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All 600v through hole transistor wholesalers & 600v through hole transistor manufacturers come from members. We doesn't provide 600v through hole transistor products or service, please contact them directly and verify their companies info carefully.
| Total 81 products from 600v through hole transistor Manufactures & Suppliers |
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Model Number:2SC4468 Place of Origin:Guangdong, China Brand Name:original ...transistor TO-3-3 Products Description: 1. TO-3P NPN 140V 10A 2. 2SC4468 bipolar transistor 3. Bipolar(BJT)Transistor NPN 140v 10a 20 MHz 100W Through Hole to-3p 4. Trans GP BJT NPN 140V 10A 3-pin(3+Tab) Technological Parameters: frequency 20 MHz Dissipation power 100 W polarity NPN installation Through Hole... |
Shenzhen Res Electronics Limited
Guangdong |
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Place of Origin:US Brand Name:Original Model Number:BTA41-600B ...600V Current - On State (It (RMS)) (Max) 25A Voltage - Gate Trigger (Vgt) (Max) 1.3V Current - Non Rep. Surge 50, 60Hz (Itsm) 250A, 260A Current - Gate Trigger (Igt) (Max) 50mA Current - Hold (Ih) (Max) 80mA Configuration Single Operating Temperature -40°C ~ 125°C (TJ) Mounting Type Through Hole |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Brand Name:Original Factory Model Number:IPDQ60R022S7A Place of Origin:CN Integrated Circuit Chip IPDQ60R022S7A N-Channel 600V 24A 416W Transistors Product Description Of IPDQ60R022S7A IPDQ60R022S7A technology enables best in class RDs(on) in smallest footprint.Kelvin Source pin improves ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:onsemi Model Number:FCH165N60E Place of Origin:original FCH165N60E MOSFET Power Electronics TO-247-3 600V N-Channel Transistor Efficiency Losses Switching Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600 V Current - Continuous Drain (Id) @ 25°C 23A (Tc) Drive ... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:Upperbond Model Number:Maker Place of Origin:China ... are one of the basic building blocks of modern electronics. It is composed of semiconductor material usually with at least three terminals for connection to an external circuit. 1. Bipolar Junction Transistors The first bipolar junction transistors were |
HK UPPERBOND INDUSTRIAL LIMITED
Hong Kong |
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Brand Name:Huixin Model Number:MUR1060CT TO-220AB Place of Origin:China Through Hole 3Pin TO - 220AB Ultra Fast Recovery Diodes 10A 600V MUR1010CT-MUR1060CT TO-220AB Datasheet.pdf Features: Low forward voltage drop High current capability High reliability ... |
Guangdong Huixin Electronics Technology Co., Ltd.
Guangdong |
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Brand Name:Diode Triode Transistor Model Number:IRFP90N20D Place of Origin:USA ...Transistor Diode Triode Bom Service T IGBT Field Stop 600V 120A 378W TO247 IRFP90N20D Product Paramenters Manufacturer: Standard Packaging: Tube Product Category: MOSFET Brand: standard RoHS: Details Configuration: Single Technology: Si Fall Time: 77 ns Mounting Style: Through Hole Height: 16.3 mm Package / Case: TO-220-3 Length: 10.67 mm Transistor... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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Brand Name:IR Model Number:IRFPC50PBF Place of Origin:CN IRFPC50PBF N-Channel MOSFET TRANSISTOR 600V 11A (Tc) 180W (Tc) Through Hole TO-247-3 FEATURES • Dynamic dV/dt Rating • Repetitive Avalanche Rated • Isolated Central Mounting Hole • Fast Switching • Ease of Paralleling • Simple Drive ... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:onsemi Model Number:FGH20N60SFDTU Place of Origin:Original FGH20N60SFD IGBT Power Transistors 600V 20A Field Stop 165W Through Hole Description Using Novel Field Stop IGBT Technology, ON Semiconductor’s new series of Field Stop IGBTs offer the optimum performance for Automotive Chargers, Inverter, and other ... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:FSC Model Number:FDPF10N60NZ Place of Origin:CHINA ... dv/dt Capability • ESD Improved Capability • RoHS compliant Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Brand Name:Bourns Model Number:BIDW30N60T ...technology from a MOSFET gate and a bipolar transistor and are designed for high voltage/high current applications. The Model BID IGBTs use advanced Trench-Gate Field-Stop ... |
HongKong Wei Ya Hua Electronic Technology Co.,Limited
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Brand Name:To shi ba Model Number:TK8A60DA(STA4,Q,M) Place of Origin:Shenzhen, China ...600V 7.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube Technical Attributes : Description Value Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 7.5 A Maximum Drain Source Voltage 600 V Maximum Gate Source Voltage ±30 V Mounting Through Hole... |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:FAIRCHILD Model Number:SSS7N60B Place of Origin:Original .../dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:Infineon Model Number:IKW50N60TFKSA1 IGBT Transistors LOW LOSS DuoPack 600V 50A Product Attribute Attribute Value Select Attribute Manufacturer: Infineon Product Category: IGBT Transistors RoHS: Details Technology: Si Package / Case: TO-247-3 Mounting Style: Through Hole Configuration: Single... |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Place of Origin:Original ... (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7A Rds On (Max) @ Id, Vgs - Vgs(th) (Max) @ Id - Gate Charge (Qg) (Max) @ Vgs - Input Capacitance (Ciss) (Max) @ Vds - Power - Max - Operating Temperature - Mounting Type Through Hole Package / Case... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Brand Name:Hua Xuan Yang Model Number:5N20DY TO-252 Place of Origin:ShenZhen China ...Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other Mosfet Power Transistor General Features V DS =200V,I D =5A R DS(ON) <520mΩ @ V GS =4.5V Mosfet Power Transistor... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:original Model Number:SIHB22N60E-E3 Place of Origin:Original Manufacturer ...TRANSISTOR SIHB22N60E - E3 600V 21A PACKAGE D2PAK FET Type: N-channel Operating Temperature: -55°C ~ 150°C (TJ) Package: TO263-3 D2PAK High Light: n channel mosfet transistor , n channel transistor High Voltage Single Mosfet Power Transistor SIHB22N60E - E3 600V... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Brand Name:ON/Fairchild Model Number:G40N60UFD Place of Origin:Original Factory G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:Toshiba Model Number:2SC5200-O(Q) Place of Origin:JP ...: TO-3P-3 Transistor Polarity: NPN Configuration: Single Collector- Emitter Voltage VCEO Max: 230 V Collector- Base Voltage VCBO: 230 V ... |
Wisdtech Technology Co.,Limited
Guangdong |
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Brand Name:PEAKMETER Model Number:PM2108A Place of Origin:China ...: 30 min Unit indication: function and unit Specifications Range Accuracy DC Voltage 400mV ±(1.0%+2) 4V/40V/400V ±(0.8%+3) 600V ±(1.0%+5) AC Voltage 4V/40V/400V ±(0.8%+3) 600V ±(1 |
Guilin Huayi Peakmeter Technology Co., Ltd.
Guangdong |