50v mos transistor

Place of Origin:PHILIPPINE

Brand Name: Semiconductors

Model Number:BLF248

... range.The transistor is encapsulated in a 4-lead SOT262 A1 balanced flange envelope, with two ceramic caps. The mounting flange provides the common source connection for the transistors. Applications: • High power gain • Easy power control •

Brand Name:RKENS

Model Number:RS-909A

Place of Origin:China

Manufacturers Supply Triode Forming Machine MOS Transistor Bending 90 Degrees Machine Intro: RS-909A is a full automatic and fast speed transistor lead forming machine. It can automatic feed transistor, detect back and front side. Forming tool can be ...

Brand Name:Original Factory

Model Number:IMBG65R039M1HXTMA1

Place of Origin:China

Transistor N Channel MOS Transistor IMBG65R039M1HXTMA1 New Parts MOSFET Transistors Product Description Commutation robust fast body diode Reduced system cost and complexity Higher robustness and system reliability Product Specifications Part ...

Brand Name:Original Factory

Model Number:IXBH10N300HV

Place of Origin:CN

... MOS Transistor. Specification Of IXBH10N300HV Part Number IXBH10N300HV Voltage - Collector Emitter Breakdown (Max) 3000 V Current - Collector (Ic) (Max) 34 A ...

Country/Region:china

...transistors is very large. It is a solid semiconductor device with multiple functions such as detection, rectification, amplification, switching, voltage regulation, and signal modulation.Pingshang Technology´s main SMD transistor series, the main categories are: SMD diodes, SMD transistors, field effect transistors and MOS transistors.Free samples, provided for life!The transistor...

Model Number:FDPC5018SG

Place of Origin:America

Brand Name:ON

FDPC5018SG Electronic part MOS transformer Bom service Original high power mosfet transistor #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#...

Place of Origin:Original and New

Brand Name:CJ/Changdian

Model Number:C945 NPN

Integrated Circuits IC Original and New,C945 NPN 150MA 50V amplifier transistor TO-92 CJ/Changdian original authentic [Who we are?] Shenzhen QINGFENGYUAN Technology Co., Ltd established in 2013, is a leading distributor of electronic components, including ...

Model Number:SGT75T65SDM1P7

Place of Origin:original

Brand Name:original

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Brand Name:RKENS

Model Number:RS-920A

Place of Origin:China

RS-920A TO 220 Transistor Forming And Cutting Machine Intro: RS-920A is automatic transistor lead forming machine for TO220, 92, 126,etc. This machine is specially for bending 90 degrees, front-pushing middle lead, three leads bending 90 degrees with ...

Brand Name:Infineon Technologies

Model Number:IPD060N03LGATMA1

Field Effect Transistor Chip Discrete Semiconductors Circuit protection IPD060N03LGATMA1 Product range OptiMOSª3 Power-Transistor,MOSFET N-CH 30V 50A TO-252 Basic data Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS...

Brand Name:GS

Model Number:Tube feeder

Place of Origin:China

Tube feeder(MOS Tube Bending/Cutting Foot) [Customized Version] If there are special material dimensions, you can contact our company for consultation and to provide solutions and customize exclusive feeders.

Brand Name:INFINEON

Model Number:IRF3205PBF

Place of Origin:GERMANY

Brand Name:IRIS

Model Number:15KW

Place of Origin:China

15KW 2KG Mini Electric Induction Gold Melting Furnace 15KW 2KG Mini Electric Induction Gold Melting Furnace is widely used in small capacity melting. The furnace is small in size, light in weight, convenient to move, and has a small footprint. It uses the ...

Brand Name:ROHM Semiconductor

Model Number:DTC123YUAT106

Place of Origin:CHINA

...Transistors Digital BJT NPN 50V 100mA 200mW 3-Pin DTC123YUAT106 DTC123YUA Series 50 V 100 mA Surface Mount NPN Digital Transistor - SC-70 Related product number: Mfr Part # Description Package DTC123EM3T5G TRANS PREBIAS NPN 50V SOT723 SOT-723 DTC123JET1G TRANS PREBIAS NPN 50V 100MA SC75 SC-75, SOT-416 DTC123JM3T5G TRANS PREBIAS NPN 50V SOT723 SOT-723 DTC123YCAT116 NPN 100MA 50V DIGITAL TRANSISTOR...

Brand Name:Hua Xuan Yang

Model Number:3403D-U-V

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature 30V/100A R DS(ON) = 2.4mΩ(typ.) @V GS = 10V R DS(ON) = 2.9mΩ(typ.) @V GS = 4.5V 100%

Brand Name:Hua Xuan Yang

Model Number:G170C03LR1S

Place of Origin:ShenZhen China

..., especially as switches. Variant s include planar MOSFETs, VMOS, UMOS TrenchMOS, HEXFETs and other different brand names. Mos Field Effect Transistor Feature N- Channel P - Channel Vds = 30V Vds = -30V 9.5 A (Vgs= 10V) - 8 A (Vgs= -10V) 12.9 mΩ

Brand Name:ROHM

Model Number:2SD2227S

Place of Origin:JAPAN

...Transistors General Purpose Transistor 50V 0.15A MEDIUM POWER TRANSISTOR(25V, 1.2V), GENERAL PURPOSE TRANSISTOR(50V, 0.15A) Features 1) High DC current gain. 2) High emitter-base voltage. (VCBO=12V) 3) Low saturation voltage. (Typ. VCE(sat)=0.3V at IC/IB=50mA/5mA) Product Attribute Attribute Value Mounting Style: SMD/SMT Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 50V...

Brand Name:TOSHIBA

Model Number:TK13A60D

Place of Origin:Original

... Transistor 13A 600V 0.33 Ohm N-Channel MOS TOSHIBA Field Effect Transistor Silicon N Channel MOS Type Applications Switching Voltage Regulators Description Toshiba π-MOS VII MOSFETs are 10V Gate Drive, single N-channel devices, combining π-MOS ...

Brand Name:Original

Model Number:MMUN2214LT1G

Place of Origin:Original

...Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN IC PRODUCT DESCRIPTION Bipolar Transistors - Pre-Biased 100mA 50V BRT NPN PRODUCT PROPERTIES Manufacturer: onsemi Product Category: Bipolar Transistors - Pre-Biased Configuration: Single Transistor ...

Model Number:PIMN31

Place of Origin:Malaysia

...MOS gated high voltage switching IGBT family. IGBTs combine the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The IGBT used is the development ...