blf8g20ls 200v mosfet transistor

Categories:Transistors - FETs, MOSFETs - RF

Country/Region:china

BLF8G20LS-200V,118 Overview\\nBLF8G20LS-200V,118 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BLF8G20LS-200V...

Place of Origin:Original

BLF8G20LS-200V,112 Specifications Part Status Active Transistor Type LDMOS Frequency 1.81GHz ~ 1.88GHz Gain 17.5dB Voltage - Test 28V Current Rating - Noise Figure - Current - Test 1.6A Power - Output 55W Voltage - Rated 65V Package / Case SOT-1120B Supplier Device Package CDFM6 Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLF8G20LS-200V...

Categories:RF JFET Transistors

Country/Region:china

... JFET Transistors.what we offer have competitive price in the global market,which are in original and new parts.If you would like to know more about the products or apply a lower price, please contact us through the “online ...

Brand Name:Original brand

Model Number:IRFB38N20DPBF

Place of Origin:Original Manufacturer

200V 43A 3.8W 300W MOSFET POWER TRANSISTOR IRFB38N20DPBF N- CHANNEL SMPS MOSFET FET Type: N-Channel Drain To Source Voltage: 200V Current - Continuous Drain: 43A Drive Voltage: 10V High Light: high power mosfet transistors , n channel mosfet transistor IRFB38N20DPBF N-Channel 200V 43A 3.8W 300W Through Hole TO-220AB SMPS MOSFET...

Brand Name:IOR

Model Number:IRF640NSTRLPBF

Place of Origin:CN

...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Brand Name:VISHAY

Model Number:IRFP240PBF

Place of Origin:USA

IRFP240PBF 200V 20A 0.18Ohm Rated Power MOSFET Transistor TO - 247 Dynamic DV/DT Rating Repetitive Avalanche HEXFETO Power MOSFET ●Dynamic dv/dt Rating ●Repetitive Avalanche Rated ●Isolated Central Mounting Hole ●Fast Switching ●Ease of ...

Brand Name:IR

Model Number:IRFB4227PBF

Place of Origin:IR

...200V 65A MOSFET Transistor N Channel High Current Triode IRFB4227PBF Direct-plug to-220 N-channel 200V/65A MOSFET high current triode Manufacturer: Infineon Product Category: MOSFET RoHS: Details Technology: Si Mounting Style: Through Hole Package / Case: TO-220-3 Transistor...

Brand Name:Anterwell

Model Number:FQPF10N20C

Place of Origin:original factory

FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially ...

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 1.6 A 1.81GHz ~ 1.88GHz 17.5dB 55W LDMOST

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 28 V 1.6 A 1.81GHz ~ 1.88GHz 17.5dB 55W LDMOST

Place of Origin:US

Brand Name:Original

Model Number:IRFP250NPBF

Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 200V Current - Continuous Drain (Id) @ 25°C 30A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (...

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 28 V 1.6 A 1.81GHz ~ 1.88GHz 17.5dB 55W LDMOST

Brand Name:Infineon

Model Number:IRF640NPBF

Place of Origin:Original Factory

...200V 18A Switching MOSFET Power Transistor Description Fifth Generation HEXFET® Power MOSFET s from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs...

Place of Origin:ShenZhen China

Brand Name:Hua Xuan Yang

Model Number:HXY2312

... Mode MOSFET Product Summary The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate ...

Brand Name:Semelab

Model Number:D1028UK

Place of Origin:UK

D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ...

Model Number:FDMS6681Z

Place of Origin:America

Brand Name:ON

FDMS6681Z MOSFET P-CH 30V 21.1A/49A 8PQFN Original Mosfet Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z is A-30V P-channel PowerTrench® MOSFEts hav...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

...MOSFET is an Ultra-hv MOSFET, a kind of High Voltage Mosfet Transistor, that offers outstanding performance in terms of heat dissipation and low on-resistance. It is equipped with advanced features such as new Lateral Variable Doping Technology, Special Power MOS Structure and excellent characteristics in high-temperature, allowing for superior performance over the conventional High Voltage MOSFET...

Brand Name:onsemi

Model Number:NTR4003NT1G

Place of Origin:original

NTR4003NT1G MOSFET Power Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta...

Model Number:IRF3710PBF

Place of Origin:United States

Brand Name:Original

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