cghv1j025d gp4 rf transistor

Categories:Transistors - FETs, MOSFETs - RF

Country/Region:china

..., please refer to the data sheet, such as PDF files Docx documents, etc. We have CGHV1J025D-GP4 high-definition pictures and data sheets for reference. We will continue to produce various video files and 3D models for users to understand our ...

Place of Origin:Original

CGHV1J025D Specifications Part Status Active Transistor Type HEMT Frequency 18GHz Gain 17dB Voltage - Test 40V Current Rating - Noise Figure - Current - Test 120mA Power - Output 25W Voltage - Rated 100V Package / Case Die Supplier Device Package Die Shipment UPS/EMS/DHL/FedEx Express. Condtion New original factory. CGHV1J025D...

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 40 V 120 mA 18GHz 17dB 25W Die

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 40 V 120 mA 18GHz 17dB 25W Die

Categories:RF FETs, MOSFETs

Country/Region:china

RF Mosfet 40 V 120 mA 18GHz 17dB 25W Die

Categories:FETs MOSFETs

Country/Region:china

RF Mosfet 40 V 120 mA 18GHz 17dB 25W Die

Brand Name:Diodes Incorporated

Model Number:BS816A-1

Place of Origin:USA

...TRANSISTOR RF Transistors Manufacturer: DIODES Product Category: P-CHANNEL ENHANCEMENT RoHS: Details Mounting Style: - Package / Case: 16NSOP Packaging: Standard Unit Weight: - oz This transistor is suitable for RF power amplifiers in various applications such as wireless communication, broadcasting, and industrial RF equipment. ● P-channel enhancement mode ● DMOS transistor...

Brand Name:Analog Devices Inc.

Model Number:AD9361BBCZ

Place of Origin:Multi-origin

...RF Power Transistor - High Power High Reliability The AD9361BBCZ is a high-power, high-efficiency N-channel RF power transistor designed for use in the 900 MHz ISM band. The device features a wide gate voltage range and excellent thermal stability. It is ideal for applications such as RF...

Categories:Electronic Semiconductors

Country/Region:china

..., high gain, and high-speed performance in compact packages. Key Features: Type: NPN RF Transistor Transition Frequency (ft): 25 GHz Noise Figure (NF): 0.75 dB at 2 GHz Gain (Gmax): 21 dB at 1.8 ...

Brand Name:Fuji Electric

Model Number:FLM0910-25F

Place of Origin:JP

FLM0910-25F RF Power Transistor X-Band Internally Matched FET DESCRIPTION The FLM0910-25F is a power GaAs FET that is internally matchedfor standard communication bands to ...

Brand Name:VBE

Model Number:VBE36015E2

Place of Origin:CHINA

Model Number:BFQ67W

Place of Origin:CN

... to RoHS 2002/95/EC and WEEE 2002/96/EC Applications Low noise small signal amplifiers up to 2 GHz. This transistor has superior noise figure and associated gain performance at UHF, VHF and microwave frequencies.

Place of Origin:CN

Brand Name:Original Factory

Model Number:QPD0007

Wireless Communication Module QPD0007 Single-Path 5GHz 20W 48V GaN RF Transistor [MJD Advantage] + 15 years experience for electronic components + Secure Ordering + Excellent Feedback + Delivery Date Guaranteed + 100% ...

Brand Name:Anterwell

Model Number:BFR91A

Place of Origin:original factory

Stock Offer (Hot Sell) Part no. Quantity Brand D/C Package EPM3128ATC100-10N 3000 ALTERA 16+ TQFP-100 HFA08TB60PBF 3000 VISHAY 16+ TO-220 HT7533-1 3000 HOLTEK 13+ SOT89 HT9170B 3000 HOLTEK 15+ DIP18 IMP811T 3000 IMP 16+ SOT143 IRF840PBF 3000 VISHAY 16+ ...

Brand Name:TX TELSIG

Model Number:YP242434

Place of Origin:China

TXtelsig YP242434 Wifi RF Amplifier 2.4GHz 802.11b/g/n WLAN Power Amplifier The YP242434 is a high-power, high- linearity power amplifier based on the highly-reliable InGaP/GaAs HBT technology. It can be easily configured for high-power, high- linearity ...

Model Number:SD1480

Place of Origin:Malaysia

Brand Name:KAIGENG

SD1480 N/A Electronic Components IC MCU Microcontroller Integrated Circuits SD1480 #detail_decorate_root .magic-0{border-bottom-style:solid;border-bottom-color:#53647a;font-family:Roboto;font-size:24px;color:#53647a;font-style:normal;border-bottom-width:...

Brand Name:original

Model Number:FCF06A40

Place of Origin:original

Product Category: Rectifiers Mounting Style: Through Hole Package / Case: TO-220-3 Vr - Reverse Voltage: 400 V If - Forward Current: 6 A Type: Fast Recovery Rectifiers Configuration: Single Max Surge Current: 60 A Ir - Reverse Current: 20 uA Recovery Time...

Brand Name:MITSUBISHI

Model Number:RA20H8087M

Place of Origin:JAPAN

Brand Name:NXP

Model Number:BFS505

Place of Origin:CHINA

...Transistors RF Transistor NPN 15V 18mA 9GHz 150mW Surface Mount NPN 9 GHz wideband transistor FEATURES • Low current consumption • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability • SOT323 envelope. DESCRIPTION NPN transistor in a plastic SOT323 envelope. It is intended for low power amplifiers, oscillators and mixers particularly in RF...