BF999 E6327 RF Silicon N Channel MOSFET Triode 200mW
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BF 999 E6327 RF MOSFET Transistors Silicon N-Channel MOSFET Triode 1.Silicon N-Channel MOSFET Triode For high-frequency stages up to 300 MHz preferably in FM applications • Pb-free (RoHS compliant) package1) 2.Why choose us? 100% ......
Shenzhen Hongxinwei Technology Co., Ltd
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IRFBE30PBF MOSFET Power Electronics 30V N-channel MOSFET Silicon Material
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IRFBE30PBF MOSFET Power Electronics 30V N-Channel MOSFET Silicon Material Product Description: The IRFBE30PBF is a high-performance N-channel MOSFET designed for maximum efficiency in a wide range of applications. It features a low on-state resistance......
Shenzhen Sai Collie Technology Co., Ltd.
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1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247
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...MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specification Of SCTWA50N120 Part Number: SCTWA50N120 FET Type: N-Channel Technology: SiCFET (Silicon......
ShenZhen Mingjiada Electronics Co.,Ltd.
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Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF
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...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs......
Anterwell Technology Ltd.
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N- Channel Mosfet Power Transistor 55V 110A 200W Through Hole TO-220AB IRF3205PBF
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...Channel MOSFET 55V 110A 200W Through Hole TO-220AB Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs......
Shenzhen Koben Electronics Co., Ltd.
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110A55V Silicon Low Power MOSFET TO-220AB Package For Digital Logic Circuits
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...Silicon Low Power MOSFET TO-220AB Package For Digital Logic Circuits Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. TYP MAX TYP MAX Typ Typ LX3205A1 TO-220AB 1 N 110 55 ±20 2 4 7.5 9 10 15 - - Product Description: One of the most notable attributes of this MOSFET......
Guangdong Lingxun Microelectronics Co., Ltd
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WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
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QM4803D N-Ch and P-Channel MOSFET Description The WSF6012 is the highest performance trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . The ......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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IRFS4227TRLPBF NPN PNP Transistors 200V 62A 70nC Qg N Channel Mosfet
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...Silicon Npn Power Transistors IRFS4227TRLPBF 200V 62A 26mOhm 70nC Qg N Channel Mosfet Applications • Hard switching PWM stages and resonant switching stages • Adapter,LCD&PDP TV, Lighting Description This HEXFET® Power MOSFET is specifically designed for Sustain, Energy Recovery & Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon......
Shenzhen Retechip Electronics Co., Ltd
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IRLML6401 N Channel Mosfet SOT23-3 IRLML6401TRPBF PD 1.3W
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...Channel MOSFET SOT23-3 IRLML6401TRPBF Products Description: MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R Transistor: P-MOSFET; unipolar; logic level; -12V; -4.3A; 1.3W These P-Channel MOSFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low on-resistance per silicon......
Shenzhen Res Electronics Limited
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650V Silicon Carbide Power Mosfet Multifunctional Durable N Channel
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Product Description: The Silicon Carbide Metal-Oxide-Semiconductor Field Effect Transistor (SiC MOSFET) is a high power, high frequency device that is based on the national military standard production line. Its material is silicon carbide, making it a ......
Reasunos Semiconductor Technology Co., Ltd.
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