5ghz rf power transistor

Brand Name:Analog Devices Inc.

Model Number:ADF5901WCCPZ

Place of Origin:Multi-origin

... • High Gain: 17.9dB @ 2.5GHz • High Efficiency: > 65% @ 2.5GHz • Low Quiescent Current: <100mA • RoHS Compliant • Package: 46-lead, 4mm x 6mm LFCSP Why buy from us >>> Fast / Safely / ...

Place of Origin:JAPAN

Brand Name:FUJITSU

Model Number:FMM5832VY

FMM5832VY is a 27.5-31.5GHz Power Amplifier MMIC. Part NO: FMM5832VY Brand: FUJITSU Date Code: 0228+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High frequency microwave devices: These products...

Brand Name:VBE

Model Number:VBP7-10GL

Place of Origin:China

... power amplifier(PA),low noise amplifier(LNA), Radio Frequency outdoor unit(ODU) and customized radio frequency module ...

Brand Name:Mitsubishi

Model Number:RD06HVF1

Place of Origin:CN

... applications FEATURES of RD06HVF1 High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz APPLICATION of RD06HVF1 For output stage of high power amplifiers in VHF band mobile radio sets. List Of Other Electronic Components In Stock PART NUMBER MFG/BRAND 　

Brand Name:Sinoscite

Model Number:SNSD-208-010265

Place of Origin:Sichuan, China

... quality, Low price, Fast delivery. 4.Custom design available upon request. 5.Competitive price. 6. High powercapacity,. excellent isolation. Rf Power Divider quick detalis: Place of Origin:Sichuan, China Brand Name:Sinoscite Model Number:BJ320(WR28)

Brand Name:INNOTION

Model Number:YP01401650T

Place of Origin:Jiangsu, China

...RF Power Transistor Product Description Innotion’s YP01401650T is a 50-watt, unmatched gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities with frequency up to 4000MHz. The transistor...

Brand Name:Semelab / TT Electronics

Model Number:D2085UK

Place of Origin:UK

...RF POWER TRANSISTOR MOSFET Manufacturer: TT Electronics Product Category: TT Electronics Brand: Semelab / TT Electronics The D2085UK is a push-pull RF power transistor MOSFET that operates at a voltage of 28V and can handle a power output of 120W. It is designed for use in the frequency range of 1MHz to 1000MHz. Silicon MOSFET: MRF140: RF MOSFET Line, 30W, up to 400MHz, 28V [1] MRF134: Broadband RF Power

Brand Name:Original brand

Model Number:STWA65N60DM6

Place of Origin:Original

Mosfet Power Transistor STWA65N60DM6 Mosfet N-channel 600 V, 0.084 Ohm typ., 30 A MDmesh DM6 Power TO-247 Feature • Extremely low RDS(on)*area and Qg and optimized capacitance profi le for light load conditions • Extremely ...

Brand Name:Texas Instruments

Model Number:PD85035S-E

Place of Origin:Malaysia

PD85035S-E PD85035STR-E PD85035-E RF power transistor MOSFETS The PD85035-E is a common source N-channel,enhancement-mode lateral field-effect RF power transistor. It is designed for high gain, broadband commercial and industrial applications. It operates...

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPD1035

QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ...

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...

Brand Name:RY

Model Number:RY-051002

Place of Origin:China

...used for RF signal power detection, with a detection frequency range of 0.1-2.4GHz. It can detect a RF signal with a power range of -72dBm to -2dBm, and convert such RF signal into a DC voltage output. The larger the amplitude or power of the RF signal...

Brand Name:Hua Xuan Yang

Model Number:AOD442

Place of Origin:ShenZhen China

AOD442/AOI442 60V N-Channel MOSFET General Description The AOD442/AOI442 used advanced trench technology to provide excellent R DS(ON) and low gate charge. Those devices are suitable for use as a load switch or in PWM applications. Parameters Part Number ...

Model Number:SD1480

Place of Origin:Malaysia

Brand Name:KAIGENG

SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Model Number:2SK4115

Place of Origin:Guangdong, China

Brand Name:ALL BRAND

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Brand Name:Hincn

Model Number:HCP2-4040

Place of Origin:China

...5GHz Band Bidirectional RF Power Amplifier Module Brief Introdcution: Time-division frequency-sharing networking with low-noise amplifier, 2W, 5W, 10W digital power amplifier modules. Size is 40*40*12mm, suitable for connecting with our TDD wireless video data transmitter to increase power and achieve long-distance transmission. Specifications: Model number: HCP2-4040 Product name:TDD COFDM Bidirectional RF Power

Brand Name:SWT

Model Number:SW-PA-1375014500-50C

Place of Origin:China

... signals within the frequency range of 13.75GHz to 14.5GHz, specifically targeting the Ku band. Below are the detailed specifications and features of this power amplifier: Frequency Range: This power amplifier is suitable for amplifying signals across the

Brand Name:original

Model Number:M68702H

Place of Origin:Original Manufacturer

...RF POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power module transistor...

Brand Name:TeXin

Model Number:TX-5.8G100W

Place of Origin:Shenzhen,China

...frequency technology .The bandwidth is flat, the wattage is sufficient, and it supports 24-28V power supply. It has good effect and high efficiency, and is a cost-effective product. Factory direct manufacturing, full frequency band customization ...