blf6g27ls 135 118 mosfet transistor

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 32 V 1.2 A 2.5GHz ~ 2.7GHz 16dB 20W SOT502B

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 32 V 1.2 A 2.5GHz ~ 2.7GHz 16dB 20W SOT502B

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 32 V 1.2 A 2.5GHz ~ 2.7GHz 16dB 20W SOT502B

Categories:Transistors - FETs, MOSFETs - RF

Country/Region:china

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF6G27LS-75,118 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Place of Origin:Original

BLF6G27LS-40PHJ Specifications Part Status Last Time Buy Transistor Type LDMOS (Dual), Common Source Frequency 2.5GHz ~ 2.7GHz Gain 17.5dB Voltage - Test 28V Current Rating - Noise Figure - Current - Test 450mA Power - Output - Voltage - Rated 65V Package...

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 600 mA 9W SOT502B

Brand Name:Anterwell

Model Number:SPW35N60CFD

Place of Origin:original factory

CoolMOSTM Power Transistor Features PG-TO247 • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic ...

Brand Name:Nexperia

Model Number:BUK761R7-40E,118

...118 TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Obsolete FET Type N-Channel Technology MOSFET...

Model Number:SPW35N60CFD

Place of Origin:original factory

CoolMOSTM Power Transistor Features PG-TO247 • New revolutionary high voltage technology • Intrinsic fast-recovery body diode • Extremely low reverse recovery charge • Ultra low gate charge • Extreme dv /dt rated • High peak current capability • Periodic ...

Brand Name:Mitsubishi

Model Number:RA30H1317M

Place of Origin:JP

...135- to 175-MHz range. The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The

Brand Name:Infineon Technologies

Model Number:BSC060N10NS3G

Place of Origin:original

BSC060N10NS3G MOSFET Power Electronics High-Performance Low-Power Consumption Transistor for Industrial Applications IRF6217TRPBF - N-Channel MOSFET Transistor Parameters: VDS (Max) = 100V VGS (Max) = ±20V ID (Max) = 7.8A RDS (on) (Max) = 0.068Ω Package ...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF6VP3450HR5

MRF6VP3450HR5 is a RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6VP3450HR5 Brand: FSL Date Code: 322+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High ...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMS86500DC

High Power MOSFET FDMS86500DC N-Channel Dual CoolTM 56 Power Trench® MOSFET 60V, 108A, 2.3mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, ...

Place of Origin:US

Brand Name:Original

Model Number:MBR20100CTL

Product Detail Packaging Tube Part Status Active Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Voltage - Forward (Vf) (Max) @ If 900mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse ...

Categories:Onsemi Ic

Country/Region:china

...MOSFET RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SOT-323-6 Transistor Polarity: P-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 1.2 A Rds On - Drain-Source Resistance: 135...