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All blf6g20ls 75 118 rf power transistor wholesalers & blf6g20ls 75 118 rf power transistor manufacturers come from members. We doesn't provide blf6g20ls 75 118 rf power transistor products or service, please contact them directly and verify their companies info carefully.
| Total 16 products from blf6g20ls 75 118 rf power transistor Manufactures & Suppliers |
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Categories:Transistors - FETs, MOSFETs - RF Country/Region:china ..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G20LS-75,118 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ... |
Rozee Electronics Co., Ltd
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Brand Name:Silicon Labs Model Number:SI4438-B1C-FMR Place of Origin:Multi-origin SI4438-B1C-FMR RF Power Transistor Product Overview: The SI4438-B1C-FMR is a high-performance RF power transistor designed for use in a wide range of applications, including base stations, portable radios, and broadband amplifiers. Featuring a high gain... |
Shenzhen Sai Collie Technology Co., Ltd.
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Place of Origin:MALAYSIA Brand Name:FSL Model Number:MRF6VP3450HR5 MRF6VP3450HR5 is a RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6VP3450HR5 Brand: FSL Date Code: 322+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High ... |
Mega Source Elec.Limited
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Brand Name:VBE Model Number:VBE36015E2 Place of Origin:CHINA
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VBE Technology Shenzhen Co., Ltd.
Guangdong |
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Categories:RF FETs, MOSFETs Country/Region:china RF Mosfet 28 V 550 mA 1.93GHz ~ 1.99GHz 19dB 29.5W SOT502B |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Categories:RF FETs, MOSFETs Country/Region:china RF Mosfet 28 V 550 mA 1.93GHz ~ 1.99GHz 19dB 29.5W SOT502B |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:NXP Model Number:BFS505 Place of Origin:CHINA BFS505 NPN PNP Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent ... |
DELI ELECTRONICS TECHNOLOGY CO.,LTD
Guangdong |
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Place of Origin:CN Brand Name:Original Factory Model Number:QPD1035 QPD1035 Wireless Communication Module 40W 50V 6 GHz GaN RF Power Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% Low Price Guaranteed + Export to 108 ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Place of Origin:Original BLF6G20-230PRN,118 Specifications Part Status Obsolete Transistor Type LDMOS (Dual), Common Source Frequency 1.8GHz ~ 1.88GHz Gain 17.5dB Voltage - Test 28V Current Rating - Noise Figure - Current - Test 2A Power - Output 65W Voltage - Rated 65V Package / ... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Brand Name:Mitsubishi Electric Semiconductor Model Number:2SC1971 Place of Origin:CHINA 2SC1971 C1971 TO220 NPN epitaxial planar type transistor designed for RF power amplifiers Description: silicon NPN epitaxial planar type transistor designed for RF power amplifiers on VHF band mobile radio applications. List Of Other Electronic Components... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Model Number:BC817-25 Place of Origin:Original & New BC817-25 45 V, 500 mA NPN general-purpose transistors SOT23 Original Description NPN general-purpose transistors in a small SOT23 Surface-Mounted Device (SMD) plastic package. Feature: • High current • Three current gain selections • AEC-Q101 qualified ... |
ChongMing Group (HK) Int'l Co., Ltd
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Model Number:2SC2782 Place of Origin:Malaysia Brand Name:KAIGENG 2SC2782 N/A Electronic Components IC MCU Microcontroller Integrated Circuits 2SC2782 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:... |
Shenzhen Kaigeng Technology Co., Ltd.
Guangdong |
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Brand Name:MITSUBISHI Model Number:RD06HVF1 Place of Origin:Original RD06HVF1 MOS FET type transistor low power mosfet high voltage power mosfet DESCRIPTION RD06HVF1 is a MOS FET type transistor specifically designed for VHF RF power amplifiers applications. FEATURES High power gain: Pout>6W, Gp>13dB @Vdd=12.5V,f=175MHz ... |
Anterwell Technology Ltd.
Guangdong |
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Brand Name:Microchip / Microsemi Model Number:JAN2N2222A Place of Origin:ORIGINAL JAN2N2222A Bipolar Transistors - BJT 50 V Small-Signal BJT Manufacturer: Microchip Product Category: Bipolar Transistors - BJT RoHS: N Technology: Si Mounting Style: Through Hole Package / Case: TO-18-3 Transistor Polarity: NPN Configuration: Single ... |
Wisdtech Technology Co.,Limited
Guangdong |
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Place of Origin:Jiangsu, China Brand Name:RFint Model Number:YSGM060808 Innotion Original RF VCO 8dBm 615MHZ-950MHz Voltage Controlled Oscillator for Intergrated Circuit ChipYSGM060808 with High Output Power Product Description YSGM060808 is a highly integrated, standard package size VCO, using a high cut-off frequency RF ... |
Zhongshi Zhihui Technology (suzhou) Co., Ltd.
Jiangsu |
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Brand Name:TX TELSIG Model Number:YP163137 Place of Origin:China TXtelsig YP163137 RF Amplifier 1500-1700MHz 5W GaAs MMIC Power Amplifier The YP163137 is a high-power, high-efficiency Power Amplifier intend for Compass Satellite Communication and Navigation. The Power Amplifier provides a typical gain of 31 dB and P1dB... |
Shenzhen TeXin electronic Co., Limited
Guangdong |
