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All blf6g38ls 112 power mosfet wholesalers & blf6g38ls 112 power mosfet manufacturers come from members. We doesn't provide blf6g38ls 112 power mosfet products or service, please contact them directly and verify their companies info carefully.
| Total 1330 products from blf6g38ls 112 power mosfet Manufactures & Suppliers |
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Brand Name:IRF Model Number:IRLML6402TRPBF Place of Origin:Original ...Power MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs... |
Anterwell Technology Ltd.
Guangdong |
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Place of Origin:China Brand Name:ONSEMI Model Number:FDC6306P High Power MOSFET FDC6306P Dual P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -1.9A, 170mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components ... |
Sunbeam Electronics (Hong Kong) Limited
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Brand Name:IRF Model Number:IRLML6402TRPBF Place of Origin:Original ...Power MOSFET T ♦Ultra Low On-Resistance ♦P-Channel MOSFET ♦SOT-23 Footprint ♦Low Profile (<1.1mm) ♦Available in Tape and Reel ♦Fast Switching These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs... |
ChongMing Group (HK) Int'l Co., Ltd
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Brand Name:REASUNOS Place of Origin:Guangdong, CN ... based on the national military standard production line, this MOSFET is designed to meet the stringent requirements of military and industrial applications where performance and durability are paramount. As a device type MOSFET, this high power MOSFET is |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Place of Origin:US Brand Name:Original Model Number:IRF3205PBF Product Detail IRF3205 also have China made high quality,cheap quality, original, if interested,pls contact us to get quote. Our company can supply all IRF Series,BT134-600E IRF3205 IRF540 IRF630 IRF640 IRFP250 IRF4905 IRF730 IRF740 IRFZ44 BT136S-600 ... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Brand Name:HT Model Number:F4N65L TO-220F-3L Place of Origin:China ...POWER MOSFET 4A 650V Applications In Switching Power Supplies And Adaptors 4A, 650V N-CHANNEL TO-220F-3L POWER MOSFET DESCRIPTION The F4N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power |
Shenzhen Hunt Electronics Co., Ltd
Guangdong |
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Brand Name:Infineon Technologies Model Number:IRF7476TRPBF Place of Origin:Multi-origin ...-source voltage of 55V, and maximum gate threshold voltage of 2.5V. 3. It has a low on-resistance of 0.022 ohms and a high power dissipation of 12W. 4. This MOSFET is ideal for applications such as DC/DC converters, audio amplifiers and motor drives. 5 |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:IXYS Model Number:IXFK27N80Q Place of Origin:Original Factory IXFK27N80Q N Channel Mosfet 800V 27A 0.32 Rds Power MOSFETs HiPerFET Description HiPerFETTM Power MOSFETs Q-CLASS Single MOSFET Die N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dV/dt, Low trr Features • IXYS ... |
Shenzhen Retechip Electronics Co., Ltd
Guangdong |
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Brand Name:IOR Model Number:IRFZ44NPBF Place of Origin:CHINA ...POWER MOSFET 55V 49A 94W Through Hole TO-220 Description Advanced HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs... |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Brand Name:STMicroelectronics Model Number:STP100N8F6 Place of Origin:Shenzhen, China ...MOSFET N-channel 80 V, 0.008 Ohm type, 100 A, STripFET F6 Power MOSFET in a TO-220 package General Description : This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Distinctive Characteristics : Part No: STP100N8F6 Description: Trans MOSFET N-CH 80V 100A 3-Pin(3+Tab) TO-220 Tube Product Category Power |
Shenzhen Weitaixu Capacitor Co.,Ltd
Guangdong |
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Brand Name:Hua Xuan Yang Model Number:2N60 Place of Origin:ShenZhen China ...low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient DC to DC converters and bridge circuits. |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:IR Original Model Number:IR21094STRPBF Place of Origin:Original & New IR21094STRPBF high voltage, high speed power MOSFET and IGBT drivers Description The IR2109(4)(S) are high voltage, high speed power MOSFET and IGBT drivers with dependent high and low side referenced output channels. Proprietary HVIC and latch immune CMOS... |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:original Model Number:M68702H Place of Origin:Original Manufacturer ...POWER MOSFET TRANSISTORS M68702H FOR FM MOBILE RADIO Condition: 100% Brand New Product Part Status: Active Package: H2 Lead Free Status / RoHS Status: Compliant Output Power: 60W Voltage: 12.5V High Light: n channel mosfet transistor , n channel transistor M68702H 150-175MHz, 12.5V, 60W, RF Power... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Place of Origin:PHILIPPINE Brand Name:Fuji Electric Model Number:FMH23N50E ...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing ... |
Mega Source Elec.Limited
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Brand Name:JUYI Model Number:JY09M Place of Origin:China ... density and reduces the on-resistance with low gate charge. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. |
Shanghai Juyi Electronic Technology Development Co., Ltd
Shanghai |
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Brand Name:Original Factory Model Number:SCTWA50N120 Place of Origin:CN 1200V MOSFET SCTWA50N120 N-Channel Silicon Carbide Power MOSFET Through Hole HiP247 Product Description Of SCTWA50N120 SCTWA50N120 Silicon carbide Power MOSFET 1200 V, 65 A, 59 mΩ (typ., TJ=150 °C) in an HiP247™ long leads package. Specification Of ... |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Categories:Discrete Semiconductors Country/Region:china POWER MOSFET TRANSISTOR APT94N65B2C3G APT94N65B2C3G Microsemi Corporation (now Microchip) MOSFET N-CH 650V 94A T-MAX Product Technical Specifications Category Integrated Circuits (ICs) APT94N65B2C3G POWER MOSFET TRANSISTOR Mfr MICROSEMI/MICROCHIP Series - Package Tube Product Status Obsolete Mounting Type Through Hole Operating Temperature - Supplier Device Package APT94N65B2C3G POWER MOSFET TRANSISTOR Package / Case MOSFET... |
Angel Technology Electronics Co
Hongkong |
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Brand Name:Original Factory Model Number:IPT020N10N5ATMA1 Place of Origin:China Power MOSFET Original Integrated Circuit IPT020N10N5ATMA1 Product Description Less paralleling required Increased power density Reduced switching and conduction losses Product Specifications Part Number: IPT020N10N5ATMA1 FET Type: N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Power Dissipation (Max): 273W (Tc) Series: OptiMOS™5 Technology: MOSFET... |
Shenzhen Tengshengda ELECTRIC CO., LTD.
Guangdong |
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Brand Name:ON Model Number:NTTFS3A08PZTAG Place of Origin:America ...MOSFETs Single P-CH 20V 9A 8WDFN P-Channel Products Description: 1. -20V,-15A,6.7 Mω, P-channel power MOSFET 2. P-channel 20V 9A (Ta) 840mW (Ta) Surface Mount 8-wdfn (3.3x3.3) 3. Trans MOSFET P-CH 20V 22A 8-Pin WDFN EP T/R 4. components -20V,-15A,6.7m ,P channel power... |
Shenzhen Res Electronics Limited
Guangdong |
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Brand Name:Infineon Model Number:IRF7351TRPBF Place of Origin:China ...Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating andnbsp; Applications Synchronous Rectifier MOSFET for Isolated DC-DC Converters Low Power... |
TOP Electronic Industry Co., Ltd.
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