cs7n60a2 high breakdown voltage mosfet

Brand Name:Lingxun

Model Number:CS7N60A2

Place of Origin:China

7A600V High Breakdown Voltage Mosfet CS7N60A2 To-220F With Low Ciss Part Number Package Channel ID (A) VDSS (V) VGSS (V) VGS(th)(V) RDS(ON) 10V(mΩ) Qg (nC) Ciss (pF) Min. Min. Min. Max. Typ MAX Typ Typ CS7N60A2 TO-220F N 7 600 ±30 2 4 980 1300 24 1110...

Brand Name:Anterwell

Model Number:EE2-5NU-L

Place of Origin:original factory

...High breakdown voltage, Surface mounting type DESCRIPTION The EE2 series surface-mounting type sustaining high-performance of NEC EC2 series. FEATURES Compact and light weight 2 form c contact arrangement Low power consumption Reduced mounting space : 15 mm × 9.5 mm High-breakdown voltage...

Model Number:EE2-5NU-L

Place of Origin:original factory

...High breakdown voltage, Surface mounting type DESCRIPTION The EE2 series surface-mounting type sustaining high-performance of NEC EC2 series. FEATURES Compact and light weight 2 form c contact arrangement Low power consumption Reduced mounting space : 15 mm × 9.5 mm High-breakdown voltage...

Brand Name:Rvyuan

Model Number:Copper litz wire

Place of Origin:China

...High Breakdown Voltage Taped Litz Wire The advantage of PI film is high stability. In high temperature and chemically corrosive environments, the signal transmission is reliable and not easily affected by external interference. In addition, PI film makes the circuit have better flexibility. Even if bent or rotated, it will not be damaged or affected. In terms of manufacturing process, PI film is highly

Brand Name:Race

Model Number:Ceramic Heat Sink/Ceramic Micro Porous Heat Sink

Place of Origin:China

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Place of Origin:United States

Brand Name:JTN1aS-PA-F-DC12V-Pana-sonic-Electromagnetic

Model Number:JTN1aS-PA-F-DC12V-Pana-sonic-Electromagnetic

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Brand Name:REASUNOS

Place of Origin:Guangdong, CN

.... This type of MOSFET is a N type, which makes it suitable for a range of applications that require high voltage and/or ultra-high voltage power supply. High Voltage MOSFETs are designed for superior performance, with advanced thermal management and

Model Number:IRFR9214PBF

...MOSFET P-Chan Drain-Source Breakdown Voltage 250 V Descriptions of Aviation Parts: Third generation power MOSFETs from Vishay utilize advanced processing techniques to achieve low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that power MOSFETs...

Brand Name:JUYI

Place of Origin:China

High Speed Power MOSFET and IGBT driver 3-Phase High Voltage Gate Driver DESCRIPTION The JY213H is a high speed power MOSFET and IGBT driver with three independent high and low side referenced output channels for 3-phase gate driver. Built-in deadtime protection and Shoot-through protection that prevent half-bridge breakdown. The UVLO circuits prevent malfunction when VCC and VBS are lower than the specified threshold voltage. 600V high-voltage

Brand Name:Huixin

Model Number:H10N65

Place of Origin:China

N Channel High Voltage Mosfet 650V 10A High Accuracy RoHS Compliant TO-220F Applications Adapter & Charger SMPS Standby Power AC-DC Switching Power Supply ...

Place of Origin:China

Brand Name:Wuxi Special Ceramic

... ceramic material with superior insulation resistance, flexural strength, thermal expansion, breakdown voltage and dielectric strength. With an insulation resistance of 1012 Ω·cm, a flexural strength of 400 MPa, a thermal expansion of 7.2 X 10-6/K, a

Brand Name:Hua Xuan Yang

Model Number:AP7H03DF

Place of Origin:ShenZhen China

... charge for most of the small power switching and load switch applications. The meet the RoHS and Product requirement with full function reliability approved. High Voltage Mosfet Transistor Features VDS =

Brand Name:OTOMO

Model Number:1503C1

Place of Origin:ShenZhen China

..., as we can see in the following figure. Thus the device is also called as the V-MOSFET or V-FET. The V- the shape of power MOSFET is cut to penetrate from the device surface is almost to the N+ substrate to the N+, P, and N – layers. The N+ layer is the

Brand Name:DAXIAN

Model Number:DX8499

Place of Origin:China

... temperature, the power frequency voltage (48 ~ 62Hz) of high voltage is raised at a specific speed between the insulation layer and the conductor at a specific speed until breakdown, so as to measure the breakdown voltage of the tested object. It is

Brand Name:onsemi

Model Number:FDT86113LZ

Place of Origin:Multi-origin

.... It has a low on-resistance and high blocking voltage that make it suitable for a wide range of applications, including automotive, industrial, consumer, and communications. Features: • Low on-resistance: RDS(on) = 0.0065 Ω • High blocking voltage:

Brand Name:FQ

Model Number:fq-005

Place of Origin:China

... Thermal Management System. It is a high-performance material that is specifically designed for use in thermal insulation systems. The gel has a breakdown voltage of >4.5KV/mm, which makes it highly resistant to electrical breakdown and ensures a safe and

Brand Name:Shandong Shengtai Instrument Co., Ltd.

Model Number:SH125A

Place of Origin:CHINA

...voltage breakdown tester) SH125A oil withstand voltage tester is one of the routine tests for oil quality and electrical performance of oil immersed high-voltage electrical equipment. According to the revised "Electricity Coefficient Oil Quality Test Method" by the Ministry of Electric Power, it complies with GB/T 507-2002 "Determination of Insulation Oil Breakdown Voltage...

Brand Name:GDZX

Model Number:ZXJYD-II

Place of Origin:China

Transformer Oil Testing Equipment Insulating Oil Breakdown Voltage Tester with high precision,safe and reliable ZXJYD-II Insulating Oil Breakdown Voltage Tester. My company all the scientific and technical personnel, according to national standard GB507-86...

Brand Name:onsemi

Model Number:FDA50N50

Place of Origin:Original Factory

FDA50N50 High Voltage Mosfet 48A 500V DMOS AC−DC Power Supply Transistor Description UniFET MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on−state resistance, and...