7 5a n channel mosfet transistor

Brand Name:STM

Model Number:STF5NK100Z

Place of Origin:Original

N-Channel 1000V Mosfet STF5NK100Z Switching Application 3.5A 100V 3.7Ohm Power MOSFET Applications Switching application Description The new SuperMESH™ series of Power MOSFETS is the result of further design improvements on ST's well-established strip ...

Brand Name:Hua Xuan Yang

Model Number:5N20DY TO-252

Place of Origin:ShenZhen China

...Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other Mosfet Power Transistor General Features V DS =200V,I D =5A R DS(ON) <520mΩ @ V GS =4.5V Mosfet Power Transistor...

Place of Origin:US

Brand Name:Original

Model Number:TK8A60DA

Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7.5A (Ta) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 1Ohm...

Brand Name:Vishay Siliconix

Model Number:SI2305CDS-T1-GE3

Place of Origin:original

SI2305CDS-T1-GE3 N-Channel MOSFET Power Transistor for High-Speed Switching Applications Product Features: • N-Channel MOSFET • 30V drain-source voltage • 0.005Ω maximum on-state resistance • 1.5A (Tc) continuous drain current • Surface mount package • ...

Brand Name:CJ

Model Number:CJ2312

Place of Origin:CN

CJ2312 N - Channel 20V 5A ( D - S ) Mosfet SOT-23 ( TO-236 ) 3-Lead Plastic - Encapsulate Mosfets FEATURES: • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ...

Brand Name:onsemi

Model Number:FDS3992

Place of Origin:United States

FDS3992 Mosfet Array 100V 4.5A 2.5W Surface Mount 8-SOIC Datasheet:FDS3992 Category FET, MOSFET Arrays Mfr onsemi Series PowerTrench Product Status Active Technology MOSFET (Metal Oxide) Configuration 2 N-Channel (Dual) Drain to Source Voltage (Vdss) 100V ...

Brand Name:Original Factory

Model Number:IMBG65R030M1HXTMA1

Place of Origin:CN

... Part Number IMBG65R030M1HXTMA1 Drive Voltage (Max Rds On, Min Rds On) 18V Rds On (Max) @ Id, Vgs 42mOhm @ 29.5A, 18V Vgs(th) (Max) @

Place of Origin:China

Brand Name:ONSEMI

Model Number:NDS9945

...MOSFET NDS9945 Dual N-Channel Enhancement Mode Field Effect Transistor 60V, 3.5A, 100mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor...

Brand Name:original

Model Number:NTMD4840NR2G

Place of Origin:original

NTMD4840NR2G MOSFET NFET SO8 30V N - Channel Transistor MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 7.5 A FEATURES • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching ...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:HXY4812

HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary Absolute Maximum ...

Brand Name:To shi ba

Model Number:TK8A60DA(STA4,Q,M)

Place of Origin:Shenzhen, China

TK8A60DA Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube Technical Attributes : Description Value Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 7.5 A Maximum Drain Source Voltage 600 V Maximum Gate Source Voltage ±...

Place of Origin:Original

STS5N15F3 Specifications Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 150V Current - Continuous Drain (Id) @ 25°C 5A (Tc) Drive Voltage (Max Rds On,Min Rds On) - Vgs(th) (Max) @ Id 4V @ 250µA Gate ...

Brand Name:ON Semiconductor

Model Number:NDT2955

... Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 2.5 A Rds On - Drain-Source Resistance: 95 ...

Brand Name:NEXPERIA

Model Number:BUK78150-55A/CUX

Place of Origin:NEXPERIA

...MOSFET Microcontroller Chip MOS Standard N Channel Trench BUK78150-55A/CUX MOSFET N-channel TrenchMOS standard level FET『MOSFET N-CH 55V 5.5A SOT223』 Manufacturer: Nexperia Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-223-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel...

Brand Name:Nexperia

Model Number:BUK9M120-100EX

...-Reel® Product Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100 V Current - Continuous Drain (Id) @ 25°C 11.5A (Tc) Drive Voltage (Max Rds On, Min Rds On) 5V Rds On (Max) @ Id,

Place of Origin:original

Brand Name:original

Model Number:STH3N150-2

#detail_decorate_root .magic-0{margin-bottom:10px;overflow:hidden}#detail_decorate_root .magic-1{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:2px;padding-top:8px...

Categories:Onsemi Ic

Country/Region:china

...Channel MOSFET: NE521DR2G The NE521DR2G is a compact N-channel MOSFET from ON Semiconductor providing up to 5A of high-efficiency switching capability in an extremely space-efficient 2x3mm DFN package. As a low voltage transistor, it enables dense power control in the most stringent board area constraints. Key Features: 60V maximum drain-source voltage rating 5A...