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All 2n5485 rf amplifier transistor wholesalers & 2n5485 rf amplifier transistor manufacturers come from members. We doesn't provide 2n5485 rf amplifier transistor products or service, please contact them directly and verify their companies info carefully.
| Total 204 products from 2n5485 rf amplifier transistor Manufactures & Suppliers |
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Model Number:XRF286S Place of Origin:Malaysia Brand Name:KAIGENG XRF286S N/A Electronic Components IC MCU Microcontroller Integrated Circuits XRF286S #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:... |
Shenzhen Kaigeng Technology Co., Ltd.
Guangdong |
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Place of Origin:MALAYSIA Brand Name:MOTOROLA Model Number:MRW53601 ... specializes in High frequency microwave devices: These products are widely used in micro-cellular amplifier, CATV radio and television transmitters, GSM / CDMA / PHS repeaters, trunk amplifiers, tower mounted amplifiers, microwave communication equipment, |
Mega Source Elec.Limited
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Brand Name:Analog Devices Inc. Model Number:HMC789ST89ETR Place of Origin:Multi-origin ...RF Power Transistors Product Description: The HMC789ST89ETR RF Power Transistors are high-performance, high-frequency, high-power transistors suitable for use in amplifier applications. The HMC789ST89ETR offers excellent gain and power performance, as well as low noise, which makes it ideal for use in both linear and power amplifier applications. Features: - High-performance, high-frequency, high-power transistor... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:VBE Model Number:VBE10R5 Place of Origin:CHINA Excellent Theramal Stability Rf Power Amplifier Transistor LDMOS FET 28V HF to 2.7GHz |
VBE Technology Shenzhen Co., Ltd.
Guangdong |
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Brand Name:Mitsubishi Model Number:RD06HVF1 Place of Origin:CN ... gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Place of Origin:Jiangsu, China Brand Name:SZHUASHI Model Number:YP40601625T SZHUASHI 100% New YP40601625T 30W 50V 5700- 5900MHz PA Power Amplifier RF Power Transistor with Standard Features Product Description The YP40601625T is a 30-watt, internally matched GaN HEMT, designed for multiple applications with frequencies ... |
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Jiangsu |
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Brand Name:Original Model Number:SZA5044Z Place of Origin:Original ...Amplifiers RF Amplifier IRFHM9331TRPBF MSP430FR2100IPW16R Wireless RF Integrated Circuits Product Description RFMD’s SZA-5044 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier... |
Walton Electronics Co., Ltd.
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Brand Name:TeXin OEM Model Number:TX-UHF100W Place of Origin:Shenzhen, China ... can be used for signal jammer assembly . This RF module has rugged exterior aluminum alloy shell , and with temperature and standing wave protection , have good performance . Other frequency bands of RF module can be customized as below : 10-6000MHz ,5 |
Shenzhen TeXin electronic Co., Limited
Guangdong |
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Brand Name:ON Model Number:MMBF5484 Place of Origin:ON ...: RF JFET Transistors RoHS: Details Transistor Type: JFET Technology: Si Transistor Polarity: N-Channel Vgs - Gate-Source Breakdown Voltage: - 25 V Id - Continuous Drain Current: 5 mA Maximum Drain ... |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Brand Name:NXP Model Number:BFS505 Place of Origin:CHINA ...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Brand Name:SWT Model Number:SW-PA-8002000-60C Place of Origin:China ...Amplifier Psat 57 dBm High Power RF Amplifier For Test and Measurement Description The 0.8-2 GHz Psat 57 dBm RF Power Amplifier Box is a high-performance amplifier designed for a wide range of RF applications, including communications, radar, and electronic warfare. This amplifier... |
Nanjing Shinewave Technology Co., Ltd.
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Categories:RF Interconnects Country/Region:china ...: 60 mA Gain: 24 dB NF - Noise Figure: 2.9 dB Type: Low Noise Amplifiers Mounting Style: SMD/SMT Package / Case: Y460 P1dB - Compression Point: 5 dBm OIP3 - Third Order Intercept: 14 ... |
Wisdtech Technology Co.,Limited
Guangdong |
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Place of Origin:China Brand Name:OEM ...GaN RF Amplifier Module for Anti Drone System Fpv Defense System Product Parameters Place of Origin Guangdong, China Brand Name PADI FLY Place of Origin Guangdong, China Product Name RF power amplifier module(GaN) Frequency 400MHZ(420-450/430-460/428-... |
Padi Fly Technology Co., Ltd
Guangdong |
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Place of Origin:Original and New Brand Name:CJ/Changdian Model Number:TIP41C TO-220 ... distributor of electronic components, including analog, digital, and RF integrated circuits, widely used in aerospace, military, medical, automotive, and consumer electronics. We offer product sourcing, design support, and have a ... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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Brand Name:LDSK Place of Origin:Guangdong, China ...monitoring technical indicators of the power amplifier module stipulate the definition of each port of the module and the shape and structure of the module. RF Power Amplifier Rf Amplifier Board Rf Amplifier Module Anti-FPV Drone Security System Rf Power |
Shenzhen Ladasky Technology Co.,Ltd
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Model Number:BFS505 Place of Origin:CHINA ...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:WDS Model Number:BiAMP RF Place of Origin:China ...RF Amplifier BiAMP RF Power Amplifier Provides 40/20/10/5W,150M/230M/400M/600M/800M/900M/1.4G/2.3G/5GHz Linear/Unlinear RF Amplifier, Designed For Broadband/Narrowband Digital Data Link Applications. This Series of Amplifiers Adopts Silicon Based Potassium Nitride Power Amplifier, High Speed Automatic Tx/Rx Switching,High Efficiency RF... |
Shenzhen Sinosun Technology Co., Ltd.
Guangdong |
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Brand Name:Amplifier Research Model Number:75A250A Place of Origin:USA Amplifier Research 75A250A RF Amplifier Used Tested in Good Conditions Description of Amplifier Research 75A250A RF Amplifier The Amplifier Research 75A250A amplifier is a portable, self-contained, air-cooled, broadband, solid state amplifier unit designed for laboratory applications where instantaneous bandwidth, high gain and moderate power output are required. When used with an RF... |
Shenzhen Meigaolan Electronic Instrument Co. Ltd
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Brand Name:MXT Model Number:TDD4200T4400M 10W-28V Place of Origin:China High Frequency 4G Band 4200MHz 4400MHz Output Power 40dBm 10W RF Amplifier TD-LTE COFDM Product Description: The LTE Power Amplifier is designed to provide high efficiency amplification in COFDM signal applications. It is small in size (170*110*20mm) and... |
Shenzhen Maixintong Technology Co., Ltd
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Brand Name: /Linear Technology Model Number:LT5524EFE#PBF LT5524EFE#TRPBF Place of Origin:Malaysia ...RF Amplifier IC General Purpose 0Hz ~ 540MHz 20-TSSOP electronics ic chips LT5524EFE#PBF LT5524EFE#TRPBF RF Amplifier IC General Purpose 0Hz ~ 540MHz 20-TSSOP-EP IC RF AMP GP 0HZ-540MHZ 20TSSOP Specification: Part number LT5524EFE#PBF LT5524EFE#TRPBF Category Electronic components-integrated circuits Family RF Detectors RF Amplifier... |
Angel Technology Electronics Co
Hongkong |