49v 80a transistors fets

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:BTS282Z E3230

Place of Origin:Malaysia

...49V 80A Transistors FETs BTS282ZE3230AKSA2 power MOSFET from Infineon Technologies. Its maximum power dissipation is 300000 mW. In order to ensure parts aren't damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor...

Brand Name:Infineon Technologies/International Rectifier IOR

Model Number:BTS282Z E3230

...'t damaged by bulk packaging, this product comes in tube packaging to add a little more protection by storing the loose parts in an outer tube. This MOSFET transistor has an operating temperature range of -40 °C to 175 °C. This N

Brand Name:INFINEON

Model Number:BTS282ZE3230

Place of Origin:INFINEON

... RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-220-7 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 49 V Id - Continuous Drain Current: ...

Place of Origin:Original

FTCO3V455A1 Specifications Part Status Active FET Type 6 N-Channel (3-Phase Bridge) FET Feature Logic Level Gate Drain to Source Voltage (Vdss) 40V Current - Continuous Drain (Id) @ 25°C 150A Rds On (Max) @ Id, Vgs 1.66 mOhm @ 80A, 10V Vgs(th) (Max) @ Id...

Brand Name:NEXPERIA

Model Number:NX7002AK

Place of Origin:CHINA

NX7002AK NEXPERIA N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted D Product Technical Specifications EU RoHS Compliant ECCN (US) EAR99 Part Status Active SVHC Yes Automotive No PPAP No Product Category ...

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to provide optimum power and gain in a 50Ωsystem List Of Other Electronic Components...

Brand Name:AOS

Model Number:AO3407A

Place of Origin:original

AO3407A MOSFET Power Electronics Transistors FETs MOSFETs P-Channel 30 V 4.3A 1.4W Surface Mount Package SOT-23-3 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ ...

Brand Name:Original Factory

Model Number:IPL60R225CFD7AUMA1

Place of Origin:China

IPL60R225CFD7AUMA1 Stock MOSFET Transistor FET Good Price Product Description IPL60R225CFD7AUMA1 offers a cost-optimized, 10mΩ low on-resistance RDS(on), enabling increased power ...

Brand Name:Original Factory

Model Number:IMZA65R083M1H

Place of Origin:CN

Integrated Circuit Chip IMZA65R083M1H Transistors FETs MOSFETs TO-247-4 Product Description Of IMZA65R083M1H IMZA65R083M1H is CoolSiC™ MOSFET 650V – SiC MOSFET delivering reliable and cost-effective performance in TO247 4-pin package. Specification Of ...

Brand Name:ST brand

Model Number:STB270N4F3 STB270N TO-263-3

Place of Origin:Japan

Brand new MOS FET STB270N4F3 STB270N TO-263-3 mosfet Model number/ Part number STB270N4F3 STB270N Package TO-263- 3 Original condition Original 100% Brand name ST Stock Yes! In stock!! Bulk!! Contact me now Whatsapp/ Skype/ Number 86- 15102073750 - Product...

Brand Name:Infineon Technologies

Model Number:BSC320N20NS3G

Place of Origin:Original

Features •N-channel,normallevel •ExcellentgatechargexRDS(on)product(FOM) •Verylowon-resistanceRDS(on) •Pb-freeleadplating;RoHScompliant •QualifiedaccordiCM GROUPoJEDEC1)fortargetapplication •Halogen-freeaccordiCM GROUPoIEC61249-2-21 •Idealforhigh-...

Place of Origin:Guangdong, China

Brand Name:neutral

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Model Number:CGH40010F

Place of Origin:Malaysia

Brand Name:KAIGENG

CGH40010F N/A Electronic Components IC MCU Microcontroller Integrated Circuits CGH40010F #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...

Brand Name:Nexperia

Model Number:BUK9M3R3-40HX

...Transistors - FETs, MOSFETs - Single Mfr Nexperia USA Inc. Series Automotive, AEC-Q101 Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 40 V Current - Continuous Drain (Id) @ 25°C 80A...

Model Number:STP80NF55-08

Brand Name:Original

Place of Origin:US

...FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 80A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 8mOhm @ 40A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 3740pF @ 15V FET...

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor...

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor...

Brand Name:ST

Model Number:STGW80H65DFB

Place of Origin:Original

...Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors Technology: Si...

Brand Name:ON

Model Number:NTTFS3A08PZTAG

Place of Origin:America

NTTFS3A08PZTAG Transistors FETs MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel ...

Brand Name:FAIRCHILD

Model Number:FDB3632

Place of Origin:Thailand

FDB3632 / FDP3632 / FDI3632 N-Channel PowerTrench® MOSFET 100V, 80A, 9mΩ Features • rDS(ON) = 7.5mΩ (Typ.), VGS = 10V, ID = 80A • Qg(tot) = 84nC (Typ.), VGS = 10V • Low Miller Charge • Low QRR Body Diode • UIS Capability (Single Pulse and Repetitive Pulse...