200v p channel mosfet ic

Brand Name:Original

Model Number:IRF9640PBF

Place of Origin:Original

IRF9640PBF Integrated Circuit IC Chips Electronic Components IC MOSFET PRODUCT DESCRIPTION Part number # IRF9640PBF is manufactured by Vishay Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we carry many ...

Model Number:FQPF10N20C

Place of Origin:original factory

FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced ...

Brand Name:Anterwell

Model Number:FQPF10N20C

Place of Origin:original factory

FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced ...

Brand Name:Original brand

Model Number:IRF640NSTRLPBF

Place of Origin:Original Manufacturer

...CHANNEL MOSFET TRANSISTOR 200V SURFACE MOUNT D2PAK Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: D2PAK High Light: high power mosfet transistors , n channel mosfet transistor IRF640NSTRLPBF N-Channel Mosfet Transistor 200V...

Brand Name:INFINEON

Model Number:BSC220N20NSFD

INFINEON Chip BSC220N20NSFD MOSFET N-CH 200V 52A TSON-8 Manufacturer: Infineon Product Category: MOSFET Packaging: Reel Brand: Infineon Technologies Product Type: MOSFET Subcategory: MOSFETs Company introduction: Hong Kong Interra Technology Co., Ltd. is ...

Brand Name:Vishay Semiconductors

Model Number:SI7121DN-T1-GE3

Place of Origin:USA

SI7121DN-T1-GE3 MOSFET 30V 16A 52W 1.8mohm @ 10V Manufacturer: Vishay Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: PowerPAK-1212-8 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-...

Brand Name:Infineon Technologies

Model Number:IRFB7434PBF

Place of Origin:United States

IRFB7434PBF N-Channel 40 V 195A (Tc) 294W (Tc) Through Hole TO-220AB Features: Category Single FETs, MOSFETs Mfr Infineon Technologies Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - ...

Brand Name:OEM/ODM

Place of Origin:China

Model Number:FDB035N10A

Product Description: Programmable IC Chip is a powerful and reliable data acquisition IC that can be used in various applications. It features adjustable current output up to 2.7V to 5.5V, ESD protection of 2KV HBM, programming time of 10ms to 10s and ...

Place of Origin:United States

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Brand Name:Original

Model Number:IXTY08N100D2

Place of Origin:Original

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Brand Name:IOR

Model Number:IRFP260N

Place of Origin:CHINA

...Channel MOSFET 200V 50A 300W Through Hole TO-247AC Features Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Ease of Paralleling Simple Drive Requirements TO-247AC Lead-Free FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDS2670

...MOSFET FDS2670 200V N-Channel PowerTrench® MOSFET 3.0A, 130mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC...

Brand Name:onsemi

Model Number:FDD2670

Place of Origin:original

FDD2670 MOSFET Power Electronics TO-252AA Package 200V N-Channel High power and current handling capability FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200 V Current - Continuous Drain (Id) @ 25°C 3.6A (Ta) Drive ...

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...Channel 200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:Hua Xuan Yang

Model Number:5N20DY

Place of Origin:ShenZhen China

...200V N-Channel Enhancement Mode MOSFET DESCRIPTION The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other FEATURES VDS =200V...

Brand Name:Vishay

Model Number:IRFP9240PBF

Place of Origin:Original

... •Simple drive requirements •Material categorization: for definitions of compliance DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and

Brand Name:Infineon

Model Number:IRFB260NPBF

Place of Origin:China

... 1:High Voltage Capability: A drain-source voltage (Vds) of 200V, making it suitable for high-voltage applications such as switch-mode power supplies (after AC rectification, e.g., 85-265VAC), motor drives, and ...

Brand Name:VISHAY

Model Number:IRFP9240PBF

Place of Origin:USA

...Mosfet 12A / 200V P-Channel Original FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • P-Channel • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs...

Model Number:NTMFS4833NT1G

Place of Origin:America

Brand Name:ON

NTMFS4833NT1G MOSFET N-CH 30V 16A/156A 5DFN mosfet transistor Products Description: 1. NTMFS4833NT1G field effect tube, MOSFET, N channel, 30V, 191A, DFN5 N channel power MOSFET, 30V 2. NTMFS4833NT1G N-channel MOSFET Transistor; 191 A; 30 V; 8-Pin SO-8FL...

Brand Name:Original Brand

Model Number:IRLML6402TRPBF

Place of Origin:CN

... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and