1200V SiC MOSFET TO263-7 Package AIMBG120R080M1 For Automotive
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...MOSFET in TO263-7 package Description of AIMBG120R080M1 AIMBG120R080M1 is 1200V SiC Mosfet for Automotive family has been developed for current and future On-Board Charger and DC-DC applications in hybrid and electric vehicles. Specification Of AIMBG120R080M1 Product Status Active Technology SiC......
ShenZhen Mingjiada Electronics Co.,Ltd.
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IRF100S201 MOSFET Power Electronics PG-TO263-3 Package N-Channel Resonant mode power supplies
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IRF100S201 MOSFET Power Electronics PG-TO263-3 Package N-Channel Resonant mode power supplies FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 192A (Tc) Drive ......
Shenzhen Sai Collie Technology Co., Ltd.
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750319331 Auxiliary Gate Drive Transformer EP7 Package For SiC-MOSFET / IGBT
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... for 568 Vrms / 800 Vpk Operating temperature: -40 °C up to +130 °C Common control voltages for SiC MOSFET’s High Common-mode Transient Immunity (CMTI) Flyback, LLC, Half-Bridge topologies Up to 6 W output power Wide range ......
SHAREWAY TECHNOLOGY CO., LTD.
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Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS
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...MOSFET POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V 21A Package D2PAK MSL 1 SINGLE N-CHANNEL MOSFETS Product Technical Specifications Manufacturer Vishay Siliconix Series - Packaging......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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BTN7970B Integrated Circuit IC Chip Motor Driver 8V - 18V Power MOSFET Parallel PG - TO263-7
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...MOSFET Parallel PG-TO263-7 Motor Type - AC, DC Brushed DC Function Driver - Fully Integrated, Control and Power Stage Output Configuration Half Bridge Interface Parallel Technology Power MOSFET Step Resolution - Applications General Purpose Current - Output 70A Voltage - Supply 8 V ~ 18 V Voltage - Load 8 V ~ 18 V Operating Temperature -40°C ~ 150°C (TJ) Mounting Type Surface Mount Package......
Shenzhen Koben Electronics Co., Ltd.
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100v 180a Diode Electronic Component IPB180N10S402ATMA1 MOSFET N-CH TO263-7
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...) Digi-Reel® Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 180A (Tc) Drive ......
J&T ELECTRONICS LTD
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SPA04N60C3 npn darlington power transistor Power Mosfet Transistor Cool MOS™ Power Transistor
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SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOSô Power Transistor VDS @ Tjmax 650 V RDS(on) 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak ......
Anterwell Technology Ltd.
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SPA04N60C3XKSA1 npn darliCM GROUPon power transistor Power Mosfet Transistor Cool MOS™ Power Transistor
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SPP04N60C3, SPB04N60C3 Final data SPA04N60C3 Cool MOSô Power Transistor VDS @ Tjmax 650 V RDS(on) 0.95 Ω ID 4.5 A Feature • New revolutionary high voltage technology • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated • High peak ......
ChongMing Group (HK) Int'l Co., Ltd
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MC33GD3100EK Gate Drivers EV Inverter Control; IGBT & SiC GDIC
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... Type: Half-Bridge Mounting Style: SMD/SMT Package / Case: SOIC-32 Number of Drivers: 1 Driver Output Current: 15 A Supply Voltage - Max: 5 V Minimum Operating Temperature: - ......
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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CAS325M12HM2 Field Effect Transistor Transistors FETs MOSFETs Arrays
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CAS325M12HM2 Specifications Part Status Active FET Type 2 N-Channel (Half Bridge) FET Feature Silicon Carbide (SiC) Drain to Source Voltage (Vdss) 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C 444A (Tc) Rds On (Max) @ Id, Vgs 4.3 mOhm @ 400A, 20V ......
KZ TECHNOLOGY (HONGKONG) LIMITED
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