PTFA211801E V4 R250
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...parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have PTFA211801E V4 R250 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our...
Rozee Electronics Co., Ltd
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PTFA180701F V4 R250
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... Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ......
Beijing Silk Road Enterprise Management Services Co.,LTD
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PTRA093302DC V1 R250 Field Effect Transistor Transistors FETs MOSFETs RF Chip
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...R250 Specifications Part Status Last Time Buy Transistor Type - Frequency - Gain - Voltage - Test - Current Rating - Noise Figure - Current - Test - Power - Output - Voltage - Rated - Package / Case - Supplier Device Package - Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. PTRA093302DC V1 R250......
KZ TECHNOLOGY (HONGKONG) LIMITED
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HMC442LC3BTR RF Power Transistor - Great For High Speed Applications
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... military, aerospace, and commercial. Features: - High gain, medium power GaN on SiC Heterojunction FET - 50 W CW output power - 10.2 dB gain - 28 V operation - High efficiency - High frequency operation - Low distortion - High linearity - Low ......
Shenzhen Sai Collie Technology Co., Ltd.
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RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet
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... High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION For output stage of high power amplifiers in VHF band mobile radio sets. RoHS COMPLIANT RD06HVF1-101 is a RoHS compliant products. RoHS compliance is ......
Anterwell Technology Ltd.
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RD06HVF1 RF Power Transistor 175MHz 6W Silicon Carbide Transistor For Amplifiers
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... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND ...
Shenzhen Koben Electronics Co., Ltd.
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Single High Voltage Mosfet Power Transistor DC SIHB22N60E-E3 ROHS
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... POWER TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor ......
Shenzhen Huahao Gaosheng Technology Co., Ltd
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RF Power Transistors MRF136 - Motorola, Inc - N-CHANNEL MOS BROADBAND RF POWER FETs
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Quick Detail: N-CHANNEL MOS BROADBAND RF POWER FETs Description: N-CHANNEL MOS BROADBAND RF POWER FETs designed for wideband large–signal amplifier and oscillator applications up to 400 MHz range, in either single ended or push–pull configuration. ......
Mega Source Elec.Limited
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Enhancement Mode N Channel Mosfet Power Transistor Low Voltage 100V
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...Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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PTFA091201E-V4-R250
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RF Mosfet 28 V 750 mA 960MHz 19dB 110W H-36248-2...
KANG DA ELECTRONICS CO.
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