650v super junction mosfet

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...Super Junction MOSFET is a power discrete device for LED Driver, PFC Circuit, Switching Power Supply, UPS Of Continuous Power Supply System, and New Energy Power Equipment. It is made by Multi-layer Epitaxy Process, which has excellent Anti EMI and Anti Surge Capabilities compared to Trench Process. It features an ultra-low Junction Capacitance and an ultra small package. Therefore, it is the ideal choice for SJ MOSFET, Super

Brand Name:Infineon

Model Number:SPA04N80C3XKSA1

Place of Origin:China

SPA04N80C3XKSA1 Power MOSFET 800V Ultra-High Voltage 4A Current Low Rds(on) Super Junction Technology Low Gate Charge High Efficiency Halogen-Free Robust Performance for SMPS andamp; Industrial Drives andnbsp; ...

Brand Name:Original Factory

Model Number:IPP65R099CFD7AAKSA1

Place of Origin:CN

...650V 24A Single MOSFETs Transistors Product Description Of IPP65R099CFD7AAKSA1 IPP65R099CFD7AAKSA1 provides for an integrated fast body diode and can be used for PFC and resonant switching topologies like the ZVS phase-shift fll-bridge and LLC. Specification Of IPP65R099CFD7AAKSA1 Part Number IPP65R099CFD7AAKSA1 Technology MOSFET...

Model Number:KIA4N65

Brand Name:Original

Place of Origin:US

Product Description Technology MOSFET Voltage 650V Mounting Type Through Hole Package TO-220F Yonlanda Skype: qyt-yolanda1 Email: yonlandasong(at)quanyuantong.net

Brand Name:Original brand

Model Number:NVHL040N65S3F

Place of Origin:Original

... to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is

Categories:PMIC Chip

Country/Region:china

... of high voltage Super Junction MOSFET with FRD 600V 70A 41mΩ Si Super junction MOSFET with Fast Recovery Diode Applications: Solar inverters • LCD/LED/PDP TV • Telecom/Server Power supplies • AC-...

Brand Name:HT

Model Number:F7N65L TO-220F-3L

Place of Origin:China

...MOSFET 7A 650V Applications In Switching Power Supplies And Adaptors 7A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET...

Categories:Transistors - FETs, MOSFETs - RF

Country/Region:china

... to the data sheet, such as PDF files Docx documents, etc. We have 0912GN-650V high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Brand Name:SAIKELI

Model Number:STD6N95K5

Place of Origin:China

STB57N65M5 D2PAK MOSFET N channel 650V 42A Description: Type: N-channel drain source voltage (Vdss): 650V continuous drain current (Id): 42A power (Pd): 250W conduction resistance (RDS (on) @ Vgs, Id): 63m Ω @ 10V, 21A threshold voltage (Vgs (th) @ Id): 5V...

Place of Origin:China

Brand Name:ONSEMI

Model Number:NVH4L027N65S3F

High Power MOSFET NVH4L027N65S3F SUPERFET III MOSFET 650V 27mohm [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new...

Brand Name:Anterwell

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching ...

Brand Name:TOSHIBA

Model Number:TK35N65W

Place of Origin:Original Factory

...-of-the-art single epitaxial process, which provides a 30% reduction in RDS(on), a figure of merit (FOM) for MOSFETs, compared to its predecessor, DTMOSIII. This reduction in the RDS(on) makes it possible to house lower RDS(on) chips in the same packages.

Brand Name:INFINEON

Model Number:IPW65R080CFDA

INFINEON Chip IPW65R080CFDA MOSFET N-CH 650V 43.3A TO247-3 Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel ...

Model Number:TK10P60W

Place of Origin:original factory

MOSFETs Silicon N-Channel MOS (DTMOS) TK10P60W Applications • Switching Voltage Regulators Features (1) Low drain-source on-resistance: RDS(ON) = 0.327 Ω (typ.) by used to Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) ...

Brand Name:Infineon Technologies

Model Number:SPW47N60C

Place of Origin:USA

Manufacturer: Infineon Product Category: MOSFETs RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-247-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 600 V Id - Continuous ...

Brand Name:Infineon Technologies

Model Number:SPW35N60C3

... low effective capacitances Improved transconductance Basic Data Product Attribute Attribute Value Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case:

Brand Name:INFINEON

Model Number:SPW47N60C3

Place of Origin:CHIAN

SPW47N60C3 MOSFET N-Ch 650V 47A TO247-3 CoolMOS C3 1.Feature Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances 2.Definition of diodes switching characteristics

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 50 V 100 mA 960MHz ~ 1.215GHz 18dB 650W 55-KR

Brand Name:Hua Xuan Yang

Model Number:HXY4409

Place of Origin:ShenZhen China

... application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.