2170 mhz rf mosfet transistors

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

... A Vds - Drain-Source Breakdown Voltage: 70 V Operating Frequency: 175 MHz Gain: 13 dB Output Power: 300 W Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / ...

Brand Name:Freescale

Model Number:MRFE6VP5600HR5

Place of Origin:USA

...RF Mosfet LDMOS (Dual) 50V 100mA 230MHz 25dB 600W NI-1230 These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aerospace and radio/land mobile applications. They are unmatched input and output designs allowing wide frequency range utilization, between 1.8 and 600 MHz...

Place of Origin:MALAYSIA

Model Number:PTB20031

PTB20031 IS A 40 Watts, 420-470 MHz RF Power Transistor. Part NO: PTB20031 Brand: Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products are ...

Brand Name:ST

Model Number:PD57018-E

Product name:PD57018-E Manufacturer: STMicroelectronics Product Category: RF Metal Oxide Semiconductor Field Effect (RF MOSFET) Transistors Transistor Polarity: N-Channel Technology: Si Id-Continuous Drain Current: 2.5 A Vds-drain-source breakdown voltage...

Brand Name:Infineon / CYPRESS

Model Number:CYW43362KUBGT

Place of Origin:original

CYW43362KUBGT RF Power Transistor 2.4 GHz WLAN CMOS amplifier Package 69-UFBGA Type TxRx + MCU RF Family/Standard WiFi Protocol 802.11b/g/n Modulation 16QAM, 64QAM, BPSK, CCK, DSSS, QPSK, OFDM Frequency 2.4GHz Data Rate (Max) 72Mbps Power - Output 18.5dBm ...

Model Number:AFT21S232S

Place of Origin:Malaysia

Brand Name:KAIGENG

AFT21S232S N/A Electronic Components IC MCU Microcontroller Integrated Circuits AFT21S232S #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...

Brand Name:VISHAY

Model Number:S525T-GS08

Place of Origin:USA

VISHAY IC S525T-GS08 Surface Mount SOT-223 S525T Product Paramenters Manufacturer: Vishay Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 mA Vds - Drain-Source Breakdown Voltage: ...

Brand Name: Semiconductors

Model Number:AFT05MS003NT1

... Attribute Value Manufacturer: Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 2.6 A Vds - Drain-Source Breakdown Voltage: - 500 mV, 30 V Operating Frequency: 1.8 MHz to 941 MHz Gain:

Brand Name:original

Model Number:MRF9045LR1

Place of Origin:original

...RF Bipolar Transistors Si original in stock The ASI MRF9045LR1 is a high voltage, gold-metalized, laterally diffused metal oxide semiconductor. Ideal for today's RF power amplifier Applications. Product Category: RF MOSFET Transistors RoHS: Details Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 4.25 A Vds - Drain-Source Breakdown Voltage: 65 V Operating Frequency: 945 MHz...

Brand Name:ZD

Place of Origin:China

Model Number:101

5G IBS Components Diplexer 1710-1880 1920-2170 MHz,4.3-10F Indoor Applications: Components Diplexer 1710-1880 1920-2170 MHz,4.3-10F 1. Mobile Communication Network Optimization and In-door distribution system. 2. Cluster communication, satellite ...

Model Number:MRF9030

Place of Origin:original factory

The RF Sub–Micron MOSFET Line RF POWER FIELD EFFECT TRANSISTORS N–Channel Enhancement–Mode Lateral MOSFETs 945 MHz, 30 W, 26 V LATERAL N–CHANNEL BROADBAND RF POWER MOSFETs Designed for broadband commercial and industrial applications with ...

Brand Name:SWT

Model Number:SW-PA-18052170-53C

Place of Origin:China

...2170 MHZ Psat 53dBm Rf Power Amplifier Description The module is designed for both military and commercial applications. The latest device technologies and design methods are employed to offer high power density, efficiency, and linearity in a small, lightweight package. Specification Specifications subject to change without notice. Typical performance at +28VDC +25oC, and in a 50Ω system. RF...

Brand Name:SANYO

Model Number:2SD1625

Place of Origin:Philippines

Silicon RF Power Mosfet Transistors IC 2SD1625 PNP / NPN Epitaxial Planar 2SD1625 Driver Applications PNP/NPN Epitaxial Planar Silicon Transistors IC Applications Motor drivers, printer hammer drivers, relay dreiver,voltage regulator control Features High ...

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor...

Place of Origin:China

.... Specifications: Frequency Range(MHz) 1710-2170 2300-2690 Insertion Loss(dB) < 0.4 Isolation(dB) > 50 VSWR ≤ 1.25 PIM3 (dBc@2*43dBm) ≤ -160 Input Power(W) 200 Impedance(Ω) 50 DC/AISG By-pass(max. 3000mA) Lightning protection 10KA; 10/350μs pulse RF

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates...

Model Number:2N3819

Brand Name:Original

Place of Origin:US

Product Description Product Detail Packaging Bulk Part Status Obsolete Transistor Type N-Channel JFET Frequency - Gain - Current Rating (Amps) 100mA Noise Figure - Power - Output - Voltage - Rated 25V Package / Case TO-226-3, TO-92-3 (TO-226AA) Supplier ...

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely high dv/dt • Optimized body diode...

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Brand Name:Vinncom

Model Number:VN-CB4X1-0727-OD

Place of Origin:China

698-960,1710-1880,1920-2170,2500-2690 MHz DIN Female 4 to 1 combiner PIM-150dBc Good returen loss Good VSWR at all ports Portable for installation Part Number VN-CB4X1-0727-OD Operating Frequency ( MHz ) 698-960,1710-1880, 1920-2170,2500-2690 MHz Insertion...