100ma mosfet transistor npn

Brand Name:Anterwell

Model Number:HJ44H11

Place of Origin:original factory

HJ44H11 NPN SILICON TRANSISTOR NPN EPITAXIAL PLANAR TRANSISTOR „DESCRIPTION The UTC HJ44H11 is designed for such applications as: series, shunt and switching regulators; output and driver stages of amplifiers operating at frequencies from ...

Place of Origin:US

Brand Name:Original

Model Number:2SC1623

...CJ Packaging Tape & Reel (TR) Part Status Active Transistor Type NPN Current - Collector (Ic) (Max) 100mA Voltage - Collector Emitter Breakdown (Max) 50V Vce Saturation (Max) @ Ib, Ic 300mV @ 10mA, 100mA Current - Collector Cutoff (Max) 100nA (ICBO) Power...

Model Number:PBSS4112PAN

Place of Origin:original factory

... 120 V, 1 A NPN/NPN low VCEsat (BISS) transistor General description NPN/NPN low VCEsat Breakthrough In Small Signal (BISS) transistor in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package. NPN/PNP complement...

Brand Name:Original

Model Number:MMUN2214LT1G

Place of Origin:Original

... Transistors - Pre-Biased 100mA 50V BRT NPN IC PRODUCT DESCRIPTION Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN PRODUCT PROPERTIES Manufacturer: onsemi Product Category: Bipolar Transistors - Pre-Biased Configuration: Single Transistor Polarity: NPN ...

Brand Name:ST

Model Number:TIP122

Place of Origin:Original Factory

MOSFET Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors...

Brand Name:onsemi

Model Number:MMUN2214LT1G

Place of Origin:Shenzhen,China

MMUN2214LT1G Bipolar junction Diode Transistor Pre Biased 100mA 50V BRT NPN IC Product description Part number MMUN2214LT1G is manufactured by Onsemi Company and distributed by AYE. As one of the leading distributors of electronic products, we carry many ...

Categories:RF Transistors

Country/Region:china

... Transistor Type NPN Current - Collector (Ic) (Max) 100 mA Voltage - Collector Emitter Breakdown (Max) 45 V Vce Saturation (Max) @ Ib, Ic 300mV @ 5mA, 100mA Current - Collector Cutoff (Max) 100nA DC Current Gain (hFE) (Min) @ Ic,

Brand Name:Diode Triode Transistor

Model Number:TIP137

Place of Origin:USA

...NPN 100V 6A TO220 Power Transistor Triode TIP137 Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor Polarity: N-Channel Product Type: MOSFET...

Brand Name:Freescale

Model Number:MRFE6VP5600HR5

Place of Origin:USA

MRFE6VP5600HR5 RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial (including laser and ...

Brand Name:VISHAY

Model Number:IRFP240PBF

Place of Origin:USA

IRFP240PBF 200V 20A 0.18Ohm Rated Power MOSFET Transistor TO - 247 Dynamic DV/DT Rating Repetitive Avalanche HEXFETO Power MOSFET ●Dynamic dv/dt Rating ●Repetitive Avalanche Rated ●Isolated Central Mounting Hole ●Fast Switching ●Ease of ...

Brand Name:Infineon Technologies

Model Number:IRFP4568PBF

Place of Origin:Original

... High Speed Power Switching Hard Switched and High Frequency Circuits Description 150V Single N-Channel StrongIRFET™ Power MOSFET in a TO-247 package The StrongIRFET™ power MOSFET family is

Brand Name:original

Model Number:LN2306LT1G

...MOSFET NPN Transistor PNP SOT-23(SOT-23-3) LN2306LT1G Products Description: 1. Trans MOSFET N-CH 30V 5.8A 3-Pin SOT-23 T/R 2. Diodes and Rectifiers N-channel 30V 5.8A 3. High Density Cell Design For Ultra Low On-Resistance 4 Advanced trench process technology 30V N-Channel Enhancement-Mode MOSFET...

Brand Name:Hua Xuan Yang

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Categories:Diodes Transistors

Country/Region:china

MJE182 POWER TRANSISTOR Bipolar (BJT) Single Transistor NPN 80V TO-225 MJE182G Bipolar (BJT) Single Transistor NPN 80V 3A 1.5W TO-225 Through Hole Most Popular Power Bipolar Transistors JANTX2N2222AUB BCP56-16T1G MJD122T4G BCX5616TA PZT2907AT1G BCP56-16 ...

Brand Name:Original brand

Model Number:IRF640NSTRLPBF

Place of Origin:Original Manufacturer

...MOSFET TRANSISTOR 200V SURFACE MOUNT D2PAK Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: D2PAK High Light: high power mosfet transistors , n channel mosfet transistor IRF640NSTRLPBF N-Channel Mosfet Transistor...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...MOSFET is an Ultra-hv MOSFET, a kind of High Voltage Mosfet Transistor, that offers outstanding performance in terms of heat dissipation and low on-resistance. It is equipped with advanced features such as new Lateral Variable Doping Technology, Special Power MOS Structure and excellent characteristics in high-temperature, allowing for superior performance over the conventional High Voltage MOSFET...

Place of Origin:MALAYSIA

Brand Name:MOTOROLA

Model Number:MRF422

MRF422 is a RF POWER TRANSISTORS NPN SILICON. Part NO: MRF422 Brand: MOTOROLA Date Code: 05+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:A42

SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ ...

Brand Name:onsemi

Model Number:NTR4003NT1G

Place of Origin:original

NTR4003NT1G MOSFET Power Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta...

Brand Name:Diodes Incorporated

Model Number:MMBT3904-7-F

Place of Origin:USA

MMBT3904-7-F Bipolar (BJT) Transistor NPN 40 V 200 MA 300MHz 300 MW SOT-23-3 Category Discrete Semiconductor Products Transistors - Bipolar (BJT) - Single Mfr Diodes Incorporated Series Automotive, AEC-Q101 Transistor Type NPN Current - Collector (Ic) (Max...