65v npn general purpose transistors

Brand Name:Original

Model Number:BC846

...=1J; BC848B=1K: BC848C=1L ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise specified) Data Type BJT Series NPN Vceo 65V Ic 100mA Pd 200mW Part

Brand Name:Nexperia

Model Number:BC846B

Place of Origin:China

... NPN General Purpose Transistor 65V 100mA SOT-23 Package Low Noise High Current Gain 200-450 250MHz Frequency Dual/Single Options RoHS Compliant Tape andamp; Reel andnbsp; Features Cuses Cu bond wires All other grades: Au bond wires General Purpose Thr...

Brand Name:Nexperia

Model Number:BC817-40

Place of Origin:USA

BC817-40 NPN general purpose transistor 500mA 45V SOT23 FEATURES • High current (max. 500 mA) • Low voltage (max. 45 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN transistor in a SOT23 plastic package. PNP complement...

Brand Name:Original

Model Number:BC846

...NPN通用晶体管SOT23塑封晶体管 BC846 TRANSISTOR (NPN) BC847 BC848 FEATURES *Ideally suited for automatic insertion *For switching and AF amplifier applications DEVICE MARKING BC846A=1A; BC846B=1B; BC847A=1E; BC847B=1F; BC847C=1G; BC848A=1J; BC848B=1K: BC848C=1L ELECTRICAL CHARACTERISTICS (Ta=25°C unless otherwise specified) Data Type BJT Series NPN Vceo 65V...

Brand Name:ISC

Model Number:2N6038

Place of Origin:Philippines

Silicon Power npn general purpose transistor 2N6038 TO -126 package DESCRIPTION ·With TO-126 package ·Complement to type 2N6034/6035/6036 ·DARLINGTON ·High DC current gain APPLICATIONS ·Designed for general-purpose amplifier and low-speed switching ...

Brand Name:IXYS

Model Number:IXTH200N10T

Place of Origin:Original Factory

General Purpose Transistor IXTH200N10T 200A 100V 5.4 Rds 550W Dc-Dc Converters Description Single MOSFET Die,N-Channel Enhancement Mode ...

Brand Name:Analog Devices Inc.

Model Number:AD8351ARMZ-REEL7

Place of Origin:Multi-origin

AD8351ARMZ-REEL7 RF Power Transistor Product Description: The AD8351ARMZ-REEL7 is an advanced silicon bipolar power transistor specifically designed for use in RF power amplifiers applications. It is a high performance, low cost device which provides high ...

Brand Name:Onsemi

Model Number:MMBT2222ALT1G

Place of Origin:Shenzhen,China

Bipolar Junction Transistor MMBT2222ALT1G Single Transistor Bipolar General Purpose NPN 40 V 300 MHz Product description Part number MMBT2222ALT1G is manufactured by Onsemi Company and distributed by AYE. As one of the leading distributors of electronic ...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:MMBTA56

SOT-23 Plastic-Encapsulate Transistors MMBTA56 TRANSISTOR (NPN) FEATURE l General Purpose Amplifier Applications Marking :2GM MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO ...

Brand Name:ROHM

Model Number:EMD3T2R

...General purpose (dual digital transistors) Specifications: Datasheets EMD3, UMD3N, IMD3A Product Photos EMT6_EMT6 PKg Catalog Drawings EMT-6 Package Top Standard Package 8,000 Category Discrete Semiconductor Products Family Transistors (BJT) - Arrays, Pre-Biased Series - Packaging Tape & Reel (TR) Transistor Type 1 NPN...

Brand Name:InterFET

Model Number:J201

Place of Origin:USA

J201 JFET N-Channel Transistor General Purpose high power rf transistors Manufacturer: Fairchild Product Category: JFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-92 Transistor Polarity: N-Channel Configuration: Single Vgs...

Place of Origin:US

Brand Name:Original

Model Number:KN2907A

Product Detail 1. Stock,Order goods or Manufacturing welcome. 2. Sample order. 3. We will reply you for your inquiry in 24 hours. 4. After sending, we will track the products for you once every two days, until you get the products. 5. When you got the ...

Model Number:LJ30A3-15-Z/EX

Place of Origin:China

Brand Name:Zhongde

IP67 Inductive Type Proximity Sensor NPN / PNP High Flexibility General Purpose Parameter Lag distance Less than 10% of the detection distance Detecting objects Magnetic metal (detection distance is reduced when non-magnetic metal) voltage DC : DC 12~24...

Brand Name:Original Factory

Model Number:AFGB40T65SQDN

Place of Origin:CN

General Purpose Surface Mount AFGB40T65SQDN IGBT Transistors Automobile Chips Product Description Of AFGB40T65SQDN AFGB40T65SQDN is Single IGBT 650 V 80 A 238 W Surface Mount Transistors.Package is TO-263-3. Specification Of AFGB40T65SQDN Part Number: AFGB40T65SQDN Pulsed Collector Current: 160A Collector Current: 40A Operating Junction And Storage Temperature Range: -55 To +175 °C ILM: 100% Type: Transistors...

Place of Origin:CN

Brand Name:Original Factory

Model Number:MMBT3904DWLT1

Integrated Circuits IC MMBT3904DWLT1 Discrete & Power Modules SOT-363 General Purpose and Low VCE(sat) Transistors MMBT3904DWLT1 [Who we are?] Shenzhen QINGFENGYUAN Technology Co., Ltd established in 2013, is a leading distributor of electronic components...

Brand Name:Original

Model Number:1SS398TE85LF

Place of Origin:Original

1SS398TE85LF Diodes General Purpose Power Switching 0.1A 400V PRODUCT DESCRIPTION Part number # 1SS398TE85LF is manufactured by Toshiba Technologies and distributed by Jalixin. As one of the leading distributors of electronic products, we carry many ...

Place of Origin:Original

P6SMB440CA Diode Triode Circuit Protection TVS Transistors P6SMB440CA Specifications Series P6SMB RoHS RoHS Type Zener Part Status Active Applications General Purpose Mounting Type Surface Mount Package / Case DO-214AA, SMB Power - Peak Pulse 600W ...

Brand Name:Renesas Electronics America Inc

Model Number:CA3140EZ

Product Details The CA3140A and CA3140 are integrated circuit operational amplifiers that combine the advantages of high voltage PMOS transistors with high voltage bipolar transistors on a single monolithic chip. Specifications Attribute Attribute Value ...

Brand Name:ST

Model Number:TIP122

Place of Origin:Original Factory

...Transistors TIP122 Darlington NPN 100V 5A 2000mW TO220 Power Transistor TIP120, TIP121, TIP122 TIP125, TIP126, TIP127 Description The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. The resulting transistors show exceptional high gain performance coupled with very low saturation voltage. Features Designed for General purpose...