Power Discrete Devices Supper Junction MOSFET For LED Driver
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... dissipation. This means that your devices will run more efficiently, saving you energy and reducing the risk of overheating or other issues. In addition to its high performance, the Super Junction MOSFET also offers a large EMI margin,...
Guangdong Lingxun Microelectronics Co., Ltd
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Anti EMI Super Junction MOSFET Stable Ultra Fast Switching For PFC Circuit
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...Junction MOSFET is a power discrete device for LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, and New Energy Power Equipment. It is made by Multi-layer Epitaxy Process, which has excellent Anti EMI and Anti Surge Capabilities compared to Trench Process. It features an ultra-low Junction Capacitance and an ultra small package. Therefore, it is the ideal choice for SJ MOSFET......
Reasunos Semiconductor Technology Co., Ltd.
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PSF70060B Powercube Semi mosfet TO247 For Electric Vehicle Quick Charger Server
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... of high voltage Super Junction MOSFET with FRD 600V 70A 41mΩ Si Super junction MOSFET with Fast Recovery Diode Applications: Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-......
Angel Technology Electronics Co
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N-Channel MOSFET IMYH200R012M1H 2000V Silicon Carbide Junction Transistor TO-247-4
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..., Through Hole, package is TO-247-4. Specification Of IMYH200R012M1H Part Number IMYH200R012M1H FET Type N-Channel Technology SiC (Silicon Carbide Junction Transistor) Drain to Source Voltage (Vdss) 2000 V Current - Continuous Drain (Id) @ 25°C 123A (Tc)...
ShenZhen Mingjiada Electronics Co.,Ltd.
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HXY4409 30V P-Channel MOSFET
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... application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C....
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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IRF9321TRPBF High Performance MOSFET Power Electronics for Optimal Efficiency and Reliability
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...maximum drain current of 30A, a maximum gate-source voltage of ±20V, a maximum power dissipation of 1.7W, and a maximum junction temperature of 175°C. It is constructed with a P-channel MOSFET with a fast switching speed and low on-state resistance. This...
Shenzhen Sai Collie Technology Co., Ltd.
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Integrated Mosfet Power Transistor Chip SUD50P06-15L-E3 trench fet series
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...Mosfet Mounting Type: Surface Mount Package: TO-252 High Light: n channel mosfet transistor , n channel transistor SUD50P06-15L-E3 Integrated Circuit IC Chip MOSFET P-CH 60V 50A TO252 TrenchFET Series P-Channel 60 V (D-S), 175 °C MOSFET FEATURES 1, TrenchFET® Power MOSFET 2, 175 °C Junction...
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Superfet 3 Audio Power Transistors , 650V NVHL040N65S3F High Power Mosfet Transistors
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... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is...
Shenzhen Weitaixu Capacitor Co.,Ltd
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SUD25N06-45L Logic Level switching low Power Mosfet Transistor N - Channel 60-V (D-S) 175C
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...MOSFET, Logic Level switching power mosfet low power mosfet Parameter Symbol Limit Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Pulsed Drain Current IDM 30 A Continuous Source Current (Diode Conduction) IS 25 A Avalanche Current IAR 25 A Repetitive Avalanche Energy (Duty Cycle 1%) L = 0.1 mH EAR 31 mJ Operating Junction......
Anterwell Technology Ltd.
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SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS & Industrial Drives
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SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS & Industrial Drives Features New ......
TOP Electronic Industry Co., Ltd.
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