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All 130a rf transistors wholesalers & 130a rf transistors manufacturers come from members. We doesn't provide 130a rf transistors products or service, please contact them directly and verify their companies info carefully.
| Total 44 products from 130a rf transistors Manufactures & Suppliers |
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Categories:RF Transistors Country/Region:china IRF1407PBF N-Channel 75 V 130A (Tc) 330W (Tc) Through Hole TO-220AB RF Transistors Manufacturer: Infineon Product Category: MOSFETs RoHS: - REACH - SVHC: - Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel ... |
Wisdtech Technology Co.,Limited
Guangdong |
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Brand Name:Analog Devices Inc. Model Number:AD9361BBCZ Place of Origin:Multi-origin ...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF... |
Shenzhen Sai Collie Technology Co., Ltd.
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Categories:Electronic Semiconductors Country/Region:china ..., high gain, and high-speed performance in compact packages. Key Features: Type: NPN RF Transistor Transition Frequency (ft): 25 GHz Noise Figure (NF): 0.75 dB at 2 GHz Gain (Gmax): 21 dB at 1.8 ... |
Shenzhen Chive Electronics Co., Ltd.
Guangdong |
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Brand Name:Fuji Electric Model Number:FLM0910-25F Place of Origin:JP FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to ... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:VBE Model Number:VBE36015E2 Place of Origin:CHINA
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VBE Technology Shenzhen Co., Ltd.
Guangdong |
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Model Number:BFQ67W Place of Origin:CN ... to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies. |
ChongMing Group (HK) Int'l Co., Ltd
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Place of Origin:CN Brand Name:Original Factory Model Number:QPD0007 Wireless Communication Module QPD0007 Single-Path 5GHz 20W 48V GaN RF Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Anterwell Model Number:BFR91A Place of Origin:original factory Stock Offer (Hot Sell) Part no. Quantity Brand D/C Package EPM3128ATC100-10N 3000 ALTERA 16+ TQFP-100 HFA08TB60PBF 3000 VISHAY 16+ TO-220 HT7533-1 3000 HOLTEK 13+ SOT89 HT9170B 3000 HOLTEK 15+ DIP18 IMP811T 3000 IMP 16+ SOT143 IRF840PBF 3000 VISHAY 16+ ... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:TX TELSIG Model Number:YP242434 Place of Origin:China TXtelsig YP242434 Wifi RF Amplifier 2.4GHz 802.11b/g/n WLAN Power Amplifier The YP242434 is a high-power, high- linearity power amplifier based on the highly-reliable InGaP/GaAs HBT technology. It can be easily configured for high-power, high- linearity ... |
Shenzhen TeXin electronic Co., Limited
Guangdong |
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Model Number:SD1480 Place of Origin:Malaysia Brand Name:KAIGENG SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:... |
Shenzhen Kaigeng Technology Co., Ltd.
Guangdong |
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Brand Name:original Model Number:FCF06A40 Place of Origin:original Product Category: Rectifiers Mounting Style: Through Hole Package / Case: TO-220-3 Vr - Reverse Voltage: 400 V If - Forward Current: 6 A Type: Fast Recovery Rectifiers Configuration: Single Max Surge Current: 60 A Ir - Reverse Current: 20 uA Recovery Time... |
Walton Electronics Co., Ltd.
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Brand Name:MITSUBISHI Model Number:RA20H8087M Place of Origin:JAPAN
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G-Resource Electronics Co.,Ltd
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Categories:Coaxial Connectors (RF) - Adapters Country/Region:china ..., please refer to the data sheet, such as PDF files Docx documents, etc. We have 930-130A-51S high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to ... |
Rozee Electronics Co., Ltd
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Model Number:IRF3710PBF Place of Origin:United States Brand Name:Original #detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:405.95399188092017px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root .magic-2{margin-top:-3px;margin-left:0;width:... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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Place of Origin:US Brand Name:Original Model Number:IRFP4668PBF Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 9.7 ... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Brand Name:Infineon Technologies/International Rectifier IOR Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF Place of Origin:CHINA ...40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Transistors TO-220AB HEXFET FETs MOSFETs Transistors N-Channel 180A 200W Through Hole TO-220AB HEXFET FETs MOSFETs ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Description: This... |
Angel Technology Electronics Co
Hongkong |
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Brand Name:Infineon Technologies/International Rectifier IOR Model Number:IRFB7440PBF IRFB4310PBF IRFB4115PBF ... ---IRFB7440PBF 40V 120A IRFB4310PBF 100V 130A IRFB4115PBF 150v 104A Description: This HEXFET® Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per ... |
Guangzhou Topfast Technology Co., Ltd.
Guangdong |
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Brand Name:NXP Model Number:BFS505 Place of Origin:CHINA ...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Place of Origin:Original PSMN3R9-60PSQ Specifications Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 130A (Tc) Drive Voltage (Max Rds On,Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 1mA ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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