Stable Converter SiC Power Mosfet , ISO Silicon Carbide SiC Power Semiconductors
|
|
...MOSFETs (SiC Metal-Oxide-Semiconductor Field-Effect Transistor) are high-power and high-efficiency devices with a high frequency and low resistance. They are based on the national military standard production line, making the process stable and reliable. Silicon Carbide MOSFETs are composed of a Silicon Carbide and Metal Oxide Semiconductor Field Effect Transistor. They are designed to handle high power...
Reasunos Semiconductor Technology Co., Ltd.
|
Integrated Circuit Chip SCT4045DRHRC15 Automotive Grade N-channel SiC Power MOSFET
|
... Grade N-channel SiC Power MOSFET Product Description Of SCT4045DRHRC15 SCT4045DRHRC15 is Automotive Grade N-channel SiC power MOSFET Transistors. Specification Of SCT4045DRHRC15 Part Number: SCT4045DRHRC15 Technology: SiC Mounting Style: Through......
ShenZhen Mingjiada Electronics Co.,Ltd.
|
NTH4L020N090SC1 SIC Power MOSFET 900V TO247-4L 20MOHM
|
...
Shenzhen Zhongkaixin Micro Electronics Co., Ltd.
|
NTF3055L108T1G Power Mosfet Transistor 3.0 A 60 V linear trench power mosfet
|
... Circuits Power MOSFET 3.0 A, 60 V, Logic Level, N−Channel SOT−223 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits STOCK LIST SN74LVC1G14DBVR 96000 TI 16+ SOT23-5...
Anterwell Technology Ltd.
|
F4N65L TO-220F-3L POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors
|
...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power...
Shenzhen Hunt Electronics Co., Ltd
|
FDI045N10A N Channel Power MOSFET 100V164A 4.5mΩ High Power
|
High Power MOSFET FDI045N10A N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ High Power MOSFET FDI045N10A N-Channel PowerTrench® MOSFET 100V, 164A, 4.5mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors ......
Sunbeam Electronics (Hong Kong) Limited
|
IRF7476TRPBF MOSFET Power Electronics HEXFET Power MOSFET
|
...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5...
Shenzhen Sai Collie Technology Co., Ltd.
|
IXFK27N80Q N Channel Mosfet Transistor 800V 27A 0.32 Rds Power MOSFETs HiPerFET
|
IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ......
Shenzhen Retechip Electronics Co., Ltd
|
Through Hole N Channel Power Mosfet 55V 49A 94W TO-220 ROHS IRFZ44NPBF IRFZ44N
|
...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs......
Shenzhen Koben Electronics Co., Ltd.
|
STP100N8F6 Audio Power Mosfet N Channel 80 V 0.008 Ohm Type 100 A StripFET F6
|
...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power...
Shenzhen Weitaixu Capacitor Co.,Ltd
|
