BTS282Z E3230 TO220-7 N-Channel MOSFET 49V 80A Transistors FETs
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...TO220-7 N-Channel MOSFET 49V 80A Transistors FETs BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -40 °C to 175 °C. This N channel MOSFET...
Angel Technology Electronics Co
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BTS282Z E3230 TO220-7 N Channel MOSFET 49V 80A Transistors FETs
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... parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -40 °C to 175 °C. This N...
Guangzhou Topfast Technology Co., Ltd.
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IPA50R190CE 5R190CE MOSFET N-Channel 500V 18.5A (Tc) 32W (Tc) Through Hole PG-TO220 IC Chip Original and New
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Product Description Product Detail Packaging Tube Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 18.5A (Tc) ......
Shenzhen Quanyuantong Electronics Co., Ltd.
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STL150N3LLH5 MOSFET N-channel 30 V PowerFLAT N P Channel Mosfet
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... Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 150 A Rds On - Drain-Source Resistance: 1.......
Wisdtech Technology Co.,Limited
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AO3407A MOSFET Power Electronics Transistors FETs MOSFETs P-Channel 30 V 4.3A 1.4W Surface Mount Package SOT-23-3
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AO3407A MOSFET Power Electronics Transistors FETs MOSFETs P-Channel 30 V 4.3A 1.4W Surface Mount Package SOT-23-3 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 4.3A (Ta) Drive......
Shenzhen Sai Collie Technology Co., Ltd.
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STP100N8F6 Audio Power Mosfet N Channel 80 V 0.008 Ohm Type 100 A StripFET F6
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...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET......
Shenzhen Weitaixu Capacitor Co.,Ltd
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High Power MOSFET PCFA86062 Power MOSFET, N-Channel, 100 V, 1.8 mΩ, Bare Die
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High Power MOSFET PCFA86062 Power MOSFET, N-Channel, 100 V, 1.8 mΩ, Bare Die [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ......
Sunbeam Electronics (Hong Kong) Limited
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STD2N105K5 MOSFET N-channel 1050 V, 6 Ohm typ 1.5 A MDmesh K5 Power MOSFET in DPAK package
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...: Details Technology: Si Mounting Style: SMD/SMT Package / Case: TO-252-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 1.05 kV Id - Continuous Drain Current: 1.5 A Rds On - Drain-Source Resistance: 6...
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Ultra Low On-Resistance HEXFET Power MOSFET P-Channel MOSFET SOT-23 Footprint Fast Switching IRLML6402TRPBF
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...MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs......
Anterwell Technology Ltd.
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FDS6699S Transistor MOS Tube MOSFET N CHannel Transistor SOIC-8
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... 6. 100% RG (gate resistance) tested Technological Parameters: Voltage Rating (DC) 30.0 V Current Rating 21.0 A Number of Channels 1...
Shenzhen Res Electronics Limited
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