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| Total 137 products from bls6g2735l 30 mosfet transistor Manufactures & Suppliers |
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Categories:Transistors - FETs, MOSFETs - RF Country/Region:china BLS6G2735L-30,112 Overview\\\\nBLS6G2735L-30,112 is a model belonging to the Transistors - FETs, MOSFETs - RF subcategory under Discrete Semiconductor. For specific product performance parameters, please refer to the data sheet, such as PDF files Docx documents, etc. We have BLS6G2735L-30... |
Rozee Electronics Co., Ltd
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Place of Origin:Original BLS6G2735L-30,112 Specifications Part Status Active Transistor Type LDMOS Frequency 3.1GHz ~ 3.5GHz Gain 13dB Voltage - Test 32V Current Rating - Noise Figure - Current - Test 50mA Power - Output 30W Voltage - Rated 60V Package / Case SOT-1135A Supplier Device Package CDFM2 Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. BLS6G2735L-30... |
KZ TECHNOLOGY (HONGKONG) LIMITED
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Brand Name:REASUNOS Place of Origin:Guangdong, CN ...MOSFET is a cutting-edge semiconductor device designed to meet the demanding requirements of modern electronic applications. As a MOSFET (Metal-Oxide-Semiconductor Field-Effect Transistor), this product boasts exceptional performance characteristics that make it an ideal choice for high power and high efficiency systems. With its low on resistance and robust power handling capabilities, the High Power MOSFET |
Reasunos Semiconductor Technology Co., Ltd.
Guangdong |
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Categories:FETs MOSFETs Country/Region:china RF Mosfet 32 V 50 mA 3.1GHz ~ 3.5GHz 13dB 30W CDFM2 |
Shenzhen Wonder-Chip Electronics Company Limited
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Brand Name:Anterwell Model Number:FDS9435A Place of Origin:original factory ... range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load switch · Battery protection Features · –5.3 A, –30 V RDS(ON) = 50 mW @ VGS = –10 V |
Anterwell Technology Ltd.
Guangdong |
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Categories:RF FETs, MOSFETs Country/Region:china RF Mosfet 32 V 50 mA 3.1GHz ~ 3.5GHz 13dB 30W CDFM2 |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Categories:RF FETs, MOSFETs Country/Region:china RF Mosfet 32 V 50 mA 3.1GHz ~ 3.5GHz 13dB 30W CDFM2 |
Beijing Silk Road Enterprise Management Services Co.,LTD
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Brand Name:Semelab Model Number:D1028UK Place of Origin:UK D1028UK RF MOSFET Transistors RF MOSFET N-CH 70V 30A 5-Pin Case DR anufacturer: TT Electronics Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 A Vds - Drain-Source Breakdown Voltage: ... |
Wisdtech Technology Co.,Limited
Guangdong |
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Brand Name:original Model Number:FCB36N60NTM Place of Origin:original ... V Id - Continuous Drain Current: 36 A Rds On - Drain-Source Resistance: 90 mOhms Vgs - Gate-Source Voltage: - 30 V, + 30 V Vgs th - Gate-Source Threshold Voltage: |
Walton Electronics Co., Ltd.
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Brand Name:onsemi Model Number:NTR4003NT1G Place of Origin:original NTR4003NT1G MOSFET Power Electronics N-Channel MOSFET Transistor TO-236-3 Solution Switching Amplification Applications FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 500mA (Ta... |
Shenzhen Sai Collie Technology Co., Ltd.
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Brand Name:NXP Semiconductors Model Number:AFT05MS003NT1 ...MOSFET Transistors N Channel 500mV 30V RF Power AFT05MS003NT1 ,NXP , RF MOSFET Transistors,N-Channel,- 500 mV, 30 V,RF Power MOSFET,1.8 MHz to 941 MHz, 20.8 dB,SOT-89-3 Product Attribute Attribute Value Manufacturer: NXP Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 2.6 A Vds - Drain-Source Breakdown Voltage: - 500 mV, 30... |
QIN XIN (HONG KONG) ELECTRONIC TECHNOLOGY CO.,LIMITED
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Brand Name:Hua Xuan Yang Model Number:1503C1 Place of Origin:ShenZhen China ..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the |
Shenzhen Hua Xuan Yang Electronics Co.,Ltd
Guangdong |
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Brand Name:Original brand Model Number:IRF640NSTRLPBF Place of Origin:Original Manufacturer ...MOSFET TRANSISTOR 200V SURFACE MOUNT D2PAK Goods Condition: Brand New Part Status: Active Lead Free / Rohs: Complaint Function: Mosfet Mounting Type: Surface Mount Package: D2PAK High Light: high power mosfet transistors , n channel mosfet transistor IRF640NSTRLPBF N-Channel Mosfet Transistor... |
Shenzhen Huahao Gaosheng Technology Co., Ltd
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Model Number:FDMS6681Z Place of Origin:America Brand Name:ON FDMS6681Z MOSFET P-CH 30V 21.1A/49A 8PQFN Original Mosfet Transistor Products Description: 1. FAIRCHILD SEMICONDUCTOR FDMS6681Z transistor, MOSFET, P-channel, -49A, -30V, 0.0027Ohm, -10V, -1.7V 2. The FDMS6681Z is A-30V P-channel PowerTrench® MOSFEts hav... |
Shenzhen Res Electronics Limited
Guangdong |
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Brand Name:Original Factory Model Number:NTMFS4C028NT1G Place of Origin:CN .... Surface−mounted on FR4 board using 1 sq−in pad, 1 oz Cu. Specification Of NTMFS4C028NT1G FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 30 V Current - Continuous Drain (Id) @ 25°C 16.4A (Ta), 52A (Tc) |
ShenZhen Mingjiada Electronics Co.,Ltd.
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Brand Name:Infineon Model Number:IRF7404TRPBF Place of Origin:Original Factory ... possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of |
Shenzhen ATFU Electronics Technology ltd
Guangdong |
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Brand Name:IOR Model Number:IRF640NSTRLPBF Place of Origin:CN ...Rated Ease of Paralleling Simple Drive Requirements Description Fifth Generation HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with |
Shenzhen Koben Electronics Co., Ltd.
Guangdong |
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Model Number:FDS9435A Place of Origin:original factory ... range of gave drive voltage ratings (4.5V – 25V). Applications · Power management · Load switch · Battery protection Features · –5.3 A, –30 V RDS(ON) = 50 mW @ VGS = –10 V |
ChongMing Group (HK) Int'l Co., Ltd
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Place of Origin:US Brand Name:Original Model Number:IRFZ44N Product Detail Packaging Tube Part Status Active FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 55V Current - Continuous Drain (Id) @ 25°C 49A (Tc) Drive Voltage (Max Rds On, Min Rds On) 10V Rds On (Max) @ Id, Vgs 17.5 ... |
Shenzhen Quanyuantong Electronics Co., Ltd.
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Brand Name:VISHAY Model Number:S525T-GS08 Place of Origin:USA ... SOT-223 S525T Product Paramenters Manufacturer: Vishay Product Category: RF MOSFET Transistors Transistor Polarity: N-Channel Technology: Si Id - Continuous Drain Current: 30 mA Vds - Drain-Source Breakdown Voltage: 20 V Minimum Operating Temperature: - ... |
ShenZhen QingFengYuan Technology Co.,Ltd.
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