automotive mosfet power module substrate

Brand Name: Yuxing

Place of Origin:china

Product Description: Our Ceramic Substrates are engineered to meet the highest standards of quality and performance, making them an ideal choice for a wide range of industrial applications. As essential components in electronic and electrical devices...

Brand Name:Original Factory

Model Number:A2U12M12W2-F2

Place of Origin:CN

... topology that integrates the advanced silicon carbide Power MOSFET technology. This A2U12M12W2-F2 module leverages the innovative properties of the wide-bandgap SiC material and a high-thermal-performance substrate. The result is exceptionally low on

Brand Name:Pe

Model Number:7MBR75UB120-50

Place of Origin:Japan

...Mosfet Power Module IC 7MBR75UB120-50 IGBT Module Driver 7MBR75UB120-50 IGBT MODULE (U series) 1200V / 75A / PIM Features . Low VCE(sat) · Compact Package · P.C. Board Mount Module · Converter Diode Bridge Dynamic Brake Circuit Applications · Inverter for Motoe Drive · AC and DC Servo Drive Amplifier · Uninterruptible Power...

Brand Name:onsemi

Model Number:FDMS7658AS

Place of Origin:original

FDMS7658AS N-Channel Automotive MOSFET Power Electronics for High Efficiency and Reliability Applications Product Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C ...

Model Number:FSBB30CH60F

Place of Origin:original factory

...Mosfet Power Module thyristor diode Smart Power Module Features • UL Certified No.E209204(SPM27-EA package) • Very low thermal resistance due to using DBC • 600V-30A 3-phase IGBT inverter bridge including control ICs for gate driving and protection • Divided negative dc-link terminals for inverter current sensing applications • Single-grounded power...

Brand Name:IXYS

Model Number:IXFN48N50

Place of Origin:CN

Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 500V Current - Continuous Drain (Id) @ 25°C 48A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Vgs(th) (Max) @ Id 4V @ 8mA Gate Charge (Qg) (Max) @ Vgs ...

Brand Name:Hua Xuan Yang

Model Number:AP3N10BI

Place of Origin:ShenZhen China

...Mosfet Power Transistor Low Voltage 100V N Channel Mosfet Power Working and Characteristics The construction of the power MOSFET is in V-configurations, as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate...

Brand Name:Horexs

Model Number:GC-01

Place of Origin:china

Camera/Bluetooth/Wireless Module substrate manufacture Application:Semiconductor package,Wireless modules,Power AMS module,Bluetooth module,Camera module,IC package,WIFI module/Bluetooth module,Others; Spec.of Substrate production: Mini.Line space/width:...

Brand Name:wuxi special ceramic

Place of Origin:China

... thermal conductivity Aluminum Nitride (AIN) ceramic, this substrate offers exceptional thermal management and electrical insulation properties, making it an ideal choice for a wide range of industrial applications. Surface Finish: ...

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:Jinghui Ceramics

Place of Origin:China

... quality control with carefully selected high purity ceramic materials that ensure stable and consistent quality and excellent properties. These alumina substrates have extraordinary properties of electrical insulation, thermal conductivity,

Brand Name:Infineon Technologies

Model Number:IPB044N15N5ATMA1

Place of Origin:Germany

... Attribute Value Search Similar Manufacturer: Infineon Product Category: MOSFET Technology: Si Mounting Style: SMD/SMT Package / Case: TO-263-7 Transistor Polarity: N-Channel Number of Channels: 1 Channel ...

Brand Name:Infineon

Model Number:FF1500R12IE5

Place of Origin:China

...power module FP25R12U1T4 SmartPIM module with Trench/Fieldstop IGBT4 and Emitter Controlled 4 diode Typical Applications • Auxiliary Inverters • Air Conditioning • Motor Drives • Servo Drives Electrical Features • Low SwitchingLosses • Trench IGBT 4 • Tvj op = 150°C • VCEsat withpositiveTemperature Coefficient • Low VCEsat Mechanical Features • Al2O3 Substrate...

Brand Name:Toshiba

Model Number:TPH2R306NH1,LQ

Place of Origin:Original

... Automotive U-MOSVIII-H Power MOSFETs are 100V N-channel power MOSFETs ideal for automotive applications. They feature low on-resistance with proprietary technology using a Cu connector. They have a narrowed gate threshold voltage range of 2.5V to 3....

Place of Origin:America

Brand Name:IXYS

Model Number:VMK165-007T

...Power MOSFET Module. Part NO: VMK165-007T Brand: IXYS Mounting Type: Screws Date Code: 01+ Quality Warranty: 3 Months Overview We specialize in high power and power conversion modules of famous brands Categories include: Darlington Schottky, rectifier intelligent, IGBT, IPM, GTR, DC-DC, AC-DC rectifier and power supply and other modules. Applications: power...

Categories:High Power MOSFET

Country/Region:china

... years, specialize in selling the new and unused, original factory sealed packing electronic components. specialize in IC,MCU,Memory,Module,diode,transistor,IGBT,PCBA, prototype,BOM Kitting. Sunbeam Electronics has a

Place of Origin:Original

Brand Name:Infineon Technologies

Model Number:IRG4BC30UDPBF

IRG4BC30UDPBF IGBT Power Module Transistors IGBTs Single IRG4BC30UDPBF Specifications Part Status Active IGBT Type - Voltage - Collector Emitter Breakdown (Max) 600V Current - Collector (Ic) (Max) 23A Current - Collector Pulsed (Icm) 92A Vce(on) (Max) @ ...

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

...Power Module TCAN1042GDQ1 IGBT Power Module Texas Instruments/TI TCAN1042GDQ1 Protocols CAN, CAN FD Number of channels (#) 1 Supply voltage (V) 4.5 to 5.5 Bus fault voltage (V) -58 to 58 Signaling rate (Max) (Mbps) 5 TI functional safety category Functional Safety-Capable Rating Automotive Operating temperature range (C) -55 to 125 Low power...

Brand Name:Texas Instruments

Model Number:TCAN1042GDQ1

Place of Origin:N/S

...) 5 TI functional safety category Functional Safety-Capable Rating Automotive Operating temperature range (C) -55 to 125 Low power mode Standby Common mode voltage (V) -30 to 30 Isolated No Features for the TCAN1042G-Q1 AEC-Q100 (grade 1): Qualified for

Brand Name:TI

Model Number:CSD18563Q5A

Place of Origin:China

CSD18563Q5A 60V MOSFET 1.7mandOmega; RDS(on) 300A Current Fast Switching AEC-Q101 Qualified Superior Thermal Performance D2PAK-7 Package for Automotive andamp; Power​ andnbsp; Features andbull; Ultra-Low Qg and Qgd andbull; Soft Body Diode for Reduced ...