bld6g21ls 50 112 mosfet transistor

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 170 mA 2.02GHz 14.5dB 8W CDFM4

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 170 mA 2.02GHz 14.5dB 8W CDFM4

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 170 mA 2.02GHz 14.5dB 8W CDFM4

Place of Origin:Original

...50,112 Specifications Part Status Obsolete Transistor Type LDMOS (Dual), Common Source Frequency 2.02GHz Gain 14.5dB Voltage - Test 28V Current Rating 10.2A Noise Figure - Current - Test 170mA Power - Output 8W Voltage - Rated 65V Package / Case SOT-1130A Supplier Device Package CDFM4 Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLD6G21L-50,112...

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

... mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at ...

Place of Origin:US

Brand Name:Original

Model Number:IRF3205PBF

Product Detail IRF3205 also have China made high quality,cheap quality, original, if interested,pls contact us to get quote. Our company can supply all IRF Series,BT134-600E IRF3205 IRF540 IRF630 IRF640 IRFP250 IRF4905 IRF730 IRF740 IRFZ44 BT136S-600 ...

Brand Name:VISHAY

Model Number:SI2301CDS-T1-E3

Place of Origin:Philippines

... mosfet transistors P - Channel 20-V (D-S) MOSFET P-Channel 20-V (D-S) MOSFET FEATURES • Halogen-free Option Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch MOSFET PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A)a Qg (Typ.) - 20 0.112 at ...

Model Number:IRF1404PBF

Place of Origin:China

Brand Name:original

Transistor MOSFET N channel 162A 40V 4MOHM MOS tube IRF1404PBF Products Description: 1. INFINEON IRF1404PBF transistor, MOSFET, N channel, 162 A, 40 V, 4 MoHM, 10 V, 4 V 2. The to-220 package is universally preferred for allcommercial-industrial applications at power There is a cost of approximately 50...

Brand Name:Original Factory

Model Number:SCT011H75G3AG

Place of Origin:CN

.... Specification Of SCT011H75G3AG Part Number: SCT011H75G3AG Package: H²PAK-7 Gate-Source Voltage: -10V To 22V Thermal Resistance, Junction-To-Ambient: 50 °C/W

Model Number:IRFP6227

Place of Origin:United States

Brand Name:Original

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Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 50 V 150 mA 3GHz 11.5dB 50W SOT467C

Brand Name:Infi neon

Model Number:IRF3205PBF

Place of Origin:Shenzhen, China

IRF3205PBF Trans MOSFET N-CH Si 55V 110A 3-Pin(3+Tab) TO-220AB Tube Basic Parameters : Advanced Process Technology. Ultra Low On-Resistance. Dynamic dv/dt Rating. 175°C Operating Temperature. Fast Switching. Fully Avalanche Rated. Lead-Free. Absolute ...

Model Number:AFT21S232S

Place of Origin:Malaysia

Brand Name:KAIGENG

AFT21S232S N/A Electronic Components IC MCU Microcontroller Integrated Circuits AFT21S232S #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-...

Brand Name:AOS

Model Number:AO4430

Place of Origin:original

AO4430 MOSFET Power Electronics Discrete Semiconductor Transistors N-Channel 30V 3W Surface Mount Package 8-SOIC ET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 18A (Ta) Drive ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDC6306P

High Power MOSFET FDC6306P Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 ...

Brand Name:Hua Xuan Yang

Model Number:AP50N10P

Place of Origin:ShenZhen China

...Mosfet Power Transistor 50A 100V Mosfet Power Transistor Description: The AP50N10P uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. Mosfet Power Transistor Features VDS = 100V ID =50...

Brand Name:Lingxun

Model Number:CS50N20A6

Place of Origin:China

...MOSFET Low Power Loss Silicon MOSFET Transistor With Low Rds(ON) Part Number Package Die Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) RDS(ON) 4.5V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. TYP MAX TYP MAX Typ Typ CS50N20A6 TO-247 1 N 50 200 ±30 2 4 48 58 Product Description: One of the key advantages of this MOSFET...

Brand Name:Original

Model Number:IRLML6401TRPBF

Place of Origin:Original

... Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-23-3 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 50 mOhms Vgs -

Brand Name:Freescale

Model Number:MRF6V3090NBR5

Place of Origin:USA

MRF6V3090NBR1 RF Mosfet LDMOS 50V 350mA 860MHz 22dB 18W TO-272 WB-4 Designed for broadcast and commercial aerospace broadband applications with frequencies from 470 to 1215 MHz. Features 1, Capable of Handling 10:1 VSWR, All Phase Angles, @ 50 Vdc, 860 MHz...

Brand Name:Huixin

Model Number:BSS138

Place of Origin:China

...MOSFETS BSS138 N-Channel 50-V(D-S) MOSFET V(BR)DSS RDS(on)MAX ID 50 V 3.5Ω@10V 220mA 6Ω@4.5V BSS138 SOT-23 Datasheet.pdf FEATURES 1.High density cell design for extremely low RDS(on) 2.Rugged and Relaible APPLICATIONS 1.Direct Logic-Level Interface: TTL/CMOS 2.Drivers: Relays, Solenoids, Lamps, Hammers,Display, Memories, Transistors...