175 watts silicon power transistor

Categories:RF Transistors

Country/Region:china

...Series 20 AMPERE NPN Silicon Power Transistor 400- 500 VOLTS 175 WATTS Category Transistor Mfr Motololar Series - Part Status - Mounting Type - The MJ13333 transistor is designed for high voltage, high–speed, power switching in inductive circuits where ...

Brand Name:Anterwell

Model Number:MJL21193 MJL21194

Place of Origin:original factory

Silicon Power Transistors PNP MJL21193 NPN MJL21194 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head ...

Place of Origin:PHILIPPINE

Brand Name:ON Semiconductor

Model Number:BUV21G

... VOLTS − 250 WATTS Applications: • High DC Current Gain: hFE min = 20 at IC = 12 A • Low VCE(sat), VCE(sat) ...

Model Number:MJL21193 MJL21194

Place of Origin:original factory

Silicon Power Transistors PNP MJL21193 NPN MJL21194 16 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS 200 WATTS The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head ...

Brand Name:Hua Xuan Yang

Model Number:AP12N10D

Place of Origin:ShenZhen China

...Power Switch Transistor , Original Silicon Power Transistor General Description: The AP12N10D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID = 5A RDS(ON) < 140mΩ @ VGS=4.5V Application Battery protection Load switch Uninterruptible power

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:A42

SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN) FEATURE Low Collector-Emitter Saturation Voltage High Breakdown Voltage Marking :D965A MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage ...

Brand Name:SAIKELI

Model Number:MJE3055T

Place of Origin:China

...Silicon Plastic Power Transistors Description 10 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60 VOLTS − 75 WATTS There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC − VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor...

Brand Name:Mitsubishi

Model Number:RA30H1317M

Place of Origin:JP

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The

Brand Name:Original brand

Model Number:STL26N60DM6

Place of Origin:Original

Mosfet Power Transistor STL26N60DM6 MOSFET N-channel 600 V, 175 mOhm typ HV package Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines...

Brand Name:Honeywell

Model Number:SPS5713

Place of Origin:USA

...Power Transistor Device Product Details: 51199930100 DISCONTINUED BY MANUFACTURER MAIN POWER RACK INPUT:100-240 VAC,47-63 Hz 10A OUTPUT:24-26 VDC,20A AMBIENT EMPERATURE: O"C TO 60 °C 15.00 lbs CC-TAIX11 51308365-175 CC-TDOB11 51308373-175 CC-TDIL01 51308386-175 CC-TAIM01 51305959-175 CC-TAIX01 51308363-175 CC-TCF901 51308301-175 CC-TDOB01 51308371-175 CC-TAOX11 51308353-175

Brand Name:ON

Model Number:FGH60N60SMD

Place of Origin:Original

...Power Transistor 60a 600v To247 Igbt Transistors Description Using novel field stop IGBT technology, ON Semiconductor’s new series of field stop 2nd generation IGBTs offer the optimum performance for solar inverter, UPS, welder, telecom, ESS and PFC applications where low conduction and switching losses are essential. Features Maximum junction temperature : TJ =175...

Brand Name:Original Factory

Model Number:IMBG65R039M1HXTMA1

Place of Origin:CN

Silicon Carbide Transistors IMBG65R039M1HXTMA1 Integrated Circuit Chip TO-263-8​ Product Description Of IMBG65R039M1HXTMA1 IMBG65R039M1HXTMA1 is N-Channel 650V CoolSiC M1 SiC Trench Power Device, built over the solid silicon carbide technology. Specification Of IMBG65R039M1HXTMA1 Part Number IMBG65R039M1HXTMA1 ID (@25°C) max 54 A Operating Temperature min max -55 °C 175...

Brand Name:VISHAY

Model Number:SUD50P06-15L-E3

Place of Origin:Original Manufacturer

...: TO-252 High Light: n channel mosfet transistor , n channel transistor SUD50P06-15L-E3 Integrated Circuit IC Chip MOSFET P-CH 60V 50A TO252 TrenchFET Series P-Channel 60 V (D-S), 175 °C MOSFET FEATURES 1, TrenchFET® Power MOSFET 2, 175 °C Junction

Brand Name:TRICONEX

Model Number:8312

Place of Origin:UK

...Power Module 230 VAC – 175-Watt new and original Each Tricon Chassis is equipped with two Power Modules—either one is fully capable of running the controller at full load and rated temperature. Power Modules convert line power to DC power appropriate for all Tricon modules. Any combination of Power Module models can be used in Tricon systems The Power...

Brand Name:Leyond

Model Number:LY-FL39080-XX

Place of Origin:Shenzhen,China

130lm/w IP65 70W 80W 100W LED Flood Light Fixture 4000K/5000K 175 Watt MH Equivalent 1. Outlook of 80W LED Flood Light Fixture: 2. Application of 80W LED Flood Light Fixture: > Projector / Floodlight > Tunnel Lighting / Pathway Lighting / Park Lighting > ...

Brand Name:Infineon

Model Number:IRF5210PBF

Place of Origin:Original Factory

...Power Transistor Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power...

Brand Name:NEC

Model Number:2SC2987

Place of Origin:JAPAN

2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;...

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Silicon Carbide MOSFETs, also known as Metal Oxide Semiconductor Field Effect Transistors (MOSFETs) based on Silicon Carbide, are high-power, high-efficiency electronic components used in a wide variety of applications, including Solar Inverters, High-voltage DC/DC Converters, Motor Drivers, UPS Power Supplies, Switching Power Supplies, and Charging Piles. Featuring an N-type silicon...