6 8a p channel power mosfet

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMA530PZ

High Power MOSFET FDMA530PZ P-Channel PowerTrench^® MOSFET-30V, -6.8A, 35mΩ High Power MOSFET FDMA530PZ P-Channel PowerTrench® MOSFET-30V, -6.8A, 35mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing...

Brand Name:Original Factory

Model Number:MSC360SMA120B

Place of Origin:CN

... Drain Source Voltage: 1200V Continuous Drain Current At TC = 25 °C: 11A Continuous Drain Current At TC = 100 °C: 8A Pulsed Drain Current: 28A Linear Derating Factor: 0.52W/°C Functional Diagram Of

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

.... The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=

Brand Name:JUYI

Model Number:JY8N5M

Place of Origin:China

...8A N Channel Enhancement Mode Power MOSFET GENERAL DESCRIPTION The product utilizes the advanced planar processing techniques to achieve the highcell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. FEATURES ● 500V/8A...

Brand Name:Infineon Technologies

Model Number:SPD08P06PGBTMA1

Place of Origin:Multi-origin

This listing is for a SPD08P06PGBTMA1 MOSFET Power Electronics. This MOSFET is a logic level N-channel enhancement mode power field-effect transistor and has the following parameters: Type: MOSFET Power Electronics Part Number: SPD08P06PGBTMA1 Voltage: 8 V...

Brand Name:Anterwell

Model Number:AON7403

Place of Origin:original factory

AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load ...

Brand Name:juyi

Model Number:JY8N5M

Place of Origin:China

General Description: The product utilizes the advanced planar processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and ...

Model Number:AON7403

Place of Origin:original factory

AON7403 P-Channel Enhancement Mode Field Effect Transistor General Description The AON7403/L uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load ...

Brand Name:Toshiba

Model Number:CUS08F30

Place of Origin:China

CUS08F30 andnbsp; 1. Applications andbull; High-Speed Switching 2. Features (1) Low forward voltage: VF(3) = 0.40 V (typ.) (2) General-purpose USC package, equivalent to SOD-323 and SC-76 packages. 3. Packaging and Internal Circuit Type Description Select...

Place of Origin:US

Brand Name:Original

Model Number:IRF840

...Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 8A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 850mOhm @ 4.8A, 10V Vgs(th) (Max) @ Id 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 63nC @ 10V Vgs (Max) ±20V Input Capacitance (Ciss) (Max) @ Vds 1300pF @ 25V Power...

Brand Name:VISHAY

Model Number:SI4484EY-T1-E3

Place of Origin:CHINA

...Channel MOSFET 100V 4.8A (Ta) 1.8W (Ta) Surface Mount FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.8A (Ta) Drive Voltage (Max Rds On, Min Rds On) 6V, 10V Rds On (Max) @ Id, Vgs 34mOhm @ 6.9A, 10V Vgs(th) (Max) @ Id 2V @ 250µA (Min) Gate Charge (Qg) (Max) @ Vgs 30nC @ 10V Vgs (Max) ±20V FET Feature - Power...

Brand Name:STMicroelectronics

Model Number:VN5160STR-E

VN5160STR-E IC PWR DRIVER N-CHANNEL 1:1 8SO STMicroelectronics Product Details STMicroelectronics' VN5160STR-E is a high-performance smart power MOSFET driver for driving high-power N-channel external MOSFETs. It has built-in high-current terminals to ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:5G03SIDF

...Channel Enhancement Mode MOSFET Description The 5G03S/DF uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications General Features N-Channel VDS = 30V,ID =8A RDS(ON) < 20m Ω@ VGS=10V P-Channel VDS = -30V,ID = -6.2A RDS(ON) < -50mΩ@ VGS=-10V Application Power...

Brand Name:TOSHIBA

Model Number:TK39A60W,S4VX

Place of Origin:Original

... epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages. This helps to

Place of Origin:Original

...Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30V Current - Continuous Drain (Id) @ 25°C 2.8A (Ta) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 1.4V @ 250µA Gate Charge (Qg) (Max) @ Vgs 6.7nC @ 10V Input Capacitance (Ciss) (Max) @ Vds 285pF @ 15V Vgs (Max) - FET Feature - Power Dissipation (Max) 1.4W (Ta) Rds On (Max) @ Id, Vgs 120 mOhm @ 2.8A...

Brand Name:Diodes Incorporated

Model Number:DMP6050SFG-13

Place of Origin:USA

...Channel 60 V 4.8A (Ta) 1.1W (Ta) Surface Mount PowerDI3333-8 Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.  Backlighting  Power...

Categories:Onsemi Ic

Country/Region:china

...Power MOSFET: NCV20081SN3T1G The NCV20081SN3T1G Power MOSFET from ON Semiconductor delivers industry-leading efficiency in an microscopic SON package. As an 8A N-channel MOSFET optimized for ultra-dense motor control designs, it maximizes current in the most stringent size constraints. Key Features: 30V voltage rating 8A...

Brand Name:Texas Instruments

Model Number:UCC27712DR

UCC27712DR DrivenConfiguration Half-Bridge ChannelType Independent NumberofDrivers 2 GateType IGBT, N-Channel, P-Channel MOSFET Voltage-Supply 10V ~ 20V LogicVoltage-VILVIH 1.5V, 1.6V Current-PeakOutput(SourceSink) 1.8A, 2.8A InputType - HighSideVoltage-...

Brand Name:original

Model Number:LN2302LT1G

...8A, 60mΩ@4.5V, function and pin are the same as SI2302 4. N-channel 20V 2.3A Technological Parameters: Drain-source resistance 0.06 Ω polarity N threshold voltage 0.6 V Drain-Source Voltage (Vds) ...

Categories:Single FETs, MOSFETs

Country/Region:china

N-Channel 100 V 24.8A (Tc) 85W (Tc) Surface Mount LFPAK56, Power-SO8