High Voltage Blocking Capability TO-247 IGBT 40A 1200V For Power Conversion
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40A 1200V TO-247 High Voltage Blocking Capability Power IGBT For Power Conversion And Control N-Channel Enhancement Mode Power IGBT LGT40N120B FEATURES • Positive temperature coefficient • High speed switching • Low collector to emitter saturation voltage......
Guangdong Lingxun Microelectronics Co., Ltd
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IKW40N120T2 Insulated Gate Bipolar Transistor IGBT 40A 1200V 480W For Converters
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... Product Category: IGBT Transistors Technology: Si Package / Case: TO-247-3 Collector- Emitter Voltage VCEO Max: 1.2 kV Collector-Emitter Saturation Voltage: 1.75 V Maximum Gate Emitter Voltage: - ......
Shenzhen Retechip Electronics Co., Ltd
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Automobile Chips AFGHL40T65SQD Field Stop Trench IGBT 40A Single IGBT Transistor
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Automobile Chips AFGHL40T65SQD Field Stop Trench IGBT 40A Single IGBT Transistor Product Description Of AFGHL40T65SQD AFGHL40T65SQD Field Stop Trench IGBT 40A Single IGBT Transistor, Maximum Junction Temperature is TJ = 175°C. Specification Of ......
ShenZhen Mingjiada Electronics Co.,Ltd.
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G40H65DFB New spot STGWA40H65DFB TO-247 IGBT single tube 40A/650V
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G-Resource Electronics Co.,Ltd
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IXGH40N60C2D1 HiPer FASTTM TO-247 40A 600V DIP Mosfet IGBT 300W
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IXGH40N60C2D1 # 75A 600V 300W DIP TO-247 HiPer FASTTM IGBTs w/ Diode Mosfet IGBT C2-Class High Speed IGBTs Features Very High Frequency IGBT Square RBSOA High Current Handling Capability Applications Uninterruptible Power Supplies (UPS) Switch-Mode and ......
ChongMing Group (HK) Int'l Co., Ltd
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IXGH40N60C2D1 HiPer FASTTM TO-247 40A 600V DIP Mosfet IGBT 300W
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IXGH40N60C2D1 # 75A 600V 300W DIP TO-247 HiPer FASTTM IGBTs w/ Diode Mosfet IGBT C2-Class High Speed IGBTs Features Very High Frequency IGBT Square RBSOA High Current Handling Capability Applications Uninterruptible Power Supplies (UPS) Switch-Mode and ......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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40N60 IGBT FGH40N60SFD FGH40N60 Transistor 40N60 Transistor IGBT 40N60 Original TO-247 Field Stop 600V 80A 290W
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...IGBT Type Field Stop Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 80A Current - Collector Pulsed (Icm) 120A Vce(on) (Max) @ Vge, Ic 2.9V @ 15V, 40A Power - Max 290W Switching Energy 1.1J (on), 310µJ (off) Input Type Standard Gate Charge 120nC Td (on/off) @ 25°C 25ns/115ns Test Condition 400V, 40A......
Shenzhen Quanyuantong Electronics Co., Ltd.
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Infineon IGBT Driver Low Loss DuoPack 600V 75A With Anti Parallel Diode In TO-247
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...IGBT Transistors IGBT Transistors LOW LOSS DuoPack 600V 75A,600 V IGBT with anti-parallel diode in TO-247 The 600 V, 75 A hard-switching TRENCHSTOP™ IGBT3 copacked with full-rated free-wheeling diode in a TO-247 package, leads to significant improvement of static as well as dynamic performance of the device, due to combination of trench-cell and fieldstop concept. The combination of IGBT......
Shenzhen Hongxinwei Technology Co., Ltd
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IRG4PH40UDPBF IGBT Power Module High Performance Reliable 800V 40A Low Loss
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... Technical Parameters: • Voltage: 1200V • Current Rating: 40A • Gate Drive Voltage: 5-15V • Power Dissipation: 80W • Operating Temperature: -40°C to 125°C • Storage Temperature: -40°C to 150°C • ......
Shenzhen Sai Collie Technology Co., Ltd.
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GA35XCP12-247
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... to the data sheet, such as PDF files Docx documents, etc. We have GA35XCP12-247 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ......
Rozee Electronics Co., Ltd
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