650v insulated gate bipolar transistor

Brand Name:ST

Model Number:STGW80H65DFB

Place of Origin:Original

... Insulated Gate Bipolar Transistor 650V 80A 469W IGBT Transistors Applications • Photovoltaic inverters • High frequency converters Specifications Product Attribute Attribute Value Manufacturer: STMicroelectronics Product Category: IGBT Transistors ...

Brand Name:Lingxun

Place of Origin:China

... in high voltage and high power applications. With a wide range of voltage rating from 650V to 1200V, this device is capable of delivering exceptional power output, allowing it to handle the most demanding tasks with ease. One of the key features of this

Brand Name:General Electric

Model Number:DS200IIBDG1AEA

Place of Origin:United States

... that provide a status of the processing of the board. The LEDs are visible from the interior of the circuit board cabinet and are red in color when lit. The GE Insulated Gate Bipolar Transistor (IGBT) Board DS200IIBDG1A has several connectors and when you

Brand Name:KRUNTER

Model Number:KUP40H12R4-7M

Place of Origin:CHINA

...Gate Bipolar Transistor Assembly The Ultimate Solution for Power Management Product Description: The Insulated Gate Bipolar Transistor Module, commonly known as IGBT Module, is a crucial component in electronic circuits, offering efficient power control and switching capabilities. This versatile module combines the features of an Insulated Gate Transistor...

Brand Name:ON/Fairchild

Model Number:G40N60UFD

Place of Origin:Original Factory

G40N60UFD Ultra fast IGBT Transistor N-Channel with Built in Diode 600V 40A 160W, TO-3P Descriptions: Fairchild's UFD series of Insulated Gate Bipolar Transistors (IGBTs) provides low conduction and switching losses. The UFD series is designed for ...

Model Number:MGW12N120D

Place of Origin:original factory

... Bipolar Transistor (IGBT) is co–packaged with a soft recovery ultra–fast rectifier and uses an advanced termination scheme to provide an enhanced and reliable high ...

Brand Name:TOSHIBA

Model Number:GT20J101

Place of Origin:CHINA

...) = 2.7 V (max) Characteristic Symbol Rating Unit Collector-emitter voltage VCES 600 V Gate-emitter voltage VGES +-20 V Collector current DC IC 20 A Collector current 1 ms ICP 40 A Collector ...

Brand Name:Anterwell

Model Number:GP4068D

Place of Origin:original factory

IRGP4068DPbF IRGP4068D-EPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRA-LOW VF DIODE FOR INDUCTION HEATING AND SOFT SWITCHING APPLICATIONS Features • Low VCE (ON) Trench IGBT Technology • ...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: High Power IGBT is a type of high power bipolar transistor, specifically a type of insulated-gate bipolar transistor (IGBT). It is an advanced semiconductor device with an excellent combination of low conduction losses, high switching ...

Brand Name:Lite-On Inc.

Model Number:LTV-356T-D

Place of Origin:original

...Insulated Gate Bipolar Transistor (IGBT) Driver Product: LTV-356T-D Power Isolator IC Features: • Maximum working voltage: 50V • Maximum output current: 1.5A • Operating temperature range: -40°C to +85°C • Lead-free and RoHS compliant • Low power consumption • High efficiency • Low EMI • High temperature stability • High reliability and long term durability • Excellent electrical insulation...

Brand Name:GE

Model Number:DS200IPCSG2A

Place of Origin:USA

DS200IPCSG2A GE Insulated Gate Bipolar Transistor P3 Snubeer Board DIN-rail Mounting Turbine Control System Series Product Details: Brand Name GE Model DS200IPCSG2A Condition ...

Brand Name:Infineon Technologies

Model Number:IKWH50N65WR6XKSA1

IKWH50N65WR6XKSA1 IGBT Transistors HOME APPLIANCES 14 Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs Infineon Technologies TRENCHSTOP™ 5 Reverse Conducting IGBTs are optimized for full-rated hard switching turn off typically found in welding ...

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

PRODUCT DESCRIPTION Lastest Non Isolated IGBT Insulated Gate Bipolar Transistor Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply ...

Brand Name:ABB

Model Number:FS450R17KE3/AGDR-71C S

Place of Origin:SWEDEN

Product Description ABB FS450R17KE3/AGDR-71C S DCS INSULATED GATE BIPOLAR TRANSISTOR MODULE Technical Application *Decentralized control system *Turbine control, monitoring and protection system *Real-time information management and optimization system *...

Place of Origin:Original

Brand Name:Microsemi Corporation

Model Number:APT50GT60BRDQ2G

APT50GT60BRDQ2G IGBT Power Module Transistors IGBTs Single APT50GT60BRDQ2G Specifications Part Status Active IGBT Type NPT Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 110A Current - Collector Pulsed (Icm) 150A Vce(on) (...

Brand Name:ZFeng

.gtr-container { font-family: 'Arial', sans-serif; color: #333; line-height: 1.6; max-width: 1000px; margin: 0 auto; padding: 20px; background-color: #fff; border: 1px solid #e0e0e0; box-shadow: 0 2px 5px rgba(0,0,0,0.05); } .gtr-heading { font-weight: 700...

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

Place of Origin:N/S

IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating ...

Categories:IGBT Modules

Country/Region:china

IGBT Module Trench Single 1200 V 139 A 658 W Chassis Mount SOT-227

Brand Name:Original Factory

Model Number:IMW65R072M1H

Place of Origin:CN

...650V 26A Through Hole Transistors Product Description Of IMW65R072M1H IMW65R072M1H have excellent hard commutation robustness, enabling usage in resonant topologies. Specification Of IMW65R072M1H Part Number: IMW65R072M1H Driving Voltage: 0V-18V Lower Switching Losses: 4 Times Gate Charge: 35 NC Gate...

Brand Name:GE

Model Number:DS200IIBDG1AEA

Place of Origin:US

...Gate Driver Board Product Details: The GE DS200IIBDG1AEA is an IGBT (Insulated Gate Bipolar Transistor) Driver Board designed for drive control systems, specifically GE’s Mark V Series. As a revised version of the parent DS200IIBDG1 board (with three significant product updates), its core role is to deliver precise control signals—typically pulse-to IGBT gate...