bld6g21l 50 112 mosfet transistor

Place of Origin:Original

BLD6G21L-50,112 Specifications Part Status Obsolete Transistor Type LDMOS (Dual), Common Source Frequency 2.02GHz Gain 14.5dB Voltage - Test 28V Current Rating 10.2A Noise Figure - Current - Test 170mA Power - Output 8W Voltage - Rated 65V Package / Case SOT-1130A Supplier Device Package CDFM4 Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLD6G21L-50,112...

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 170 mA 2.02GHz 14.5dB 8W CDFM4

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 170 mA 2.02GHz 14.5dB 8W CDFM4

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 170 mA 2.02GHz 14.5dB 8W CDFM4

Categories:Transistors - FETs, MOSFETs - RF

Country/Region:china

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLD6G21LS-50,112 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

... mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at ...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

Product Detail IRF3205 also have China made high quality,cheap quality, original, if interested,pls contact us to get quote. Our company can supply all IRF Series,BT134-600E IRF3205 IRF540 IRF630 IRF640 IRFP250 IRF4905 IRF730 IRF740 IRFZ44 BT136S-600 ...

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

... mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at ...

Model Number:IRF1404PBF

Place of Origin:China

Brand Name:original

Transistor MOSFET N channel 162A 40V 4MOHM MOS tube IRF1404PBF Products Description: 1. INFINEON IRF1404PBF transistor, MOSFET, N channel, 162 A, 40 V, 4 MoHM, 10 V, 4 V 2. The to-220 package is universally preferred for allcommercial-industrial applications at power There is a cost of approximately 50...

Brand Name:Original Factory

Model Number:SCT011H75G3AG

Place of Origin:CN

.... Specification Of SCT011H75G3AG Part Number: SCT011H75G3AG Package: H²PAK-7 Gate-Source Voltage: -10V To 22V Thermal Resistance, Junction-To-Ambient: 50 °C/W

Model Number:IRFP6227

Place of Origin:United States

Brand Name:Original

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Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 50 V 150 mA 3GHz 11.5dB 50W SOT467C

Brand Name:Infi neon

Model Number:IRF3205PBF

Place of Origin:Shenzhen, China

IRF3205PBF Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube Basic Parameters : Advanced Process Technology. Ultra Low On-Resistance. Dynamic dv/dt Rating. 175°C Operating Temperature. Fast Switching. Fully Avalanche Rated. Lead-Free. Absolute ...

Model Number:AFT21S232S

Place of Origin:Malaysia

Brand Name:KAIGENG

AFT21S232S N/A Electronic Components IC MCU Microcontroller Integrated Circuits AFT21S232S #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...

Brand Name:AOS

Model Number:AO4430

Place of Origin:original

AO4430 MOSFET Power Electronics Discrete Semiconductor Transistors N-Channel 30V 3W Surface Mount Package 8-SOIC ET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDC6306P

High Power MOSFET FDC6306P Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ...

Brand Name:Hua Xuan Yang

Model Number:AP50N10P

Place of Origin:ShenZhen China

...Mosfet Power Transistor 50A 100V Mosfet Power Transistor Description: The AP50N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor Features VDS = 100V ID =50...

Brand Name:Original

Model Number:IRLML6401TRPBF

Place of Origin:Original

... Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 50 mOhms Vgs -

Brand Name:Freescale

Model Number:MRF6V3090NBR5

Place of Origin:USA

MRF6V3090NBR1 RF Mosfet LDMOS 50V 350mA 860MHz 22dB 18W TO-272 WB-4 Designed for broadcast and commercial aerospace broadband applications with frequencies from 470 to 1215 MHz. Features 1, Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz...

Brand Name:Huixin

Model Number:BSS138

Place of Origin:China

...MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible APPLICATIONS 1.Direct Logic-Level Interface: TTL/CMOS 2.Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors...