on Silicon Carbide, are high-power, high-efficiency electronic components used in a wide variety of applications, including Solar Inverters, High-voltage DC/DC Converters, Motor Drivers, UPS Power Supplies, Switching Power Supplies, and Charging Piles. Featuring an N-type silicon carbide......
Reasunos Semiconductor Technology Co., Ltd.
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Industrial Silicon Carbide MOSFET Multipurpose High Frequency Transistor
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Industrial Silicon Carbide MOSFET Multipurpose High Frequency Transistor *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: ......
Guangdong Lingxun Microelectronics Co., Ltd
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
Anterwell Technology Ltd.
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet
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BD135 Silicon NPN Power Transistors high voltage power mosfet dual power mosfet This series of plastic, medium−power silicon NPN transistors are designed for use as audio amplifiers and drivers utilizing complementary or quasi complementary circuits. ......
ChongMing Group (HK) Int'l Co., Ltd
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ADL5602ARKZ-R7 RF Power Transistor High-Frequency And High-Power Output
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Product Listing: ADL5602ARKZ-R7 RF Power Transistor Features: • High Output Power: >35 dBm • High Efficiency: >50% • Wide Bandwidth: 5.5 to 6.5 GHz • Low Cost • Low-Noise • Low-Intermod Performance • RoHS Compliant Applications: • WiMAX • WLAN • Point-to-......
Shenzhen Sai Collie Technology Co., Ltd.
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11A Mosfet Power Transistor , High Power Transistor High Frequency Switching
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60V N-Channel AlphaSGT HXY4266 Product Summary VDSS= V ID= 3.6 A 30 z RDS(on) < mΩ@VGS = 10 V 65 z RDS(on) < mΩ@VGS = 4.5V 78 FEATURE TrenchFET Power MOSFET Applications Load Switch for Portable Devices z DC/DC Converter Maximum ratings (at TA=25℃ unless......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Semi-Insulating Silicon Carbide (Sic) Substrate High-Purity For Ar Glasses
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High-purity semi-insulating silicon carbide (SiC) substrates are specialized materials made from silicon carbide, widely used in the manufacturing of power electronics, radio frequency (RF) devices, and high-frequency, high-temperature semiconductor components. Silicon carbide, as a wide-bandgap semiconductor material, offers excellent electrical, thermal, and mechanical properties, making it highly suitable for applications in high-voltage, high...
SHANGHAI FAMOUS TRADE CO.,LTD
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RF Power Transistors MRW53601 NPN SILICON RF POWER TRANSISTOR MOTOROLA RF Power Transistors
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... specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS ......
Mega Source Elec.Limited
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Silicon Carbide Junction Transistor DF17MR12W1M1HFB68BPSA1 Automotive IGBT Modules
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..., 1200 V 45A (Tj) 20mW, Chassis Mount. Specification Of DF17MR12W1M1HFB68BPSA1 Part Number: DF17MR12W1M1HFB68BPSA1 Technology: SiC (Silicon Carbide Junction Transistor) Drain To Source Voltage (Vdss): 1200V Vgs(Th) (Max) @ Id: 5.15V @ 20mA Power -...
ShenZhen Mingjiada Electronics Co.,Ltd.
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2SC2987 Silicon NPN Power Transistors , 120W 20A High Power Transistor
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2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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