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All 1 channel nexfet power mosfet wholesalers & 1 channel nexfet power mosfet manufacturers come from members. We doesn't provide 1 channel nexfet power mosfet products or service, please contact them directly and verify their companies info carefully.
| Total 60 products from 1 channel nexfet power mosfet Manufactures & Suppliers |
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Brand Name:Ti Model Number:CSD17313Q2 ...Mosfet Power Transistor MOSFET 30V N Channel NexFET Power MOSFET 1 Features Optimized for 5-V Gate Drive Ultra-Low Qg and Qgd Low Thermal Resistance Pb-Free RoHS Compliant Halogen-Free SON 2-mm × 2-mm Plastic Package 2 Applications DC-DC Converters Battery and Load Management Applications 3 Description This 30-V, 24-mΩ, 2-mm x 2-mm SON NexFETTM power MOSFET is designed to minimize losses in power... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:TI Model Number:CSD19533Q5A Place of Origin:Original ... • Secondary Side Synchronous Rectifier • Motor Control DESCRIPTION This 100 V, 7.8 mΩ, SON 5 mm x 6 mm NexFET™ power MOSFET is designed to minimize losses in power conversion applications. Q5A Tape and Reel Information Notes: 1. 10-sprocket hole |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:TI Model Number:CSD18534Q5A Place of Origin:Philippines CSD18534Q5A Texas Instruments MOSFET 60V N Ch NexFET Pwr MOSFET 1. Features • Ultra-Low Qg and Qgd • Low Thermal Resistance VDS • Avalanche Rated • Logic Level • Pb Free Terminal Plating • RoHS Compliant • Halogen Free • SON 5 mm × 6 mm Plastic Package 2.... |
Shenzhen Hongxinwei Technology Co., Ltd
Guangdong |
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Place of Origin:China Brand Name:ONSEMI Model Number:RFD12N06RLESM High Power MOSFET RFD12N06RLESM N-Channel UltraFET® Power MOSFET 60V 17A 71mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in ... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:Infineon Model Number:BSC011N03LSATMA1 Place of Origin:original BSC011N03LSATMA1 MOSFET Power Electronics N-Channel OptiMOSTM Power-MOSFET 30V FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 37A (Ta), 100A (... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:HT Model Number:F16N65L TO-220F-3L Place of Origin:China ... power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in |
Shenzhen Hunt Electronics Co., Ltd
Guangdong |
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Brand Name:REASUNOS Place of Origin:Guangdong, CN ...h as Solar Inverter, High-voltage DC/DC Converter, Motor Driver, UPS Power Supply, Switching Power Supply and Charging Pile. This MOSFET is capable of handling high current and delivering maximum performance with its low on-resistance. It is also known as |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Place of Origin:PHILIPPINE Brand Name:Fuji Electric Model Number:FMH23N50E ...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ... |
Mega Source Elec.Limited
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Brand Name:Original Factory Model Number:IPD06P004N Place of Origin:CN ... package is PG-TO252-3(Surface Mount). Specification Of IPD06P004N Part Number IPD06P004N FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 16.4A (Tc) ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Model Number:IXFN39N90 Brand Name:Original Place of Origin:US ...Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 900V Current - Continuous Drain (Id) @ 25°C 39A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 220 mOhm @ 500mA, 10V Vgs(th) (Max) @ Id 5V @ 8mA Gate Charge (Qg) (Max) @ Vgs 390nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 9200pF @ 25V Power... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Brand Name:Texas Instruments Model Number:CSD17302Q5A Place of Origin:Malaysia ... CSD17311Q power MOSFET PMIC Applications: Notebook Point of Load Point-of-Load Synchronous Buck in Networking, Telecom and Computing Systems Description : The NexFET power MOSFET has been designed to minimize losses in power conversion applications... |
Angel Technology Electronics Co
Hongkong |
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Brand Name:ON Semiconductor Model Number:FDMC510P Place of Origin:CHINA ...Channel 20V POWER MOSFET 2.3W 41W Surface Mount 8-MLP General Description This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process that has been optimized for RDS(ON), switching performance and ruggedness. FET Type P-Channel Technology MOSFET... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:Texas Instruments Model Number:CSD17309Q3 Place of Origin:China CSD17309Q3 30V N-Channel NexFETandtrade; MOSFET with 3.6mandOmega; RDS(on) 40A Continuous Current 175anddeg;C Rating Ultra-Low Qg 3mmandtimes;3mm SON Package AEC-Q101 Qualified andamp; Pb-Free andnbsp; Featuresandnbsp; andbull; Optimizedfor5VGateDrive ... |
TOP Electronic Industry Co., Ltd.
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Brand Name:IXYS Model Number:IXFK27N80Q Place of Origin:Original Factory IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low ... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:STMicroelectronics Model Number:STP100N8F6 Place of Origin:Shenzhen, China ...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:2N60 Place of Origin:ShenZhen China ...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:IR Original Model Number:IR21094STRPBF Place of Origin:Original & New IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:original Model Number:STP45N10F7 Place of Origin:Original Manufacturer ... Contact Us High Light: STP45N10F7 Integrated IC Chip , N Channel Power MOSFETs , 100V N channel Power MOSFETs STP45N10F7 MOSFET N-channel 100 V 0 013 Ohm typ 45 A STMicroelectronics STP45N10F7 is a power field-effect transistor (MOSFET) chip suitable for |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:ON Model Number:NTTFS3A08PZTAG Place of Origin:America ...MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R 4. components -20V,-15A,6.7m ,P channel power... |
Shenzhen Res Electronics Limited
Guangdong |
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Brand Name:JUYI Model Number:JY09M Place of Origin:China ... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. |
Shanghai Juyi Electronic Technology Development Co., Ltd
Shanghai |