Manganese Copper Electric Resistant Wire Good Stability For Emitter Resistor
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...Emitter Resistor Product Description: Manganin alloy is one kind of electric resistance alloy which is mainly made of copper, manganese and nickel. It has character of small resistance temperature coefficient,low thermal EMF vs copper E,outstanding long-term stability,good weldability and workability,which makes it to be superior precision surveying instrument.such as resistor......
Shanghai Tankii Alloy Material Co.,Ltd
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A94 Silicon Power Transistor Emitter Base Voltage -5V For Mobile Power Supply
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...Transistors A94 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :A94 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -400 V VCEO Collector-Emitter Voltage -400 V VEBO Emitter......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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AOS Ic Transistor Capacitor Resistor AO4492 Electronic Components Parts AO449 Microcontroller N6002nz-s29-ay 4n60l-b-tm3-t
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ShenZhen QingFengYuan Technology Co.,Ltd.
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MMUN2233LT1G Pre Biased NPN Bipolar Transistor 50V 100 MA 246mW SOT-23-3
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...Transistor (BJT) NPN - Pre-Biased 50 V 100 mA 246 mW Surface Mount SOT-23-3 (TO-236) Category Discrete Semiconductor Products Transistors Bipolar (BJT) Single, Pre-Biased Bipolar Transistors Mfr onsemi Series - Product Status Active Transistor Type NPN - Pre-Biased Current - Collector (Ic) (Max) 100 mA Voltage - Collector Emitter Breakdown (Max) 50 V Resistor - Base (R1) 4.7 kOhms Resistor - Emitter......
Shenzhen Xinyuanpeng Technology Co., Ltd.
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New & Original Power Mosfet Transistor (−100V , −2A) 2SB1316
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...) Absolute maximum ratings (Ta = 25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO -100 V Collector-emitter voltage VCEO -100 V Emitter-base voltage VEBO -8 V Collector current IC -2 A...
Anterwell Technology Ltd.
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MMUN2214LT1G Bipolar junction Diode Transistor Pre Biased 100mA 50V BRT NPN IC
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...Transistors - Pre-Biased 100mA 50V BRT NPN IC PRODUCT DESCRIPTION Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN PRODUCT PROPERTIES Manufacturer: onsemi Product Category: Bipolar Transistors - Pre-Biased Configuration: Single Transistor Polarity: NPN Typical Input Resistor: 10 kOhms Typical Resistor Ratio: 0.21 Mounting Style: SMD/SMT Package / Case: SOT-23-3 DC Collector/Base Gain hfe Min: 80 Collector- Emitter......
Hong Kong Jia Li Xin Technology Limited
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UMC5N-7
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Pre-Biased Bipolar Transistor (BJT) 1 NPN, 1 PNP - Pre-Biased (Dual) 50V 100mA 250MHz 150mW Surface Mount SOT-353...
Beijing Silk Road Enterprise Management Services Co.,LTD
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BFG135 npn general purpose transistor Power Mosfet Transistor NPN 7GHz wideband transistor
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... NPN 7GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures, with integrated emitter-ballasting resistors, ensure high output ......
ChongMing Group (HK) Int'l Co., Ltd
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JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT RF Transistors
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...Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single Maximum DC Collector Current: 800 mA Collector- Emitter Voltage VCEO Max: 50 V Collector- Base Voltage VCBO: 75 V Emitter- Base Voltage VEBO: 6 V Collector-Emitter......
Wisdtech Technology Co.,Limited
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600V 60A 378W Solar Inverter IGBT Power Transistor FGH60N60SFDTU
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...IGBT Transistors Technology: Si Package / Case: TO-247AB-3 Configuration: Single Collector- Emitter Voltage VCEO Max: 600 V Collector-Emitter Saturation Voltage: 2.3 V Maximum Gate Emitter Voltage: - 20 V, + 20 V Continuous Collector Current at 25 C: 120 A...
Shenzhen Retechip Electronics Co., Ltd
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