NTR4003NT1G MOSFET Power Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications
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...MOSFET Power Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta) Drive Voltage (Max Rds On, Min Rds On) 2.5V, 4V Rds On (Max) @ Id, Vgs 1.5Ohm @ 10mA, 4V Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 1.15 nC @ 5 V Vgs......
Shenzhen Sai Collie Technology Co., Ltd.
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SPW47N60C MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3 NP Channel Mosfet
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...MOSFETs RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous Drain Current: 47 A Rds On - Drain-Source Resistance: 70 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 2.1 V Qg - Gate Charge......
Wisdtech Technology Co.,Limited
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SiC Trench MOSFET IMBF170R1K0M1 N-Channel MOSFETs Transistors TO-263-8 1700V
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...MOSFET IMBF170R1K0M1 N-Channel MOSFETs Transistors TO-263-8 1700V Product Description Of IMBF170R1K0M1 IMBF170R1K0M1 is CoolSiC™ 1700V SiC Trench MOSFET Silicon Carbide MOSFET Transistors, Enabling higher frequency. Specification Of IMBF170R1K0M1 Part Number IMBF170R1K0M1 Rds On (Max) @ Id, Vgs 1000mOhm @ 1A, 15V Vgs(th) (Max) @ Id 5.7V @ 1.1mA Gate Charge (Qg) (Max) @ Vgs 5 nC @ 12 V Vgs......
ShenZhen Mingjiada Electronics Co.,Ltd.
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SPD06N80C3 N-Channel MOSFET 800V 6A (Ta) 83W (Tc) Surface Mount PG-TO252-3
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... Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 900mOhm @ 3.8A, 10V Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs 41nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 785pF @ 100V FET Feature -...
Shenzhen Koben Electronics Co., Ltd.
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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...Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS......
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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8H02ETS Dual N Channel Mosfet Power Transistor 20V Low Gate Charge
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...Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS......
Beijing Silk Road Enterprise Management Services Co.,LTD
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IRFZ44N Mosfet Transistor IRFZ44N Transistor N-Channel Mosfet Power Transistor TO-220
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...Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V Vgs......
Shenzhen Quanyuantong Electronics Co., Ltd.
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SSS7N60B 600V N-Channel MOSFET power mosfet ic Field Effect Transistor
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...100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology....
Anterwell Technology Ltd.
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Through Hole High Power Transistor , AOTF14N50 N Channel Mosfet N-CH 500V 14A TO220F
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...MOSFET N-CH 500V 14A TO220F Category: Discrete Semiconductor Products>>FETs - Single Packaging:Tube FET Type:N-Channel Technology:MOSFET (Metal Oxide) Drain to Source Voltage (Vdss):500V Current - Continuous Drain (Id) / 25°C:14A (Tc) Drive Voltage (Max Rds On, Min Rds On):10V Rds On (Max) / Id, Vgs:380 mOhm / 7A, 10V Vgs(th) (Max) / Id:4.5V / 250µA Gate Charge (Qg) (Max) / Vgs:51nC / 10V Vgs......
DELI ELECTRONICS TECHNOLOGY CO.,LTD
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IRFB7434PBF N Channel Mosfet Ic 40 V 195A Tc 294W Tc Through Hole TO-220AB
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...Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-220AB Features: Category Single FETs, MOSFETs Mfr Infineon Technologies Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 195A (Tc) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V Vgs(th) (Max) @ Id 3.9V @ 250µA Gate Charge (Qg) (Max) @ Vgs......
Shenzhen Zhaocun Electronics Co., Ltd.
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