converter low vgs threshold mosfet

Brand Name:Infineon Technologies

Model Number:IRF740PBF

Place of Origin:original

...Low On-Resistance MOSFET Ideal for Power Electronics Applications Features: • Low On-Resistance • Low Gate Threshold Voltage • High Forward Transfer Admittance • Low Input Capacitance • Low Output Capacitance • High Speed Switching • Avalanche Energy Rated • 150°C Operating Junction Temperature Specifications: • Drain-Source Voltage (VDS): 30V • Continuous Drain Current (ID): 5A • Gate-Source Voltage (VGS...

Brand Name:REASUNOS

Place of Origin:Guangdong, CN

Low Threshold Voltage MOSFET with High EAS Capability for DC/DC Converter in Trench/SGT Structure Process *, *::before, *::after {box-sizing: border-box; } * {margin: 0; } html, body {height: 100%; } body {line-...

Brand Name:ONSEMI

Model Number:BSS138LT1G

Place of Origin:Original

... and cordless telephones. Features • Pb−Free Packages are Available • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space NOTES: 1. DIMENSIONING AND

Brand Name:Hua Xuan Yang

Model Number:AOD508/AOI508

Place of Origin:ShenZhen China

...MOSFET technology • Very Low RDS(on) at 10VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing • Isolated DC/DC Converters in Telecom and Industrial Parameters Part Number Status Package Polarity VDS (V) VGS (±V) ID (A) PD (W) RDS(ON) (mΩ max)† at VGS= VGS...

Brand Name:FUJI

Model Number:FMH23N50E

Place of Origin:Original

...Mosfet 23a 500v Dc-Dc Converters Power Supply Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Features Maintains both low power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold...

Place of Origin:PHILIPPINE

Brand Name:Fuji Electric

Model Number:FMH23N50E

...power loss and low noise Lower RDS(on) characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching Narrow band of the gate threshold voltage (3.0±0.5V) High avalanche durability Specifications: part no

Brand Name:ONSEMI

Model Number:BSS138LT1G

Place of Origin:Original

... and cordless telephones. Features • Pb−Free Packages are Available • Low Threshold Voltage (VGS(th): 0.5 V−1.5 V) Makes it Ideal for Low Voltage Applications • Miniature SOT−23 Surface Mount Package Saves Board Space NOTES: 1. DIMENSIONING AND

Brand Name:Original Factory

Model Number:NXV65HR82DZ2

Place of Origin:CN

...Phase-shifted DC-DC converter. Specification Of NXV65HR82DZ2 Part Number NXV65HR82DZ2 Rds On - Drain-Source Resistance: 82 mOhms Vgs - Gate-Source Voltage: - 20 V, + 20 V Vgs th - Gate-Source Threshold Voltage: 5 V Qg - Gate Charge: 79.7 nC Features Of

Brand Name:onsemi

Model Number:FDC608PZ

Place of Origin:USA

... - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 5.8 A Rds On - Drain-Source Resistance: 30 mOhms Vgs - Gate-Source Voltage: - 12 V, + 12 V Vgs th - Gate-Source Threshold Voltage: 1.5 V

Brand Name:original

Model Number:LBSS138LT1G

..., printers,PCMCIA cards, cellular and cordless telephones 2. Low Threshold Voltage (VGS(th): 0.5V...1.5V) makes it ideal for lowvoltage applications 3. Miniature SOT–23 Surface Mount Package saves board ...

Brand Name:Infineon

Model Number:IRLR7843TRPBF

Place of Origin:Original Factory

...-to-Source Voltage 30 V VGS Gate-to-Source Voltage ± 20 ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 161f A ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 113f IDM Pulsed Drain Current c 620 PD @TC = 25°C

Brand Name:ONSEMI

Model Number:BSS138LT1G

Place of Origin:China

...MOSFET N-CH 50V 0.2A 3-Pin SOT-23 T/R The ON Semiconductor MOSFET is an N channel MOSFET transistor which operates in enhancement mode. Its maximum power dissipation is 225 mW. The maximum Drain Source Voltage of the product is 50 V and Gate Source Voltage is ±20 V. This MOSFET has an operating temperature range of -55°C to 150°C. Features and Benefits: • Low Threshold Voltage (VGS(th): 0.85 V-1.5 V) Makes it Ideal for Low

Brand Name:Infineon

Model Number:IRF7351TRPBF

Place of Origin:China

...Low 0.0015andOmega; Power MOSFET in Dual PQFN with Avalanche Rating AEC-Q101 175anddeg;C -40V/-30V Logic Level and Halogen-Free for High-Efficiency Power Conversion andnbsp; Features Ultra-Low Gate Impedance Fully Characterized Avalanche Voltage and Current 20V VGS Max. Gate Rating andnbsp; Applications Synchronous Rectifier MOSFET for Isolated DC-DC Converters Low...

Place of Origin:US

Brand Name:Original

Model Number:TPCA8016-H

Product Description Packaging Digi-Reel Part Status Obsolete FET Type N-Channel Technology MOSFET (Metal Oxide) Drain to Source Voltage (Vdss) 60V Current - Continuous Drain (Id) @ 25°C 25A (Ta) Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V Rds On (Max...

Place of Origin:ShenZhen China

Brand Name:OTOMO

Model Number:8H02ETS

...MOSFET DESCRIPTION The 8H02ETSuses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. GENERAL FEATURES VDS = 20V,ID = 7A 8H02TS RDS(ON) < 28mΩ @ VGS=2.5V RDS(ON) < 26mΩ @ VGS=3.1V RDS(ON) < 22mΩ @ VGS=4V RDS(ON) < 20mΩ @ VGS...

Brand Name:Huixin

Model Number:BC2301

Place of Origin:China

...=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage VGS ±8 V Continuous Drain Current ID -2.3 A Pulsed Drain Current IDM -10 A Continuous Source-Drain Diode Current IS

Brand Name:ROHM

Model Number:EM6K1T2R

Place of Origin:Japan

...MOSFET 2N-CH 30V .1A SOT-563-6 Manufacturer: ROHM Semiconductor Product Category: MOSFET Technology: Si Installation style: SMD/SMT Package / Box: SOT-563-6 Transistor polarity: N-Channel Number of channels: 2 Channel Vds-drain-source breakdown voltage: 30 V Id-continuous drain current: 100 mA Rds On-drain-source on-resistance: 7 Ohms Vgs - gate-source voltage: - 20 V, + 20 V Vgs th-gate-source threshold...

Brand Name:INFINEON

Model Number:IRLML6401TRPBF

... - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 4.3 A Rds On - Drain-Source Resistance: 50 mOhms Vgs - Gate-Source Voltage: - 8 V, + 8 V Vgs th - Gate-Source Threshold Voltage: 4 V

Brand Name:onsemi

Model Number:NTE4153NT1G

...MOSFETs RoHS: Details Technology: Si Mounting Style: SMD/SMT Package / Case: SC-89-3 Transistor Polarity: N-Channel Number of Channels: 1 Channel Vds - Drain-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 915 mA Rds On - Drain-Source Resistance: 230 mOhms Vgs - Gate-Source Voltage: - 6 V, + 6 V Vgs th - Gate-Source Threshold...

Brand Name:JUYI

Model Number:JY13M

Place of Origin:China

.... The complementary MOSFETs may be used in H-bridge, Inverters and other applications. FEATURES Device VBR(DSS) RDS(ON) MAX TJ=25ºC Package N-Channel 40V <30mΩ@VGS=10V,ID=12A TO252-4L <40mΩ@VGS=4.5V,ID=8A P-Channel -40V <45mΩ@VGS=-10V,ID=