battery low vgs n channel mosfet

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low Gate Voltage MOSFET with Reliable and High EAS Capability *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-height: 1.5; -webkit-font-smoothing: antialiased; } img, picture, video, canvas, svg {...

Brand Name:AOS

Model Number:AOD407

Place of Origin:original

AOD407 MOSFET Power Electronics Transistors 60V 50W Surface Mount P-Channel Package TO-252 FET Type P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60 V Current - Continuous Drain (Id) @ 25°C 12A (Tc) Drive Voltage (Max Rds On, Min...

Brand Name:Hua Xuan Yang

Model Number:AOD424G

Place of Origin:ShenZhen China

...Channel MOSFET General Description • Trench Power MOSFET technology • Low R DS(ON) • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Battery protection switch Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

...Channel Enhancement Mode MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS=4.5V ESD Rating:2000V HBM Application Battery...

Brand Name:FAIRCHILD

Model Number:SSS7N60B

Place of Origin:Original

...100% avalanche tested • Improved dv/dt capability • TO-220F package isolation = 4.0kV (Note 6) General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.

Brand Name:IOR

Model Number:IRFR9024NTRPBF

Place of Origin:CHINA

... P-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 11A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 175 mOhm @ 6.6A, 10V Vgs(th) (Max) @

Brand Name:original

Model Number:IRLML6401TRPBF

...Channel MOSFET SOT23-3 IRLML6401TRPBF Products Description: MOSFET; Power; P-Ch; VDSS -12V; RDS(ON) 0.05Ohm; ID -4.3A; Micro3; PD 1.3W; VGS +/-8V Trans MOSFET P-CH 12V 4.3A 3-Pin Micro T/R Transistor: P-MOSFET; unipolar; logic level; -12V; -4.3A; 1.3W These P-Channel MOSFETs from International Rectifier utilize advancedprocessing techniques to achieve extremely low...

Brand Name:onsemi

Model Number:NDS331N

Place of Origin:China

...Channel MOSFET 1.6A Continuous 0.25andOmega; Rds(on) SOT-23 1.8V Logic Level -55anddeg;C to +150anddeg;C andnbsp; Features andnbsp;1.3 A, 20 V andnbsp;RDS(on) = 0.21 @ VGS = 2.7 V andnbsp;RDS(on) = 0.16 @ VGS = 4.5 V andnbsp;Industry Standard Outline SOTandminus;23 Surface Mount Package Using Proprietary SUPERSOT andminus;3 Design for Superior Thermal and Electrical Capabilities andnbsp;High Density Cell Design for Extremely Low...

Brand Name:SHENZHENFREESCALE

Model Number:AOD5N50

Place of Origin:Original

...popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs. Product Summary VDS 600V@150℃ D (at VGS=10V) 5A RDS(ON)

Brand Name:CJ

Model Number:CJ2310 S10

Place of Origin:CHINA

...Channel MOSFET Plastic-Encapsulate MOSFETS DESCRIPTION The CJ2310 uses advanced trench technology to provide excellent RDS(ON) , low gate charge and operation with gate voltage as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. FEATURE  High power and current handing capability  Lead free product is acquired  Surface mount package APPLICATION  Battery

Brand Name:Original Brand

Model Number:IRLML6402TRPBF

Place of Origin:CN

... low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

... gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=

Place of Origin:PHILIPPINE

Brand Name:Fairchild Semiconductor

Model Number:FDS7079ZN3

...electrical performance. Applications for this device include multi-cell battery protection and charging, including protection and load switching in notebook computer and notebook battery packs. Applications: • –16 A, –30 V. RDS(ON) = 7.5 mΩ @ VGS =

Brand Name:JEUNKEI

Model Number:JY13M

Place of Origin:China

... complementary MOSFETs may be used in H-bridge, Inverters and other applications. Features: Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=-12A <66mΩ@VGS=-4

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

... gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=

Brand Name:Original Factory

Model Number:SCT30N120H

Place of Origin:CN

...Channel 1200V Single MOSFETs Transistors Product Description Of SCT30N120H SCT30N120H is N-Channel 1200 V 40A (Tc) 270W (Tc) Transistors Surface Mount,the package is TO-263-3. Specification Of SCT30N120H Part Number SCT30N120H Vgs(th) (Max) @ Id 3.5V @ 1mA Gate Charge (Qg) (Max) @ Vgs 105 nC @ 20 V Vgs (Max) +25V, -10V Features Of SCT30N120H Very tight variation of on-resistance vs.temperature Low...

Brand Name:Huixin

Model Number:BC2301

Place of Origin:China

SOT-23 Plastic-Encapsulate MOSFETS BC2301 P-Channel 20-V(D-S) MOSFET BC2301 SOT-23 Datasheet.pdf FEATURES TrenchFET Power MOSFET MARKING: 2301 APPLICATIONS Load Switch for Portable Devices DC/DC Converter Maximum ratings (Ta=25℃ unless otherwise noted) ...

Brand Name:HT

Model Number:D7N65 TO-252W

Place of Origin:China

...CHANNEL POWER MOSFET DESCRIPTION The D7N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors. Features • RDS(ON) ≤ 1.3 Ω @ VGS...

Brand Name:FORTUNE

Model Number:FS8205A

Place of Origin:TAIWAN

...Channel Enhancement-Mode MOSFET (20V, 6A) 1.Description This N-Channel 2.5V specified MOSFET is a rugged gate version of advanced trench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V-10V) 2.Features RDS(on)=38mΩ@VGS=2.5V, ID=5.2A; RDS(on)=25mΩ@VGS=4.5V, ID=6A • High Density Cell Design for Ultra Low...

Brand Name:ONSEMI

Model Number:BSS138LT1G

Place of Origin:China

...MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R The ON Semiconductor MOSFET is an N channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Voltage of the product is 50 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C. Features and Benefits: • Low Threshold Voltage (VGS(th): 0.85 V-1.5 V) Makes it Ideal for Low