blf7g22l 200 118 mosfet transistor

Categories:Transistors - FETs, MOSFETs - RF

Country/Region:china

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF7G22L-200,118 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Categories:RF JFET Transistors

Country/Region:china

... JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ...

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 1.62 A 2.11GHz ~ 2.17GHz 18.5dB 55W SOT502A

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 1.62 A 2.11GHz ~ 2.17GHz 18.5dB 55W SOT502A

Place of Origin:Original

BLF7G22L-160,118 Specifications Part Status Obsolete Transistor Type LDMOS Frequency 2.11GHz ~ 2.17GHz Gain 18dB Voltage - Test 28V Current Rating 36A Noise Figure - Current - Test 1.3A Power - Output 43W Voltage - Rated 65V Package / Case SOT-502A Supplier Device Package LDMOST Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLF7G22L-160,118...

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 1.9 A 2.11GHz ~ 2.17GHz 18.5dB 70W SOT539A

Brand Name:ONSEMI

Model Number:BSS138LT1G

Place of Origin:Original

Power MOSFET 200 mA, 50 V N−Channel SOT−23 Typical applications are DC−DC converters, power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features • Pb−Free Packages are ...

Brand Name:IR

Model Number:IRFB4227PBF

Place of Origin:IR

...MOSFET Transistor N Channel High Current Triode IRFB4227PBF Direct-plug to-220 N-channel 200V/65A MOSFET high current triode Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 200...

Model Number:IRF9540

Place of Origin:original factory

..., tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation. All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and

Brand Name:Original Factory

Model Number:SCTW70N120G2V

Place of Origin:CN

...MOSFETs Transistors SCTW70N120G2V Integrated Circuit Chip Product Description Of SCTW70N120G2V SCTW70N120G2V's variation of switching loss is almost independent of junction temperature. Specification Of SCTW70N120G2V Part Number SCTW70N120G2V Minimum Operating Temperature: - 55 C Maximum Operating Temperature: + 200...

Brand Name:Nexperia

Model Number:BUK761R7-40E,118

...118 TYPE DESCRIPTION Category Discrete Semiconductor Products Transistors - FETs, MOSFETs - Single Mfr Nexperia USA Inc. Series Automotive, AEC-Q101, TrenchMOS™ Package Tape & Reel (TR) Cut Tape (CT) Digi-Reel® Product Status Obsolete FET Type N-Channel Technology MOSFET...

Model Number:FQA24N60

Place of Origin:United States

Brand Name:Original

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Brand Name:Infineon Technologies

Model Number:BSC060N10NS3G

Place of Origin:original

BSC060N10NS3G MOSFET Power Electronics High-Performance Low-Power Consumption Transistor for Industrial Applications IRF6217TRPBF - N-Channel MOSFET Transistor Parameters: VDS (Max) = 100V VGS (Max) = ±20V ID (Max) = 7.8A RDS (on) (Max) = 0.068Ω Package ...

Place of Origin:MALAYSIA

Brand Name:FSL

Model Number:MRF6VP3450HR5

MRF6VP3450HR5 is a RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFET. Part NO: MRF6VP3450HR5 Brand: FSL Date Code: 322+ Quality Warranty: 3 Months Mounting Type: Screws Overview Mega Source Electronic Co., LTD specializes in High ...

Brand Name:Hua Xuan Yang

Model Number:AP30N10D

Place of Origin:ShenZhen China

...Transistor , 30A 100V TO-252 Field Effect Transistor High Current Transistor types MOSFETs can be of different types, including: Depletion Mode: Normally ON. Applying the VGS would turn it OFF. Enhancement Mode: Normally OFF. Applying the VGS would turn it ON. N-channel MOSFETs: positive voltages and currents. P-channel MOSFETs: negative voltages and currents. Low voltage MOSFETs: BVDSS from 0 V to 200...

Place of Origin:China

Brand Name:ONSEMI

Model Number:FDMS86500DC

High Power MOSFET FDMS86500DC N-Channel Dual CoolTM 56 Power Trench® MOSFET 60V, 108A, 2.3mΩ [Who we are?] Sunbeam Electronics (Hong Kong) Co. Ltd is focus on semi-conductors sourcing and electronic components sale and service for clients over 10 years, ...

Model Number:IRFP250NPBF

Place of Origin:China

Brand Name:original

Transistor MOSFET N channel 30A 200V 75MOHM 10V MOS tube IRFP250NPBF Products Description: 1.IRFP250NPBF transistor, MOSFET, N channel, 30 A, 200 V, 75 MoHM, 10 V, 4 V 2.The to-247 package is preferred for Commercial-industrial applications wherehigher ...

Brand Name:Infineon Technologies

Model Number:IRF9530PBF

Place of Origin:Original

...Transistor IRF9530PBF -100V -14A 200 MOhms 1 P-Channel 38.7 NC Applications Increased ruggedness Wide availability from distribution partners Industry standard qualification High performance in low frequency applications Standard pin-out allows for drop-in replacement High current capability Description -100V Single P-Channel Power MOSFET in a TO-220 package The IR MOSFET family of power MOSFETs...

Place of Origin:US

Brand Name:Original

Model Number:MBR20100CTL

Product Detail Packaging Tube Part Status Active Diode Configuration 1 Pair Common Cathode Diode Type Schottky Voltage - DC Reverse (Vr) (Max) 100V Voltage - Forward (Vf) (Max) @ If 900mV @ 10A Speed Fast Recovery =< 500ns, > 200mA (Io) Current - Reverse ...

Brand Name:GINRI

Model Number:JR-XJ

Place of Origin:China

... automation equipment must produce more than 200 products in one minute. This speed must be achieved, or it cannot meet the requirements. Transistor output, this is the saying in circuit control. In many automation devices, the circuit ultimately needs to