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All 9 5a n channel mosfet wholesalers & 9 5a n channel mosfet manufacturers come from members. We doesn't provide 9 5a n channel mosfet products or service, please contact them directly and verify their companies info carefully.
| Total 30 products from 9 5a n channel mosfet Manufactures & Suppliers |
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Brand Name:SHENZHENFREESCALE Model Number:AOD5N50 Place of Origin:Original ... can be adopted quickly into new and existing offline power supply designs. Product Summary VDS 600V@150℃ D (at VGS=10V) 5A RDS(ON) |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:SHENZHENFREESCALE Model Number:AOD5N50 Place of Origin:Original ... can be adopted quickly into new and existing offline power supply designs. Product Summary VDS 600V@150℃ D (at VGS=10V) 5A RDS(ON) |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:onsemi Model Number:FDN537N Place of Origin:original ... On (Max) @ Id, Vgs 23mOhm @ 6.5A, 10V Vgs(th) (Max) @ Id 3V @ 250µA Gate Charge (Qg) (Max) @ Vgs 8.4 nC @ 10 V Vgs (... |
Shenzhen Sai Collie Technology Co., Ltd.
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Place of Origin:China Brand Name:ONSEMI Model Number:FDMA410NZ High Power MOSFET FDMA410NZ N-Channel PowerTrench® MOSFET, 1.5 V Specified, 20V, 9.5A, 23mΩ High Power MOSFET FDMA410NZ N-Channel PowerTrench® MOSFET, 1.5 V Specified, 20V, 9.5A, 23mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is ... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:TOSHIBA Model Number:TK5A90E,S4X Place of Origin:Original ..., combining π-MOS technology with a planar process to provide a wide selection of voltage and RDS(ON) ratings. These high-voltage MOSFETs are offered with a drain-source voltage range of 250V up to 650V, and with a drain current range from 2A to 20A. |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:5N20DY TO-252 Place of Origin:ShenZhen China ...Channel Mosfet Power Transistor 2A 600V Circuit Switching For LED Drive Mosfet Power Transistor Description The AP50N20D uses advanced trench technology to provide excellent RDS(ON) and low gate charge . The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other Mosfet Power Transistor General Features V DS =200V,I D =5A R DS(ON) <520mΩ @ V GS =4.5V Mosfet... |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:CJ Model Number:CJ2312 Place of Origin:CN CJ2312 N - Channel 20V 5A ( D - S ) Mosfet SOT-23 ( TO-236 ) 3-Lead Plastic - Encapsulate Mosfets FEATURES: • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg Tested • Compliant to RoHS Directive 2002/95/EC ... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Brand Name:onsemi Model Number:FDS3992 Place of Origin:United States ...Mosfet Array 100V 4.5A 2.5W Surface Mount 8-SOIC Datasheet:FDS3992 Category FET, MOSFET Arrays Mfr onsemi Series PowerTrench Product Status Active Technology MOSFET (Metal Oxide) Configuration 2 N-Channel (Dual) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 4.5A Rds On (Max) @ Id, Vgs 62mOhm @ 4.5A... |
Shenzhen Zhaocun Electronics Co., Ltd.
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Brand Name:STMicroelectronics Model Number:STD8NM60N Place of Origin:CHINA ...Channel MOSFET 600V 7A (Tc) 70W (Tc) Surface Mount DPAK FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 600V Current - Continuous Drain (Id) @ 25°C 7A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 650mOhm @ 3.5A... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Place of Origin:US Brand Name:Original Model Number:AOD478 ...-Key FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 100V Current - Continuous Drain (Id) @ 25°C 2.5A (Ta), 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max) @ Id, Vgs 140 mOhm @ 4.5A, 10V Vgs(th) (... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Place of Origin:United States #detail_decorate_root .magic-0{width:750px}#detail_decorate_root .magic-1{overflow:hidden;width:750px;height:869.6202531645571px;margin-top:0;margin-bottom:0;margin-left:0;margin-right:0}#detail_decorate_root .magic-2{margin-top:0;margin-left:0;width:750.... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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Place of Origin:ShenZhen China Brand Name:OTOMO Model Number:HXY4812 HXY4812 30V Dual N-Channel MOSFET General Description The HXY4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary Absolute Maximum ... |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:To shi ba Model Number:TK8A60DA(STA4,Q,M) Place of Origin:Shenzhen, China TK8A60DA Trans MOSFET N-CH 600V 7.5A 3-Pin(3+Tab) TO-220SIS - Rail/Tube Technical Attributes : Description Value Channel Mode Enhancement Channel Type N Maximum Continuous Drain Current 7.5 A Maximum Drain Source Voltage 600 V Maximum Gate Source Voltage... |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:ON Semiconductor Model Number:NDT2955 ... Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 60 V Id - Continuous Drain Current: 2.5 A Rds On - Drain-Source Resistance: 95 ... |
HK INTERRA TECHNOLOGY LIMITED
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Brand Name:Infineon Model Number:IRF7342TRPBF Place of Origin:China ... 55V 6.5A MOSFET Pair with 50mandOmega; RDS(on) Fast Switching Low Gate Charge SOIC-8 Package ESD Protected andamp; Ideal for DC-DC/Synchronous Rectification andnbsp; Features Generation V Technology Ultra Low On-Resistance Dual P Channel MOSFET Surface ... |
TOP Electronic Industry Co., Ltd.
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Brand Name:HT Model Number:D7N65 TO-252W Place of Origin:China ...CHANNEL POWER MOSFET DESCRIPTION The D7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. Features • RDS(ON) ≤ 1.3 Ω @ VGS=10V, ID=3.5A... |
Shenzhen Hunt Electronics Co., Ltd
Guangdong |
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Brand Name:NEXPERIA Model Number:BUK78150-55A/CUX Place of Origin:NEXPERIA ...MOSFET Microcontroller Chip MOS Standard N Channel Trench BUK78150-55A/CUX MOSFET N-channel TrenchMOS standard level FET『MOSFET N-CH 55V 5.5A SOT223』 Manufacturer: Nexperia Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-223-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel... |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Brand Name:Original Factory Model Number:NSI6601MC-DSPR Place of Origin:CN ...Channel NSI6601MC-DSPR Isolated Gate Driver IC SOP8 Integrated Circuit Chip Product Description Of NSI6601MC-DSPR NSI6601MC-DSPR is a single-channel isolation gate driver suitable for driving IGBT, power MOSFET and SiC MOSFET in many applications. Separate outputs are provided to control the rising and falling duration respectively. NSI6601MC-DSPR can provide peak source/sink current of 5A/5A... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Microchip Technology Model Number:TC4426EOA713 Place of Origin:Philippines ...5A Dual Inverting Power MOSFET Drivers Integrated circuits IC PMIC TC4426 TC4427 TC4428 Microchip 1.5A Dual Inverting Power MOSFET Drivers Integrated circuits IC TC4426EOA713 TC4426EOA713 Specification: Part number TC4426EOA713 Category Integrated Circuits (ICs) PMIC - Gate Drivers Mfr Microchip Technology Series - Package Tape & Reel (TR) Part Status Active Driven Configuration Low-Side Channel... |
Angel Technology Electronics Co
Hongkong |
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Brand Name:original Model Number:NTMD4840NR2G Place of Origin:original NTMD4840NR2G MOSFET NFET SO8 30V N - Channel Transistor MOSFET – Power, Dual, N-Channel, SOIC-8 30 V, 7.5 A FEATURES • Low RDS(on) to Minimize Conduction Losses • Low Capacitance to Minimize Driver Losses • Optimized Gate Charge to Minimize Switching ... |
Walton Electronics Co., Ltd.
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