55v high power transistor

Brand Name:Original brand

Model Number:IRFR024NTRPBF

Place of Origin:Original Factory

...HIGH POWER TRANSISTOR IRFR024NTRPBF D- PAK N- CHANNEL 55V 17A 45W Detailed Product Description FET Type: N-Channel Operating Temperature: -55°C ~ 175°C Moisture Sensitivity Level (MSL): 1 (Unlimited) Lead Free Status / RoHS Status: Lead Free / RoHS Compliant High Light: high power mosfet transistors , n channel mosfet transistor IRFR024NTRPBF D-PAK N-Channel 55V...

Brand Name:IOR

Model Number:IRFR024NTRPBF

Place of Origin:CHINA

IRFR024NTRPBF D-PAK N-Channel 55V 17A 45W Surface Mount RoHS Compliant Feature l Ultra Low On-Resistance l Surface Mount (IRFR024N) l Straight Lead (IRFU024N) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated FET Type N-Channel ...

Brand Name:Hua Xuan Yang

Model Number:30P06D TO-252

Place of Origin:ShenZhen China

...High Power Transistor , Custom Field Effect Transistor High Power Transistor DESCRIPTION The 30P06D uses advanced trench technology to provide excellent R DS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. High Power Transistor GENERAL FEATURES V DS =- 60V,I D =-30A R DS(ON) < 40mΩ @ V GS =-10V R DS(ON) < 55mΩ @ V GS =-4.5V High Power...

Brand Name:Hua Xuan Yang

Model Number:G045P03LQ1C2

Place of Origin:ShenZhen China

...Transistor ,High Power Transistor -30V/-80A N Channel Mos Field Effect Transistor Description -30V/-80A R DS(ON) = 3.8 mΩ (typ.) @V GS = -10V R DS(ON) = 6.2 mΩ (typ.) @V GS = -4.5V 100% Avalanche Tested Reliable and Rugged Halogen- Free Devices Available N Channel Mos Field Effect Transistor Applications Switching Application Power...

Brand Name:ON

Model Number:FDA59N30

Place of Origin:Original

... stripe,DMOS technology.This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well

Brand Name:Original brand

Model Number:STO33N60M6

Place of Origin:Original

...Power Transistor STO33N60M6 MOSFET N-channel 600 V, 105 mOhm typ., 26 A Feature • Reduced switching losses • Lower RDS(on) per area vs previous generation • Low gate input resistance • 100% avalanche tested • Zener-protected • High creepage package • Excellent switching performance thanks to the extra driving source pin Applications • Switching applications • LLC converters • Boost PFC converters Categories Mosfet Power Transistor

Place of Origin:Japan

Brand Name:MITSUBISHI

Model Number:QM10HB-H

...HIGH POWER TRANSISTOR INSULATED TYPE. Part NO: QM10HB-H Brand: MITSUBISHI Date Code: 02+ Quality Warranty: 3 Months Mounting Type: Screws Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power...

Brand Name:NEC

Model Number:2SC2987

Place of Origin:JAPAN

2SC2987 NPN PNP Transistors Silicon NPN Power Transistors DESCRIPTION ·With TO-3PN package ·Complement to type 2SA1227 ·High power dissipation APPLICATIONS ·For audio frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2Collector;...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Reliable High Power Semiconductor with Extremely Low Reverse Recovery Current *, *::before, *::after {box-sizing: border-box;}* {margin: 0;}html, body {height: 100%;}body {line-height: 1.5;-webkit-font-smoothing: antialiased;}img, picture, video, canvas, ...

Brand Name:ANTERWELL

Model Number:2SK2968

Place of Origin:Japan

...HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE) High Speed High Voltage Switch Aplication DC-DC Coverter Relay Drive and Motro Drive Aplication Application High speed power switching Features • Low on-resistance • High speed switching • Low drive current • 4 V gate drive device  Can be driven from 5 V source • Suitable for motor drive, DC-DC converter, power...

Place of Origin:USA

Brand Name:IR

Model Number:AUIPS7145RTR

Field Effect Transistor AUIPS7145RTR NEW AND ORIGINAL STOCK [Who we are?] Founded in 1998, Shenzhen CM GROUP Electronic Technology Co., Ltd.is a professional electronic marketing corporation entirely engaged in the fields of semi-conductors and electronic ...

Brand Name:VBE

Model Number:VBE09260B2

Place of Origin:CHINA

Model Number:KSE13009I

Place of Origin:Original

Brand Name:Original

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Brand Name:Infineon

Model Number:IRFR5305TRPBF

Place of Origin:Original Factory

... to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® Power MOSFETs are well known for, provides the designer with an extremely efficient and

Place of Origin:China

Brand Name:ONSEMI

Model Number:HUF75321D3ST

... in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a

Brand Name:onsemi

Model Number:NTMFS4C55NT1G

Place of Origin:original

ON Semiconductor NTMFS4C55NT1G MOSFET Power Transistor 4A 55V N-Channel Ultra-Low On-Resistance FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 11.9A (Ta), 78A (Tc) Drive Voltage...

Place of Origin:US

Brand Name:Original

Model Number:IRFZ44NPBF

...55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 mOhm @ 25A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1470pF @ 25V Power ...

Brand Name:GBS

Model Number:GBS-LFP60Ah

Place of Origin:CHINA

High power 60Ah lithium battery 48V for AGV vehicle robot GBS-LFP60Ah Item Specification Remark Rated capacity 60Ah 0.2C rate discharge capacity Minimum capacity 60Ah Internal impedance ≤0.7mΩ Nominal voltage 3.2V Cell weight 2.0±0.1KG Standard discharge conditions Constant current 30A End-of-discharge voltage 2.5V Standard charge method Constant current 15A Charge voltage 3.55V Fast charge method Constant current 60A Charge voltage 3.55V...

Brand Name:Diodes Incorporated

Model Number:BS816A-1

Place of Origin:USA

...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor technology ● High power