advanced applications low rds on mosfet

Brand Name:Lingxun

Place of Origin:China

... for different system designs. Its low Rds(ON) resistance ensures efficient power transfer, reducing power loss and heat dissipation. Our Low Voltage MOSFET is an ideal solution for applications requiring high efficiency and low power consumption.

Brand Name:Infineon Technologies

Model Number:IRLZ44NPBF

Place of Origin:original

...MOSFET High Performance Low RDS on for Power Electronics Applications Product Description: The IRLZ44NPBF is an N-Channel MOSFET designed to provide superior performance in power management applications. This MOSFET is built using the latest in advanced power semiconductor technology and is capable of switching high voltages and currents while exhibiting low on-resistance. Key Features: • N-Channel MOSFET • Advanced...

Brand Name:IXYS

Model Number:IXFK27N80Q

Place of Origin:Original Factory

...Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS advanced low Qg process • Low gate charge and capacitances - easier to drive - faster switching • International standard packages z Low RDS...

Brand Name:Infineon

Model Number:IRFI4019HG-117P

Place of Origin:China

...MOSFET 100V Ultra-Low Rds(on) 1.9mΩ TO-264 High Efficiency Robust Performance Superior Thermal Management and High Power Density for Demanding Applications Features Integrated Half-Bridge Package Reduces the Part Count by Half Facilitates Better PCB Layout Key Parameters Optimized for Class-D Audio Amplifier Applications Low RDS(ON) for Improved Efficiency Low Qg and Qsw for Better THD and Improved Efficiency Low...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Product Description: The low voltage MOSFET is a semiconductor device that has become an indispensable component in modern electronic circuits. It is designed to operate at low power levels while maintaining high efficiency and performance. The low voltage...

Brand Name:Hua Xuan Yang

Model Number:AP25N10X

Place of Origin:ShenZhen China

... switching This device is specially designed to get better ruggedness and suitable to use in Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity or Invertors Mosfet Power Transistor Features VDS =100V I D =25 A RDS(ON) < 55mΩ

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

...MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating:2000V HBM Application...

Brand Name:FAIRCHILD

Model Number:FDN304PZ

Place of Origin:Original

...MOSFET switching power mosfet Features · ► –2.4 A, –20 V. RDS(ON) = 52 mW @ VGS = –4.5 V RDS(ON) = 70 mW @ VGS = –2.5 V RDS(ON) = 100 mW @ VGS = –1.8 V ► Fast switching speed ► ESD protection diode ► High performance trench technology for extremely low RDS(ON) ► SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint Applications...

Brand Name:SHENZHENFREESCALE

Model Number:AOD5N50

Place of Origin:Original

...popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Product Summary VDS 600V@150℃ D (at VGS=10V) 5A RDS(ON)

Brand Name:Original Factory

Model Number:DMT47M2SFVWQ

Place of Origin:CN

... QG × RDS(ON) product (FOM) and low RDS(ON). The low RDS(ON) ensures that the on-state losses are minimal. This MOSFET assures reliable and robust end application due to 100% unclamped inductive switching and test in production. DMT47M2SFVWQ MOSFET is

Brand Name:Huixin

Model Number:BSS138

Place of Origin:China

... Plastic-Encapsulate MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible APPLICATIONS 1.Direct Logic-...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low...

Brand Name:ON Semiconductor

Model Number:MMDF3N04HDR2

Place of Origin:Shenzhen, China

... high energy in the avalanche and commutation modes and the drain−to−source diode has a very low reverse recovery time. These devices are designed for use in low voltage, high speed switching applications where power efficiency is important.

Brand Name:IOR

Model Number:IRFR9024NTRPBF

Place of Origin:CHINA

... P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 175 mOhm @ 6.6A, 10V Vgs(th) (Max) @

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

...MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE  High power and current handing capability  Lead free product is acquired  Surface mount package APPLICATION...

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

... MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4....

Place of Origin:PHILIPPINE

Brand Name:Fairchild Semiconductor

Model Number:FDS7079ZN3

...electrical performance. Applications for this device include multi-cell battery protection and charging, including protection and load switching in notebook computer and notebook battery packs. Applications: • –16 A, –30 V. RDS(ON) = 7.5 mΩ @ VGS =

Brand Name:HT

Model Number:D7N65 TO-252W

Place of Origin:China

...MOSFET DESCRIPTION The D7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. Features • RDS...

Brand Name:Onsemi

Model Number:2N7002KT1G 2V7002KT1G 2N7002KT7G

Place of Origin:CHINA

...mosfet N-Channel Small 60V 380mA semiconductor components Discrete&Power Modules 2N7002K 2V7002K N-Channel Small Signal MOSFET 60V 380mA Applications: Low Side Load Switch Level Shift Circuits DC−DC Converter Portable Applications,s i.e. DSC, PDA, Cell Phone, etc. Benefits: Improved system efficiency Space saving RoHS compliant Features: Low RDS...

Brand Name:Onsemi

Model Number:2N7002KT1G 2V7002KT1G 2N7002KT7G

...mosfet N-Channel Small 60V 380mA semiconductor components Discrete&Power Modules 2N7002K 2V7002K N-Channel Small Signal MOSFET 60V 380mA Applications: Low Side Load Switch Level Shift Circuits DC−DC Converter Portable Applications,s i.e. DSC, PDA, Cell Phone, etc. Benefits: Improved system efficiency Space saving RoHS compliant Features: Low RDS...