1 7v transistor bipolar igbt

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... is designed to support applications with high frequency up to 60KHz, and offers a current density of 400A/c㎡. High Power IGBT is an ideal choice for use in a wide range of applications requiring high speed switching and high power. Technical Parameters:

Brand Name:TOSHIBA

Model Number:GT20J301

Place of Origin:JAPAN

... Insulated Gate Bipolar Transistor Silicon N Channel IGBT HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS ●The 3rd Generation ●Enhancement-Mode ●High Speed. : tf=0.30pμs (Max.) ●Low Saturation Voltage : VCE (sat)=2.7V (Max.) ●FRD ...

Brand Name:KRUNTER

Model Number:KWP75H12E4-7M

Place of Origin:CHINA

... Gate Bipolar Transistor Assembly (IGBT), an Isolated Gate Thyristor Module, and an Insulated Gate Bipolar Transistor Element in a single package. This high-performance module is designed to provide efficient power switching capabilities in a wide range of

Brand Name:Bourns

Model Number:BIDW30N60T

...technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop technology to provide greater control of the dynamic characteristics, resulting in a

Brand Name:ON

Model Number:MMBT5551LT1G

Place of Origin:ON

... IGBT Power Module 600mA 160V BJT Bipolar Transistors MMBT5551LT1G SOT-23-3 Bipolar Transistors - BJT 600mA 160V NPN Manufacturer: onsemi Product Category: Bipolar Transistors - BJT RoHS: Details Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor ...

Brand Name:ST

Model Number:STGW80H65DFB

Place of Origin:Original

... Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: ...

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...

Model Number:PIMN31

Place of Origin:Malaysia

...IGBT Anti-Parallel Hyperfast Diode 43A 1200V Description : The HGTG11N120CND is a Non-Punch Through (NPT) IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT...

Brand Name:General Electric

Model Number:DS200IIBDG1AEA

Place of Origin:United States

... a status of the processing of the board. The LEDs are visible from the interior of the circuit board cabinet and are red in color when lit. The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A has several connectors and when you

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage...

Place of Origin:Japan

Brand Name:FUJITSU

Model Number:2DI30M-050

...BIPOLAR TRANSISTOR MODULES Rating and Specifications . Part NO: 2DI30M-050 Brand: FUJITSU Mounting Type: Screws Date Code: 04+ Quality Warranty: 3 Months 　 　 Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT...

Place of Origin:Original

Brand Name:Infineon Technologies

Model Number:IRG4PC30KDPBF

... IGBT Power Module Transistors IGBTs Single IRG4PC30KDPBF Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 28A Current - Collector Pulsed (Icm) 58A Vce(on) (Max) @ Vge, Ic 2.7V @ ...

Place of Origin:US

Brand Name:Original

Model Number:IHW20N120R3FKSA1

...) 1200V Current - Collector (Ic) (Max) 40A Current - Collector Pulsed (Icm) 60A Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 20A Power - Max 310W Switching Energy 950µJ (off) Input Type Standard Gate Charge 211nC Td (on

Brand Name:IDO

Model Number:automotive IGBT

Place of Origin:China

... Automotive Stamping Die For IGBT(Insulated Gate Bipolar Transistor) Progressive Die Description: Our Durable Progressive Automotive Stamping Die is optimized for modern IGBT (Insulated Gate Bipolar Transistor) manufacturing, delivering precision and ...

Brand Name:Anterwell

Model Number:GP4068D

Place of Origin:original factory

IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • Low Switching Losses • Maximum Junction temperature 175 °C ...

Brand Name:Original Factory

Model Number:IXBK64N250

Place of Origin:CN

Single IGBTs Transistors IXBK64N250 Integrated Circuit Chip TO-264-3 Transistors​ Product Description Of IXBK64N250 IXBK64N250 is 2500V, 75A, 735W High Voltage, High Gain BiMOSFET, Monolithic Bipolar MOS IGBTs Transistor. Specification Of IXBK64N250 Par...

Brand Name:Infineon Technologies

Model Number:IRG4PC40UDPBF

Place of Origin:original

IRG4PC40UDPBF IGBT Power Module High Quality High Efficiency Low Loss Operation IRG4PC40UDPBF IGBT Power Module The IRG4PC40UDPBF IGBT power module from Infineon is a high voltage (HV) insulated gate bipolar transistor (IGBT) module. It is designed for ...

Brand Name:Fanuc

Model Number:1MBI400NA-120

Place of Origin:Japan

New Module 1MBI400NA-120 FUJI Module Original IGBT Power Module Part Category: Transistors Manufacturer: Fuji Electric Corp. of America Description: Insulated Gate Bipolar Transistor, 400A I(C), 1200V V(BR)CES, N-Channe fuji a50l-0001-0327, a50l-0001-0327 ...

Brand Name:GY

Model Number:GYMD-160KW

Place of Origin:CHINA

... frequency induction melting furnace, its inverter component is a new type of IGBT module (insulated gate bipolar transistor, Germany production), it is mainly used for melting ordinary carbon steel, alloy steel, cast steel, non-ferrous metals. It has the

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

Place of Origin:N/S

IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ...