112 series power mosfet

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Original

...Power MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDC6306P

High Power MOSFET FDC6306P Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components ...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

... FQPF5N60C hot sale and in stock, wholesale will get good quote. Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current -

Brand Name:IRF

Model Number:IRLML6402TRPBF

Place of Origin:Original

...Power MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

... based on the national military standard production line, this MOSFET is designed to meet the stringent requirements of military and industrial applications where performance and durability are paramount. As a device type MOSFET, this high power MOSFET is

Brand Name:HT

Model Number:F4N65L TO-220F-3L

Place of Origin:China

...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power

Brand Name:ABB

Model Number:SAFT-112-POW

Place of Origin:Sweden

.../IC200/IC660/IC670/IS200/DS200 series ---Honeywell:TDC 2000/TDC3000/TPS/Security systems ---Schneider:Quantum 140 series ---Siemens:MOORE/6ES5/6GK/6DD/6AR Series ---Woodward:505/505E(9907-162,9907-164, 9907-165, 9907-167)

Place of Origin:Malaysia

Brand Name:IXYS

Model Number:IXFN27N80

... FET Type MOSFET N-Channel, Metal Oxide FET Feature Standard Drain to Source Voltage (Vdss) 800V Current - Continuous Drain (Id) @ ...

Brand Name:Infineon Technologies

Model Number:IRF7476TRPBF

Place of Origin:Multi-origin

...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5

Categories:Discrete Semiconductors

Country/Region:china

POWER MOSFET TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) 　 APT94N65B2C3G POWER MOSFET TRANSISTOR Mfr MICROSEMI/MICROCHIP Series - Package Tube Product Status Obsolete Mounting Type Through Hole Operating Temperature - Supplier Device Package APT94N65B2C3G POWER MOSFET TRANSISTOR Package / Case MOSFET...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ...

Brand Name:Original Factory

Model Number:IPT020N10N5ATMA1

Place of Origin:China

Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET...

Brand Name:Original Factory

Model Number:IMBG65R163M1HXTMA1

Place of Origin:CN

...Power MOSFET Transistors TO-263-8​ Product Description Of IMBG65R163M1HXTMA1 IMBG65R163M1HXTMA1 SMD Compact Package SiC MOSFET, CoolSiC™ MOSFET technology enhances the unique benefits of device performance, robustness and ease of use by maximizing the powerful physical properties of silicon carbide. Specification Of IMBG65R163M1HXTMA1 Part Number: IMBG65R163M1HXTMA1 Series...

Brand Name:IOR

Model Number:IRFZ44NPBF

Place of Origin:CHINA

...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs...

Brand Name:STMicroelectronics

Model Number:STP100N8F6

Place of Origin:Shenzhen, China

...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power

Brand Name:Hua Xuan Yang

Model Number:2N60

Place of Origin:ShenZhen China

...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits.

Brand Name:IR Original

Model Number:IR21094STRPBF

Place of Origin:Original & New

IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS...

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power...

Brand Name:Microchip Technology

Model Number:TC4426EOA713

... TC4426EOA713 TC4426EOA713 Specification: Part number TC4426EOA713 Category Integrated Circuits (ICs) 　 PMIC - Gate Drivers Mfr Microchip Technology Series - Package Tape & Reel (TR) Part Status Active Driven Configuration Low-Side

Brand Name:JUYI

Model Number:JY09M

Place of Origin:China

... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.