100v 130a fet hexfet power mosfet

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF

Place of Origin:CHINA

...100V 130A IRFB4115PBF 150v 104A Transistors TO-220AB HEXFET FETs MOSFETs Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A​ Description: This HEXFET® Power MOSFET...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF

... ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A​ Description: This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this product are a

Place of Origin:Malaysia

Brand Name:IR

Model Number:IRF7220PBF

...HEXFET Power MOSFET Specifications: Datasheets IRF7220PbF Product Photos 8-SOIC Design Resources IRF7220 Saber Model IRF7220 Spice Model PCN Obsolescence Multiple Devices 14/Dec/2012 Standard Package 4,000 Category Discrete Semiconductor Products Family FETs - Single Series HEXFET® Packaging Tape & Reel (TR) FET Type MOSFET P-Channel, Metal Oxide FET...

Brand Name:Infineon Technologies

Model Number:IRF9620PBF

Place of Origin:Multi-origin

Product Description: 1. 100V N-Channel Power MOSFET 2. Logic Level Gate Drive 3. RDS(on) = 0.16Ω 4. 70A, 7.3mΩ drain source on-resistance 5. Optimized gate charge for high efficiency 6. 175°C Operating temperature range 7. RoHS Compliant Why buy from us...

Brand Name:INFINEON

Model Number:IRF540NSTRLPBF

Place of Origin:Germany

...Power MOSFET Transistor 100V 44mΩ 33A New Orignal high quality Parameters in details: Advanced HEXFET Power MOSFETs from Packaging: the TO - 263 Type: N channel Continuous drain current (ID) at 25°C: 33A Drain-source voltage (VDSS) : 100V Gate source threshold voltage: 4V @ 250uA Leakage source on resistance: 44 MQ2@16A,10V Maximum power...

Place of Origin:China

Brand Name:ONSEMI

Model Number:HUF75639S3

High Power MOSFET HUF75639S3 N-Channel Ultra FET 100V 56A 25mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new...

Place of Origin:US

Brand Name:Original

Model Number:IRFP4668PBF

... (Qg) (Max) @ Vgs 241nC @ 10V Vgs (Max) ±30V Input Capacitance (Ciss) (Max) @ Vds 10720pF @ 50V Power Dissipation (Max) 520W (Tc)

Brand Name:Original Factory

Model Number:IPD068N10N3GATMA1

Place of Origin:CN

...Power MOSFET Surface Mount Type 100V 90A Product Description Of IPD068N10N3GATMA1 IPD068N10N3GATMA1 100V OptiMOS™ power MOSFETs offer superior solutions for high efficiency, high power-density SMPS. Product Attributes Of IPD068N10N3GATMA1 Part Number IPD068N10N3GATMA1 FET Type N-Channel Technology MOSFET...

Brand Name:Infineon

Model Number:IRF5210PBF

Place of Origin:Original Factory

...100V 40A 200W TO-220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:IOR

Model Number:IRF540NS

Place of Origin:CHINA

... Avalanche Rated Lead-Free Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast ...

Brand Name:Infineon

Model Number:IRF5210PBF

Place of Origin:Original Factory

...100V 40A 200W TO-220 DIP Mosfet Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:Hua Xuan Yang

Model Number:AP3N10BI

Place of Origin:ShenZhen China

...Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET...

Place of Origin:Original

...FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA Gate Charge (Qg) (Max) @ Vgs 103nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 5600pF @ 25V Vgs (Max) ±20V FET Feature - Power...

Brand Name:Infineon

Model Number:IRFR540ZTRPBF

Place of Origin:CHINA

IRFR540ZTRPBF 1.Features Advanced Process Technology Ultra Low On-Resistance 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free Halogen-Free 2.Description This HEXFET® Power MOSFET utilizes the latestprocessing ...

Brand Name:Toshiba

Model Number:TK100E10N1,S1X(S

Place of Origin:JAPAN

Product Description: Toshiba TK100E10N1,S1X(S Power IC Chip, which is a 650V, 30A MOSFET N, is an excellent choice for applications that require excellent performance even in extreme conditions. With its operating temperature range of -55℃ ~ +150℃ and ...

Brand Name:Diodes Incorporated

Model Number:ZXMN10A07FTA

Place of Origin:China

ZXMN10A07FTA N-Channel 100 V 700mA 625mW Surface Mount SOT-23-3 Diode Schottky 100 V 1A Surface Mount SMB Single Rectifiers Diodes MBRS1100T3G PRODUCT DESCRIPTION This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain ...