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10 Microseconds Rise Time Si Photodiode

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10 microseconds rise time si photodiode

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Total 2 products from 10 microseconds rise time si photodiode Manufactures & Suppliers

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S4584-04 10 Microseconds Rise Time and 1 X 3.5 Mm Photosensitive Area Si Photodiode for Sensing

Brand Name:Hamamatsu

Model Number:S4584-04

Place of Origin:Japan

Product Description: The UV Photodiode Sensor has an electrode resistance (typical) of 140 KOhms, which ensures accurate measurements and high sensitivity. Its photosensitive area measures 1 X 3.5 Mm, providing a large detection area for efficient UV light...

ShenzhenYijiajie Electronic Co., Ltd.

Verified Supplier

Guangdong

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MBRF30100VT+ Diode Triode Transistor Mosfet Array Ic 600V 15A To247

Brand Name:Diode Triode Transistor

Model Number:MBRF30100VT+

Place of Origin:USA

... Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor Polarity: N-Channel Product Type: MOSFET Number of Channels: 1 Channel Rise Time: 69 ns Vds - Drain

ShenZhen QingFengYuan Technology Co.,Ltd.

Verified Supplier

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